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量子阱效应及其光电性质的表面光电压谱表征
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作者 王华英 朱海丰 冯云鹏 《河北建筑科技学院学报》 2004年第3期101-104,共4页
讨论了量子阱限制效应、激子的束缚能以及激子峰的形成,分析了量子阱的光电特性及量子阱表面光电压的形成和特点。结果表明:量子阱有根本不同于体材料的光电特性。
关键词 半导体 量子 量子阱效应 表面光电压谱 激子峰
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金属薄膜中磁性交换耦合的量子阱效应机制研究新进展
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作者 张志东 《物理》 CAS 1999年第11期670-671,690,共3页
通过对电子在量子阱中的运动行为与经典的弦振动的类比,形象地介绍了金属薄膜中磁性交换耦合的量子阱效应机制研究新进展.电子的几率密度变化周期依赖于双量子阱系统的对称性,其振荡周期符合一个晶格调制波的理论预言.
关键词 金属薄膜 磁性交换耦合 量子阱效应 量子
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无结场效应管——新兴的后CMOS器件研究进展
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作者 肖德元 张汝京 《固体电子学研究与进展》 CAS CSCD 北大核心 2016年第2期87-98,共12页
迄今为止,现有的晶体管都是基于PN结或肖特基势垒结而构建的。在未来的几年里,CMOS制造技术的进步将导致器件的沟道长度小于10nm。在这么短的距离内,为使器件能够工作,将不得不采用非常高的掺杂浓度梯度。进入纳米领域,常规CMOS器件所... 迄今为止,现有的晶体管都是基于PN结或肖特基势垒结而构建的。在未来的几年里,CMOS制造技术的进步将导致器件的沟道长度小于10nm。在这么短的距离内,为使器件能够工作,将不得不采用非常高的掺杂浓度梯度。进入纳米领域,常规CMOS器件所面临的许多问题都与PN结相关,传统的按比例缩小将不再足以继续通过制造更小的晶体管而获得器件性能的提高。半导体工业界正在努力从器件几何形状,结构以及材料方面寻求新的解决方案。文中研究了无结场效应器件制备工艺技术及其进展,这些器件包括半导体无结场效应晶体管、量子阱场效应晶体管、碳纳米管场效应晶体管、石墨烯场效应晶体管、硅烯场效应晶体管、二维半导体材料沟道场效应晶体管和真空沟道场效应管等。这些器件有可能成为适用于10nm及以下技术节点乃至按比例缩小的终极器件。 展开更多
关键词 摩尔定律 CMOS器件 无结场效应 量子效应晶体管 碳纳米管场效应晶体管 石墨烯场效应晶体管 二维半导体场效应晶体管 真空沟道场效应
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Binding Energies of Screened Excitons in a Strained(111)-Oriented Zinc-Blende GaN/AlGaN Quantum Well Under Hydrostatic Pressure 被引量:6
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作者 哈斯花 班士良 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第2期234-239,共6页
We investigate the binding energies of excitons in a strained (111)-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole (e-h) gas under hydrostatic pressure by combining a variational... We investigate the binding energies of excitons in a strained (111)-oriented zinc-blende GaN/Al0.3 Ga0.7 N quantum well screened by the electron-hole (e-h) gas under hydrostatic pressure by combining a variational method and a selfconsistent procedure. A built-in electric field produced by the strain-induced piezoelectric polarization is considered in our calculations. The result indicates that the binding energies of excitons increase nearly linearly with pressure,even though the modification of strain with hydrostatic pressure is considered, and the influence of pressure is more apparent under higher e-h densities. It is also found that as the density of an e-h gas increases,the binding energies first increase slowly to a maximum and then decrease rapidly when the e-h density is larger than about 1 ×10^11 cm^-2. The excitonic binding energies increase obviously as the barrier thickness decreases due to the decrease of the built-in electric field. 展开更多
关键词 EXCITON strained zinc-blende quantum well pressure screened effect
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纳米复合稀土永磁薄膜制备成功
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《材料开发与应用》 CAS 2004年第2期6-6,共1页
关键词 纳米复合稀土永磁薄膜 制备工艺 内禀磁性 量子阱效应 磁性耦合
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Polaronic effect on a bound polaron
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作者 阮永红 吴福理 《Journal of Zhejiang University Science》 CSCD 2002年第5期574-578,共5页
Feynman variational path integral theory was used to obtain the ground state energy of a polaron in a quantum well in the presence of a Coulomb potential for arbitrary values of the electron phonon coupling constan... Feynman variational path integral theory was used to obtain the ground state energy of a polaron in a quantum well in the presence of a Coulomb potential for arbitrary values of the electron phonon coupling constant α . Numerical and analytical results showed that the energy shift was more sensitive to α than to the Coulomb binding parameter ( β ) and increased with the decrease of effective quantum well width l Z . It was interesting that due to the electronic confinement in the quasi 2D (quantum well) structures, the lower bound of the strong coupling regime was shifted to smaller values of α . Comparison of the polaron in the quantum well with that in the quantum wire or dot showed that the polaronic effect strengthened with decrease of the confinement dimension. 展开更多
关键词 Bound polaron Quantum well Quantum wire Quantum dot Ground state energy
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Stark Effect Dependence on Hydrogenic Impurities in GaAs Parabolic Quantum-Well Wires 被引量:1
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作者 WANG Sheng WEI Guo-Zhu HAN Yu 《Communications in Theoretical Physics》 SCIE CAS CSCD 2009年第11期953-959,共7页
The ground-state and lowest excited-state binding energies of a hydrogenic impurity in GaAs parabolic quantum-well wires (Q WWs) subjected to external electric and magnetic fields are investigated using the finite-d... The ground-state and lowest excited-state binding energies of a hydrogenic impurity in GaAs parabolic quantum-well wires (Q WWs) subjected to external electric and magnetic fields are investigated using the finite-difference method within the quasi-one-dimensional effective potential model. We define an effective radius Pen of a cylindrical QWW, which can describe the strength of the lateral confinement. For the ground state, the position of the largest probability density of electron in x-y plane is located at a point, while for the lowest excited state, is located on a circularity whose radius is Pen. The point and circularity are pushed along the left haft of the center axis of the quantum-well wire by the electric field dire ted along the right half. When an impurity is located at the point or within the circularity, the ground-state or lowest excited-state binding energies are the largest; when the impurity is apart from the point or circularity, the ground-state or lowest excited-state binding energies start to decrease. 展开更多
关键词 hydrogenic impurity quantum-well wire magnetic field binding energy
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注入电流对GaN基LED发光特性的影响 被引量:14
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作者 崔德胜 郭伟玲 +2 位作者 崔碧峰 闫薇薇 刘莹 《光电子.激光》 EI CAS CSCD 北大核心 2011年第9期1309-1312,共4页
通过调节量子阱中的In组分,制备了GaN基蓝光和绿光发光二极管(LED)。对两种LED进行变电流测试发现,注入电流由3 mA增加到900 mA过程中,波长有蓝移现象,且绿光LED的波长蓝移较明显。这是量子阱限制斯塔克效应(QCSE)造成的。由于绿光LED... 通过调节量子阱中的In组分,制备了GaN基蓝光和绿光发光二极管(LED)。对两种LED进行变电流测试发现,注入电流由3 mA增加到900 mA过程中,波长有蓝移现象,且绿光LED的波长蓝移较明显。这是量子阱限制斯塔克效应(QCSE)造成的。由于绿光LED中In组分含量较大,QCSE较明显。并且发现,光效迅速下降,绿光LED的光效下降幅度更大。这是由于电流不强时局域态中的电子溢出到导带与位错缺陷和空穴发生非辐射复合,电流很大时空穴量子阱中空穴分布不均匀,没有足够的空穴与导带的电子复合,电子溢出有源区形成无效的电流注入,造成光效迅速下降;绿光LED的明显蓝移使视效函数V(λ)值减小,使测量的光效下降幅度更大。 展开更多
关键词 发光二极管(LED) 氮化镓(GaN) 蓝移 光效 量子限制斯塔克效应(QCSE) 无效注入
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纳米复合稀土永磁薄膜制备成功
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《现代材料动态》 2004年第4期22-22,共1页
关键词 纳米复合稀土永磁薄膜 磁性耦合 量子阱效应 铁基稀土氮化物
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A quantum solution to Gibbs paradox with few particles
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作者 DONG Hui CAI ChengYun SUN ChangPu 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2012年第10期1727-1733,共7页
We present a fully quantum solution to the Gibbs paradox (GP) with an illustration based on a gedanken experiment with two particles trapped in an infinite potential well. The well is divided into two cells by a solid... We present a fully quantum solution to the Gibbs paradox (GP) with an illustration based on a gedanken experiment with two particles trapped in an infinite potential well. The well is divided into two cells by a solid wall, which could be removed for mixing the particles. For the initial thermal state with correct two-particle wavefunction according to their quantum statistics, the exact calculations show the entropy changes are the same for boson, fermion and non-identical particles. With the observation that the initial unmixed state of identical particles in the conventional presentations actually is not of a thermal equilibrium, our analysis reveals the quantum origin of the paradox, and confirms Jaynes' observation that entropy increase in Gibbs mixing is only due to the including more observables. To further show up the subtle role of the quantum mechanism in the GP, we study the different finite size effect on the entropy change and show the work performed in the mixing process is different for various types of particles. 展开更多
关键词 Gibbs paradox identical particles mixing entropy
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