TOF-SIMS法研究金属-半导体界面

飞行时间二次离子质谱仪(Time of flight secondary ion mass spectrometry,TOF-SIMS)对所有元素具有极高的检测灵敏度,应用此方法研究了经550℃退火处理,Au/AuBe/Au与GaP金属-半导体的各元素强度分布特性,依次分析金属表面、金属层内、金属-半导体界面、半导体内部,使用O2+正离子与Cs+负离子分析Au、Be、O、Ga、P五类元素在各层内的强度,观察金属层与半导体界面内Be、O、Au、P峰位置的各元素SIMS图,表明在金属表面3~10nm内含有Au、Be、O、Ga、P元素,在金属内部,O元素在AuBe层有明显分布,在半导体材料GaP层内含有Be、Au元素,且Be的扩散深度比Au要深,在AuBe层及界面处用XPS分析化学组分。

电子显微镜在金属-半导体纳米线界面原位合金化中的应用

利用原位电子显微方法研究了金属-ZnSe半导体纳米线界面合金化过程,结果表明:在脉冲电流的作用下,ZnSe纳米线可以产生明显的焦耳热效应,导致金属-ZnSe纳米线界面发生合金化反应。通过调整纳米线与金属电极的接触面积,可将焦耳热效应准确控制在界面内,进而实现纳米尺度的合金化反应。

绝缘层LiF/Al电极对提高P-PPV发光器件发光性能的研究

为了提高聚合物电致发光器件中Ba(Ca)/A l阴极的稳定性,在该阴极与聚合物发光材料poly(2-(4-ethylexyl)phenyl-1,4-phenylene vinylene)(P-PPV)层之间插入一层7 nm的L iF绝缘层,发光器件的发光性能在多项参数(发光器件的电压-电流特性、发光强度及外量子效率,以及电流效率等发光性能指标)上能够与工作性能优良但稳定性较差的Ba(Ca)/A l电极结构PLED s器件的发光特性具有可比性。这对于研制高效率、高稳定的聚合物电致发光器件并最终将其用于商业目的,具有重大现实意义。

Probing Co/Si interface behaviour by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM)

In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion be- haviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) sur- faces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, “Co-Si” reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing. Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed is- land growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentra- tion decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behav- iour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 °C are elongated with growth direc- tions alternate between the two perpendicular [ 110 ] and [110] directions. Triangular islands are observed on Si (111) surface.

Phonons in Quantum-Dot Quantum Well

Phonon modes of AlAs/GaAs/AlAs and GaAs/AlAs/metal Pb quantum-dot quantum wells (QDQW's)with the whole scale up to 90 A are calculated by using valence force field model (VFFM) based on group theory.Their optical frequency spectra are divided into two nonoverlapping bands, the AMs-like band and the GaAs-like band,originated from and having frequency interval inside the bulk AlAs optical band and bulk GaAs optical band, respectively.The GaAs-LO (F)-like modes of QDQW's that have maximum bulk GaAs-LO (F) parentages in all modes covering the whole frequency region and all symmetries have always A1 symmetry. Its frequency is controllable by adjusting the structure parameters. In AlAs/GaAs/AlAs, it may be controlled to meet any designed frequency in GaAs-like band.The results on GaAs/AMs/metal Pb QDQW's show the same effect of reducing in interface optical phonons by using the metal/semiconductor interface revealed ever by macroscopic model. The frequency spectra in both GaAs-like and AlAs-like optical phonon bands are independent of the thickness of Pb shell as long as the thickness of Pb shell is no less than 5 A. Defects at metal/AlAs interface have significant influence to AMs-like optical modes but have only minor influence to GaAs-like optical modes. All these results are important for the studying of the e-ph interaction in QD structures.

降低金属与n型Ge接触电阻方法的研究进展

Ge材料中n型杂质激活的电子浓度偏低,以及费米能级钉扎效应导致的金属与n型Ge接触电子势垒高度偏大,使金属与n型Ge接触电阻较大。基于Ge的材料特性,分析了缺陷对杂质浓度以及费米能级钉扎对电子势垒高度的影响;综述了提高Ge材料中n型掺杂电子浓度的方法,如激光退火、磷和锑共掺、循环离子注入/退火、氟钝化等;讨论了降低金属与n型Ge接触电子势垒高度的途径,即插入薄的界面层形成金属-界面层-Ge接触。电子浓度的提高,以及电子势垒高度的降低,有效地减小了金属与n型Ge接触电阻。