金的工业应用

金具有良好的综合性质致使其在工业上被广泛应用。这些用途的用金量每年接近450t。有很好的理由可以推测在以后的几年里金的用途将会增加。

Wear behavior of high strength and high conductivity Cu alloys under dry sliding

In order to study the wear behavior of different kinds of contact wires,the dry sliding wear behaviors of Cu-Sn,Cu-Ag and Cu-Mg alloys prepared by up-drawn continuous casting and followed continuous extrusion were studied.The research was tested on a block-on-ring wear tester.The results indicate that the friction coefficient is remarkably influenced by the formation of a continuous tribofilm,which consists of oxidation film.The abrasion,adhesion,oxidation and plastic deformation are observed.Oxidation and abrasion wear mechanisms dominate at the lower sliding velocity and load.The combination of oxidation and adhesion play leading roles with the increasing load and velocity.Plastic deformation is detected under higher applied load and sliding velocities.

Effect of Zr and Sc on mechanical properties and electrical conductivities of Al wires

In order to obtain the Al wires with good mechanical properties and high electrical conductivities, conductive wires of Al-0.16 Zr, Al-0.16 Sc, Al-0.12Sc-0.04Zr（mass fraction, %） and pure Al（99.996%） were produced with the diameter of 9.5 mm by continuous rheo-extrusion technology, and the extruded materials were heat treated and analyzed. The results show that the separate additions of 0.16% Sc and 0.16% Zr to pure Al improve the ultimate tensile strength but reduce the electrical conductivity, and the similar trend is found in the Al-0.12Sc-0.04 Zr alloy. After the subsequent heat treatment, the wire with the optimum comprehensive properties is Al-0.12Sc-0.04 Zr alloy, of which the ultimate tensile strength and electrical conductivity reach 160 MPa and 64.03%（IACS）, respectively.

微电子器件封装铜线键合可行性分析

虽然在集成电路封装工艺中金导线键合是主流制程,但是目前采用铜导线替代金导线键合已经在半导体封装领域形成重要研究趋势。文章对微电子封装中铜导线键合可行性进行了分析,主要包括铜导线与金导线的性能比较(包括电学性能、物理参数、机械参数等),铜导线制备和微组织结构分析,铜导线焊合中的工艺研发及铜导线焊合可靠性分析等。当今半导体生产商关注铜导线不仅是因为其价格成本优势,更由于铜导线具有良好的电学和机械特性,同时文中也介绍了铜导线键合工艺存在的诸多问题和挑战,对将来铜导线在集成电路封装中的大规模应用和发展具有一定的参考意义。

Heat Resisting Mechanism of Heat-Resisting Aluminum Alloy Conductor and Its Application in Transmission Line

In this paper the heat withstanding mechanism of heat-resisting aluminum alloy conductor is discussed, the types and performance of the conductor and its application on transmission lines are analyzed and introduced, and suggestions on accelerating exploitation and application of the conductor are put forward.

Temperature-Dependent Electrical Conductance of Bi Nanowires

The single crystal bismuth nanowire arrays grown along [0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi- tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along [0112] and the electric con- ductance of the nanowires had a strong temperature dependence.

Uniform wire segmentation algorithm of distributed interconnects

A uniform wire segmentation algorithm for performance optimization of distributed RLC interconnects was proposed in this paper. The optimal wire length for identical segments and buffer size for buffer inser-tion are obtained through computation and derivation, based on a 2-pole approximatian model of distribut-ed RLC interconnect. For typical inductance value and long wires under 180nm technology, experiments show that the uniform wire segmentation technique proposed in the paper can reduce delay by about 27%～56%, while requires 34%～69% less total buffer usage and thus 29% to 58% less power consump-tion. It is suitable for long RLC interconnect performance optimization.

Massless and Massive Particle-in-a-Box States in Single- and Bi-Layer Graphene

Electron transport through short, phase-coherent metal-graphene-metal devices occurs via resonant transmission through particle-in-a-box-like states defined by the atomically-sharp metal leads. We study the spectrum of particle-in-a-box states for single- and bi-layer graphene, corresponding to massless and massive two-dimensional （2-D） fermions. The density of states D as a function of particle number n shows the expected relationships D（n） -n1/2 for massless 2-D fermions （electrons in single-layer graphene） and D（n） -constant for massive 2-D fermions （electrons in bi-layer graphene）. The single parameters of the massless and massive dispersion relations are found, namely Fermi velocity vF = 1.1 × 10^6 m/s and effective mass m＊ = 0.032 me, where me, is the electron mass, in excellent agreement with theoretical expectations.

The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.

MoS2-wrapped silicon nanowires for photoelectro- chemical water reduction

Integration of molybdenum disulfide （MoS2） onto high surface area photocathod is highly desired to minimize the overpotential for the solar-powered hydrogen evolution reaction （HER）. Semiconductor nanowires （NWs） are beneficial use in photoelectrochemistry because of their large electrochemically availab surface area and inherent ability to decouple light absorption and the transpo of minority carriers. Here, silicon （Si） NW arrays were employed as a mod photocathode system for MoS2 wrapping, and their solar-driven HER activil was evaluated. The photocathode is made up of a well-defined MoSJTiO2/Si coaxial NW heterostructure, which yielded photocurrent density up to 15 mA/cm2 （at 0 V vs. the reversible hydrogen electrode （RHE）） with goo stability under the operating conditions employed. This work reveals the earth-abundant electrocatalysts coupled with high surface area NW electrod~ can provide performance comparable to noble metal catalysts for photocathod hydrogen evolution.

Structure,magnetic properties and magnetocaloric effects of Fe_(50)Mn_(15-x)Co_xNi_(35) alloys

FesoMn15-xCoxNi35 （x=0, 1, 3, 5, 7） alloys were prepared by arc melting under purified argon atmosphere. The ingots were homogenized at 930℃ for 90 h followed by water quenching. The crystal structure, magnetic properties and magnetocaloric effects of the alloys were studied by X-ray diffraction （XRD） and MPMS-7-type SQUID. The results show that all samples still maintained a single γ-（Fe, Ni）-type phase structure. With the increase of the content of Co, the Curie temperatures of these alloys increased and exhibited a second-order magnetic transition from ferromagnetic （FM） to paramagnetic （PM） state near Curie temperature. The maximum magnetic entropy change and the relative cooling power of Fe50Mn10CosNi35 alloy was 2.55 J/kg.K and 181 J/kg, respectively, for an external field change of 5 T. Compared with rare earth metal Gd, FesoMnls-xCoxNi35 series of alloys have obvious advantage in resource price; their Curie temperatures can be tuned to near room temperature, maintain a relatively large magnetic entropy change at the same time and they are a type of potential magnetic refrigeration materials near room temperature.

Piezotronic transistors in nonlinear circuit:Model and simulation

For the materials that simultaneously exhibit piezoelectric and semiconductor properties,such as wurtzite Zn O,Ga N and In N,as well as two-dimensional single Mo S2,piezoelectric charges induced by externally applied strain can tune/control carrier transport at a metal-semiconductor contact or semiconductor junction,which is named piezotronic effect.Metal-semiconductor-metal piezotronic transistors are key piezotronic nanodevices for electromechanical applications,and they are typical nonlinear elements.In this paper,a simplified current-voltage analysis solution of piezotronic transistors is developed,which can be used for circuit design and simulation.Furthermore,the typical nonlinear circuit:Chua's circuit based on piezotronic transistors is simulated.We find that the output signal of the piezotronic transistor circuit can be switched and changed asymmetrically by externally applied strain.This study provides insight into the nonlinear properties of the piezotronic transistor,as well as guidance for piezotronic transistor nonlinear circuit application.