期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
半抛物量子阱中折射率双峰结构改变的研究(英文)
1
作者 杨晓东 郭康贤 《广州大学学报(自然科学版)》 CAS 2012年第3期39-44,共6页
吸收边缘半抛物量子阱折射率的双峰结构的改变作为入射光强度的功能一直被研究,而且已经获得运用密度矩阵和迭代法所推导的关于折射率改变的公式.并呈现了在典型的AIGaAs/GaAs量子阱中所推导的数值结果.结构表明,入射光强度和半抛物量... 吸收边缘半抛物量子阱折射率的双峰结构的改变作为入射光强度的功能一直被研究,而且已经获得运用密度矩阵和迭代法所推导的关于折射率改变的公式.并呈现了在典型的AIGaAs/GaAs量子阱中所推导的数值结果.结构表明,入射光强度和半抛物量子阱的束缚频率是对折射率双峰结构的最大影响参数. 展开更多
关键词 折射率改变 半抛物量子 量子束缚效应
下载PDF
Polaronic effect on a bound polaron
2
作者 阮永红 吴福理 《Journal of Zhejiang University Science》 CSCD 2002年第5期574-578,共5页
Feynman variational path integral theory was used to obtain the ground state energy of a polaron in a quantum well in the presence of a Coulomb potential for arbitrary values of the electron phonon coupling constan... Feynman variational path integral theory was used to obtain the ground state energy of a polaron in a quantum well in the presence of a Coulomb potential for arbitrary values of the electron phonon coupling constant α . Numerical and analytical results showed that the energy shift was more sensitive to α than to the Coulomb binding parameter ( β ) and increased with the decrease of effective quantum well width l Z . It was interesting that due to the electronic confinement in the quasi 2D (quantum well) structures, the lower bound of the strong coupling regime was shifted to smaller values of α . Comparison of the polaron in the quantum well with that in the quantum wire or dot showed that the polaronic effect strengthened with decrease of the confinement dimension. 展开更多
关键词 Bound polaron Quantum well Quantum wire Quantum dot Ground state energy
下载PDF
Suppression of Anti-resonant Effect in Presence of Band Overlap
3
作者 熊刚 《Communications in Theoretical Physics》 SCIE CAS CSCD 2010年第7期167-170,共4页
By exact resolution of coupled ideal chains connecting an extra side site,we show that the so-called'anti-resonant effect' is suppressed when the electron energy is inside the overlap region of extended bands ... By exact resolution of coupled ideal chains connecting an extra side site,we show that the so-called'anti-resonant effect' is suppressed when the electron energy is inside the overlap region of extended bands of the idealtight-binding chains.When the electronic energy is outside the band overlap region,the existence of 'anti-resonanteffect' is tuned by details of local connectivity around the extra side site and can be suppressed by introduction ofmagnetic flux. 展开更多
关键词 anti-resonant effect band overlap
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部