考察脉宽t ON、峰值电流I IP、脉冲间隙调整MA、脉冲间隙t OFF对PDC加工精度和加工效率的影响.通过正交试验确定其最佳电加工工艺参数为:t ON 2μs、I IP 10 A、MA 1倍和t OFF 4μs,其加工时间为458 s;加工后YG层的表面粗糙度R a1为1.04...考察脉宽t ON、峰值电流I IP、脉冲间隙调整MA、脉冲间隙t OFF对PDC加工精度和加工效率的影响.通过正交试验确定其最佳电加工工艺参数为:t ON 2μs、I IP 10 A、MA 1倍和t OFF 4μs,其加工时间为458 s;加工后YG层的表面粗糙度R a1为1.04μm,PCD层的表面粗糙度R a2为0.59μm.在此基础上,通过单因素试验和分割试验进一步考察PIKADEN高压脉冲控制P P和高压辅助电源H P对电加工精度和效率的影响.结果发现:当P P设定为11、H P设定为013,即追加1.5 A高压辅助电流时,PDC的最佳电加工工艺参数为:t ON 4μs、I IP 10 A、MA 1倍和t OFF 4μs,其加工时间最短,为130 s;加工精度较高,加工后YG层的R a1为1.30μm、PCD层的R a2为0.56μm.与正交试验确立的最佳工艺参数相比,其加工精度相差不大,但加工效率提高了3.5倍.展开更多
A growth-type polycrystalline diamond compact （PDC） was synthesized under high temperature and high pressure （HPHT）. The infiltration technique was used with an Fe55Ni29Co16 （KOV） alloy as the sintering solvent....A growth-type polycrystalline diamond compact （PDC） was synthesized under high temperature and high pressure （HPHT）. The infiltration technique was used with an Fe55Ni29Co16 （KOV） alloy as the sintering solvent. The morphology and weight ra- tio of the PDC were investigated through scanning electron microscopy （SEM） and electron dispersion spectroscopy （EDS）. Note that the KOV alloy evenly infiltrated throughout the polycrystalline diamond （PCD） layer and WC-Co substrate in a short sintering time due to its low viscosity and high soakage capability. A transition layer confirmed the presence of the M^C phase near the interface of the PDC, which can make the diamond layer and WC-Co substrate combine as a complex material. X-ray diffraction （XRD） performed on the PCD layer confirmed the presence of cubic diamond, WC, cubic CoCx, the high tempera- ture cubic phase of c^-Co, the alloy phase of FeNix, and no graphite phase. Besides, a surface residual stress of the PCD layer, measured with reasonable accuracy using micro-Raman spectroscopy, is found to be a homogeneous compressive stress with an average value of 0.16 GPa, much lower than that of the powders-mixing method.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 50801030 and 50731006)the Open Project of State Key Laboratory of Superhard Materials of Jilin University (Grant No.201201)
文摘A growth-type polycrystalline diamond compact （PDC） was synthesized under high temperature and high pressure （HPHT）. The infiltration technique was used with an Fe55Ni29Co16 （KOV） alloy as the sintering solvent. The morphology and weight ra- tio of the PDC were investigated through scanning electron microscopy （SEM） and electron dispersion spectroscopy （EDS）. Note that the KOV alloy evenly infiltrated throughout the polycrystalline diamond （PCD） layer and WC-Co substrate in a short sintering time due to its low viscosity and high soakage capability. A transition layer confirmed the presence of the M^C phase near the interface of the PDC, which can make the diamond layer and WC-Co substrate combine as a complex material. X-ray diffraction （XRD） performed on the PCD layer confirmed the presence of cubic diamond, WC, cubic CoCx, the high tempera- ture cubic phase of c^-Co, the alloy phase of FeNix, and no graphite phase. Besides, a surface residual stress of the PCD layer, measured with reasonable accuracy using micro-Raman spectroscopy, is found to be a homogeneous compressive stress with an average value of 0.16 GPa, much lower than that of the powders-mixing method.
