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分子光学及其应用前景 被引量:3
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作者 印建平 《物理》 CAS 北大核心 2003年第7期449-454,共6页
随着原子光学的快速发展 ,一门新兴的有关研究中性分子与电场、磁场和光场等物质相互作用及其冷却、囚禁、操控与应用的学科———“分子光学”正在逐步形成 .文章首先就分子光学的学术内涵及其研究内容作一简单类比与讨论 ;其次 ,就冷... 随着原子光学的快速发展 ,一门新兴的有关研究中性分子与电场、磁场和光场等物质相互作用及其冷却、囚禁、操控与应用的学科———“分子光学”正在逐步形成 .文章首先就分子光学的学术内涵及其研究内容作一简单类比与讨论 ;其次 ,就冷分子束的产生与超冷分子样品的实验制备、超冷分子物理与光谱学、非线性与量子分子光学的研究及其最新进展进行简要综述 .最后 ,就分子光学的应用前景进行了展望 . 展开更多
关键词 分子光学 分子 超冷分子样品 超冷分子物理 超冷分子光谱学 非线性分子光学 量子分子光学
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Raman Theory for a molecule in a Vibrating Microcavity Oscillating in Fundamental Resonance
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作者 YANGXiao-Xue WUYing 《Communications in Theoretical Physics》 SCIE CAS CSCD 2001年第6期725-728,共4页
We propose a model to describe the energy structure and dynamics of a system of a molecule interacting with infinite photon modes in a vibrating microcavity whose boundary oscillates in the fundamental resonance. By c... We propose a model to describe the energy structure and dynamics of a system of a molecule interacting with infinite photon modes in a vibrating microcavity whose boundary oscillates in the fundamental resonance. By constructing an Lie algebra for the infinite photon modes, we obtain analytical expressions of the energy eigenstates, energy eigenvalues and the system's evolution operator for this Raman model under certain conditions. 展开更多
关键词 Raman theory vibrating microcavity dynamical Casimir effect
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Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering
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作者 ZHAOJie WANGYong-chen +1 位作者 FENGZhe-chuan FergusonI 《Semiconductor Photonics and Technology》 CAS 2004年第2期73-77,85,共6页
InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering.The luminescent characteristics were investigated using photoluminescence and photoreflectance,f... InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering.The luminescent characteristics were investigated using photoluminescence and photoreflectance,from which the band gap blue shift was observed.Si3N4,SiO2 and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group III atoms.All samples were annealed by rapid thermal annealing.The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature.The SiO2 capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si3N4 capping with an InGaAs cladding layer.On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination. 展开更多
关键词 Molecular beam epitaxy Quantum well Optical properties Indium phosphide INGAASP
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Solving Master Equation for Two-Mode Density Matrices by Virtue of ThermalEntangled State Representation
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作者 FANHong-Yi LIChao 《Communications in Theoretical Physics》 SCIE CAS CSCD 2004年第1期21-24,共4页
We extend the approach of solving master equations for density matrices by projecting it onto the thermal entangled state representation(Hong-Yi Fan and Jun-Hua Chen,J.Phys.A35(2002)6873)to two-mode case.In this appro... We extend the approach of solving master equations for density matrices by projecting it onto the thermal entangled state representation(Hong-Yi Fan and Jun-Hua Chen,J.Phys.A35(2002)6873)to two-mode case.In this approach the two-photon master equations can be directly and conveniently converted into c-number partial differential equations.As an example,we solve the typical master equation for two-photon process in some limiting cases. 展开更多
关键词 thermal entangled state master equation
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