We theoretically investigate the Kondo effect of a quantum dot embedded in a mesoscopic Aharonov-Bohm （AIR） ring in the presence of the spin flip processes by means of the one-impurity Anderson Hamiltonian. Based on...We theoretically investigate the Kondo effect of a quantum dot embedded in a mesoscopic Aharonov-Bohm （AIR） ring in the presence of the spin flip processes by means of the one-impurity Anderson Hamiltonian. Based on the slave-boson mean-field theory, we find that in this system the persistent current （PC） sensitively depends on the parity and size of the AB ring and can be tuned by the spin-flip scattering （R）. In the small AB ring, the PC is suppressed due to the enhancing R weakening the Kondo resonance. On the contrary, in the large AB ring, with R increasing, the peak of PC firstly moves up to max-peak and then down. Especially, the PC phase shift of π appears suddenly with the proper value of R, implying the existence of the anomalous Kondo effect in this system. Thus this system may be a carldidate for quantum switch.展开更多
Researchers from the CAS Key Laboratory of Quantum Information,University of Science and Technology of China have just achieved a significant progress in quantum key distribution research.Based on the self-developed a...Researchers from the CAS Key Laboratory of Quantum Information,University of Science and Technology of China have just achieved a significant progress in quantum key distribution research.Based on the self-developed active switching technology,they successfully conducted the world's longest-more than 90km-round-robin differential phase shift(RRDPS)quantum key distribution experiment.展开更多
Electron transport through a triple-terminal double-quantum-dot structure is theoretically studied. By adjusting the chemical potential in leads, two channels in this system are created, and in the presence of magneti...Electron transport through a triple-terminal double-quantum-dot structure is theoretically studied. By adjusting the chemical potential in leads, two channels in this system are created, and in the presence of magnetic flux the conductances for the two channels present remarkable difference from each other. When the quantum dots are made of ferromagnetic materials, the levels of quantum dots are spin dependent, then spin polarization comes about in the two channels. Furthermore, in some regions spin polarization in the different channels are opposite. We consider that this model can be a device prototype for spin filtering and spin separation.展开更多
All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various...All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.展开更多
基金Supported by Scientific Research Fund of Hunan Provincial Education Department under Grant No.09B079
文摘We theoretically investigate the Kondo effect of a quantum dot embedded in a mesoscopic Aharonov-Bohm （AIR） ring in the presence of the spin flip processes by means of the one-impurity Anderson Hamiltonian. Based on the slave-boson mean-field theory, we find that in this system the persistent current （PC） sensitively depends on the parity and size of the AB ring and can be tuned by the spin-flip scattering （R）. In the small AB ring, the PC is suppressed due to the enhancing R weakening the Kondo resonance. On the contrary, in the large AB ring, with R increasing, the peak of PC firstly moves up to max-peak and then down. Especially, the PC phase shift of π appears suddenly with the proper value of R, implying the existence of the anomalous Kondo effect in this system. Thus this system may be a carldidate for quantum switch.
文摘Researchers from the CAS Key Laboratory of Quantum Information,University of Science and Technology of China have just achieved a significant progress in quantum key distribution research.Based on the self-developed active switching technology,they successfully conducted the world's longest-more than 90km-round-robin differential phase shift(RRDPS)quantum key distribution experiment.
文摘Electron transport through a triple-terminal double-quantum-dot structure is theoretically studied. By adjusting the chemical potential in leads, two channels in this system are created, and in the presence of magnetic flux the conductances for the two channels present remarkable difference from each other. When the quantum dots are made of ferromagnetic materials, the levels of quantum dots are spin dependent, then spin polarization comes about in the two channels. Furthermore, in some regions spin polarization in the different channels are opposite. We consider that this model can be a device prototype for spin filtering and spin separation.
基金supported by the National Natural Science Foundation of China(51572205,11674258 and 51802093)the Joint Fund of Ministry of Education for Equipment Pre-research the Fundamental Research(6141A02022262)+1 种基金the Excellent Dissertation Cultivation Funds of Wuhan University of Technology(2018-YS-001)the Fundamental Research Funds for the Central Universities(2019zy-007)。
文摘All-inorganic zero-dimensional(0D)tetrahedrite(Cu12Sb4S13,CAS)quantum dots(QDs)have attracted extensive attention due to their excellent optical properties,bandgap tunability,and carrier mobility.In this paper,various sized CAS QDs(5.1,6.7,and 7.9 nm)are applied as a switching layer with the structure F:Sn O2(FTO)/CAS QDs/Au,and in doing so,the nonvolatile resistive-switching behavior of electronics based on CAS QDs is reported.The SET/RESET voltage tunability with size dependency is observed for memory devices based on CAS QDs for the first time.Results suggest that differently sized CAS QDs result in different band structures and the regulation of the SET/RESET voltage occurs simply and effectively due to the uniform size of the CAS QDs.Moreover,the presented memory devices have reliable bipolar resistive-switching properties,a resistance(ON/OFF)ratio larger than 104,high reproducibility,and good data retention ability.After 1.4×10^6s of stability testing and 104cycles of quick read tests,the change rate of the ON/OFF ratio is smaller than 0.1%.Furthermore,resistiveswitching stability can be improved by ensuring a uniform particle size for the CAS QDs.The theoretical calculations suggest that the space-charge-limited currents(SCLCs),which are functioned by Cu 3d,Cu 3p and S 3p to act as electron selftrapping centers due to their quantum confinement and form conduction pathways under an electric field,are responsible for the resistive-switching effect.This paper demonstrates that CAS QDs are promising as a novel resistive-switching material in memory devices and can be used to facilitate the application of next-generation nonvolatile memory.
