In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interf...In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interface in this structure, is given according to the experiment. The results show that the inverted pyramids surface has a low refection about 8%, in the anisotropic etching 70 ℃, 5% TMAH concentration, corrosion time of 90 min or 30 rain. Low refection means high light emitting rate. Most of the structure and manufacturing process can be compatible with planar CMOS technology, which makes the silicon LED greater potential for development in the future.展开更多
文摘In this paper, a novel and reliable structure of the side passivated emitter and the rear locallydiffused（PERL） silicon light emitting diodes （LEDs） is proposed. The inverted pyramids surface, the important interface in this structure, is given according to the experiment. The results show that the inverted pyramids surface has a low refection about 8%, in the anisotropic etching 70 ℃, 5% TMAH concentration, corrosion time of 90 min or 30 rain. Low refection means high light emitting rate. Most of the structure and manufacturing process can be compatible with planar CMOS technology, which makes the silicon LED greater potential for development in the future.
