Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy ...Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy etching in a KOH solution. A uni- form semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets, the surface was atomically fiat in AFM surface analyses. By using a high temperature grown A1N nucleation layer, we achieved low threading dislocation density at the top most surface. Moreover, by tilting the c-axis of the GaN on the Si substrate, the effect of the thermal expansion coefficient mismatch was much reduced. As the result, we achieved a crack free （1-101）GaN template on （001）Si. On the thus prepared （1-101）GaN, a GalnN/GaN LED was fabricated, which showed excellent performance with weak quantum confined Stark effect.展开更多
基金Supported by the National Natural Science Foundation of China(No.60878002)the Science and Technology Committee of Guangdong Province(Nos.2009B011100007,2010B010800031,2010B090400130 and 8251009101000002)the Science and Technology Bureau of Guangzhou(No.2009J1-C421-1)
基金supported by the Grant in Aid for Scientific Research by JSPS and Nagoya University Akasaki Research Center
文摘Growth of semi-polar （1-101）GaN has been attempted on a patterned （001） silicon substrate adopting selective area MOVPE. The growth was initiated on （111） facets of the Si, which had been prepared by anisotropy etching in a KOH solution. A uni- form semi-polar layer was achieved by coalescence of stripes. Since the growth was performed on facets, the surface was atomically fiat in AFM surface analyses. By using a high temperature grown A1N nucleation layer, we achieved low threading dislocation density at the top most surface. Moreover, by tilting the c-axis of the GaN on the Si substrate, the effect of the thermal expansion coefficient mismatch was much reduced. As the result, we achieved a crack free （1-101）GaN template on （001）Si. On the thus prepared （1-101）GaN, a GalnN/GaN LED was fabricated, which showed excellent performance with weak quantum confined Stark effect.
