非厄米受激拉曼绝热捷径的量子分束

针对存在增益损耗的三能级非厄米量子系统,提出了一种新型的非厄米受激拉曼绝热捷径(NH-STIRSAP)技术。该技术基于传统的受激拉曼绝热通道(STIRAP),通过灵活调控系统的非厄米项,使系统演化中的非绝热耦合得到有效抵消,从而加速绝热演化过程。详细的数值计算和理论分析结果证实,基于所提技术,系统的绝热演化速度快,且制备的量子态具有高保真度。并展示了所提技术在量子分束方面的应用。与传统绝热捷径技术相比,NH-STIRSAP新技术具有更广泛的应用。

Material Growth and Device Fabrication of GaAs Based 1.3μm GaInNAs Quantum Well Laser Diodes

Material growth and device fabrication of the first 1.3μm quantum well （QW） edge emitting laser diodes in China are reported. Through the optimization of the molecular beam epitaxy （MBE） growth conditions and the tuning of the indium and nitrogen composition of the GalnNAs QWs, the emission wavelengths of the QWs can be tuned to 1.3μm. Ridge geometry waveguide laser diodes are fabricated. The lasing wavelength is 1.3μm under continuous current injection at room temperature with threshold current of 1kA/cm^2 for the laser diode structures with the cleaved facet mirrors. The output light power over 30mW is obtained.

InAs Wires on InP (001)

The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

Highly-Strained InGaAs/GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Highly stained InGaAs/GaAs Quantum Wells (QW) are grown by using molecular beam epitaxy.The room-temperature photoluminescence (PL) peak wavelength as long as 1160nm is obtained from QW with the In composition of 38% and the well width of 6 8nm.The full-width at half-maximum of the PL peak is 22meV,indicating a good quality.InGaAs/GaAs QW ridge-waveguide lasers with emission wavelength of 1120nm are demonstrated.For 100-μm-wide ridge-waveguide lasers with a cavity length of 800μm,the kink-free output power up to 200mW is achieved with the slope efficiency of 0 84mW/mA under the continue-wave operation.For 10μm-wide ridge-waveguide lasers,the lowest threshold current density of 450A/cm2 and the characteristic temperature of 90K are obtained.

Room Temperature Operation of Strain-Compensated 5.5μm Quantum Cascade Lasers

Room temperature operation is an important criterion for high performance of quantum cascade lasers. A strain-compensated quantum cascade laser（λ≈5.5μm） with optimized waveguide structure lasing at room temperature is reported. Accurate control of layer thickness and strain-compensated material composition is demonstrated using X-ray diffraction. An output power of at least 45mW per facet is realized for a 20μm-wide and 2mm-long laser at room temperature.

Constrained least squares algorithm for channel vector estimation in 2-D RAKE receiver

Based on the fact that the variation of tile direction of arrival (DOA) isslower than that of the channel fading, the steering vector of the desired signal is estimatedfirstly using a subspace decomposition method and then a constrained condition is configured.Traffic signals are further employed to estimate the channel vector based on the constrained leastsquares criterion. We use the iterative least squares with projection (ILSP) algorithm initializedby the pilot to get the estimation. The accuracy of channel estimation and symbol detection can beprogressively increased through the iteration procedure of the ILSP algorithm. Simulation resultsdemonstrate that the proposed algorithm improves the system performance effectively compared withthe conventional 2-D RAKE receiver.

Surface Morphology and Photoluminescence of 1.3 μm Wavelength In(Ga)As/GaAs Quantum Dots

Self-organized In 0.5 Ga 0.5 As/GaAs quantum island structure emitting at 1.35 μm at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs) 1/(GaAs) 1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In 0.5 Ga 0.5 As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

Optical Gain of V-groove Zn_(1-x)Cd_x Se/ZnSe Quantum Wires

The subband structures, distributions of electron and hole wave functions, state density, optical gain spectra, and transparency carrier density of the V-groove Zn 1-x Cd x Se/ZnSe quantum wires are investigated theoretically using four band effective-mass Hamiltonian, which takes into account the effects of the valence band anisotropy and the band mixing. The biaxial strain effect for quantum wires is included in the calculation. The compressive strain in the Zn 1-x Cd x Se wire region increases the energy separation between the uppermost subbands. The optical gain with xy -polarized light is enhanced, while optical gain with z -polarized light is strongly decreased. The xy -polarized optical gain spectrum has a peak at around 2.541 eV, with the transparency carrier density of 0.75×10 18 cm -3 . The calculated results also show that the strain tends to increase the quantum confinement and enhance the anisotropy of the optical transitions.

A Kind of Three-Mode Entangled States of Continuum Variables Generated by Beam Splitter and Parametric Down-Conversion Amplifier

In 3-mode Fock space we find a new tripartite entangled state |α,γ 】 λ,which make up a new quantum mechanical representation. The state |α,γ 】 λ, can be generated byusing the setup composing of a beam splitter and a parametric down-conversion amplifier. Applicationof the state is briefly discussed.

Best Tracking Performance under Plant Uncertainty and Control Energy Constraint

This paper has investigated best tracking performance for linear feedback control systems in the case that plant uncertainty and control effort need to be considered simultaneously. Firstly, an average integral square criterion of the tracking error and the plant input energy over a class of additive model errors is defined. Then, utilizing spectral factorization to minimize the performance index, we obtain an optimal controller design method, and furthermore study optimal tracking performance under plant uncertainty and control energy constraint. The results can be used to evaluate optimal average tracking performance and control energy in designing practical control systems.

Layer Combination Effect on Band Gap Shift of InGaAsP/InP MQWs by Impurity-free Vacancy Disordering

InGaAsP/InP multiple quantum wells with quantum well intermixing have been prepared by impurity-free vacancy disordering.The luminescent characteristics were investigated using photoluminescence and photoreflectance,from which the band gap blue shift was observed.Si3N4,SiO2 and SOG were used for the dielectric layer to enhance intermixing from the outdiffusion of group III atoms.All samples were annealed by rapid thermal annealing.The results indicate that the band gap blue shift varies with the dielectric layers and the annealing temperature.The SiO2 capping with an InGaAs cladding layer was successfully used to induce larger band tuning effect in the InGaAsP/InP MQWs than the Si3N4 capping with an InGaAs cladding layer.On the other hand, samples with the Si3N4-InP cap layer combination also show larger energy shifts than that with SiO2-InP cap layer combination.

Quantum Rings with Two Deeply Bound Electrons under a Magnetic Field

A model is proposed to study the quantum rings with two deeply bound electrons under a variable magnetic field. The emphasis is placed to clarify the effect of the size （diameter） and the width of the ring on the fractional Aharonov-Bohm oscillation. It was found that the reduction of size will lead to a very strong oscillation in the ground state energy and in the persistent current. The electronic correlation has also been demonstrated by showing the nodal structures of wave functions.

Recent progress on the mechanics of sharply bent DNA

Despite extensive studies on the mechanics of DNA under external constrains, such as tension, torsion, and bending, several important aspects have remained poorly understood. One biologically important example is the mechanics of DNA under sharp bending conditions, which has been debated for a decade without thorough comprehension. The debate is about the interesting phenomenon raised from a series of different experiments: sharply bent DNA has a surprisingly high apparent bending flexibility that deviates from the canonical bending elasticity of DNA. This finding has motivated various theoretical models, which mainly incorporate the excitation of mechanical defects inside severely bent DNA molecules. Here, we review the recent progress on the understanding of the mechanics of sharply bent DNA and provide our view on this important question by interrogating the theoretical foundation of these experimental measurements.

A three-stage method with efficient calculation for lot streaming flow-shop scheduling

An important production planning problem is how to best schedule jobs(or lots)when each job consists of a large number of identical parts.This problem is often approached by breaking each job/lot into sublots(termed lot streaming).When the total number of transfer sublots in lot streaming is large,the computational effort to calculate job completion time can be significant.However,researchers have largely neglected this computation time issue.To provide a practical method for production scheduling for this situation,we propose a method to address the n-job,m-machine,and lot streaming flow-shop scheduling problem.We consider the variable sublot sizes,setup time,and the possibility that transfer sublot sizes may be bounded because of capacity constrained transportation activities.The proposed method has three stages:initial lot splitting,job sequencing optimization with efficient calculation of the makespan/total flow time criterion,and transfer adjustment.Computational experiments are conducted to confirm the effectiveness of the three-stage method.The experiments reveal that relative to results reported on lot streaming problems for five standard datasets,the proposed method saves substantial computation time and provides better solutions,especially for large-size problems.

Asymptotic Structure in the Classically Forbidden Region of the Hooke’s Atoms

The two-electron Hooke's atom - a quantum mechanical system with two electrons bound in a harmonic potential - is well known for its exact analytical properties at certain oscillator strengths. The Hooke's atoms with more than two electrons offer more scope for valuable practical applications. In this work, we study the asymptotic structure of these Hooke's atoms in the classically forbidden region. The leading-order term of the long-range expression for the KS exchange-correlation potential v xc (r) is shown to be-1/r. The second and third higher order terms are also exactly obtained. Various components of v xc (r) are also studied. It is shown that the leading term of O(1/r) in vxc (r) is due to the pure Pauli correlation, while the leading contribution of the Coulomb correlation is of O(1/r3 ). Neither of them makes contribution to the term of O(1/r2 ), which is shown to be solely due to the kinetic correlation effect. Results for the two-electron Hooke's atom were obtained before in the literature. Our results reduce to those of the two-electron Hooke's atom as a special case.

Nearly deterministic quantum Fredkin gate based on weak cross-Kerr nonlinearity

A scheme of an optical quantum Fredkin gate is presented based on weak cross-Kerr nonlinearity. By an auxiliary coherent state with the cross-Kerr nonlinearity effect, photons can interact with each other indirectly, and a non-demolition measurement for photons can be implemented. Combined with the homodyne detection, classical feedforward, polarization beam splitters and Pauli-X operations, a controlled-path gate is constructed. Furthermore, a quantum Fredkin gate is built based on the controlled-path gate. The proposed Fredkin gate is simple in structure and feasible by current experimental technology.