We report the studies of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MISHEMTs) using reactive-sputtered La2O3 as the gate dielectric and the surface passivation layer.The device presents...We report the studies of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MISHEMTs) using reactive-sputtered La2O3 as the gate dielectric and the surface passivation layer.The device presents a maximum drain current of 829 mA/mm and a maximum transconductance of 105 mS/mm,while the gate leakage current in the reverse direction is reduced by two orders of magnitude and the forward gate voltage swing increased to +5 V without gate breakdown.Compared to HEMT devices of similar geometry,MISHEMTs present a significant drain current recovery form current collapse.展开更多
Y2000-62067-44 0009263绝缘体上硅技术,器件与挑战=Silicon on insulatortechnology,devices,and challenges[会,英]/Cristoloveanu,S.//1998 IEEE International Conferenceon Optoelectronic and Microelectronic Materials and De-v...Y2000-62067-44 0009263绝缘体上硅技术,器件与挑战=Silicon on insulatortechnology,devices,and challenges[会,英]/Cristoloveanu,S.//1998 IEEE International Conferenceon Optoelectronic and Microelectronic Materials and De-vices.—44～48(EC)展开更多
基金Supported by the National Natural Science Foundation of China(61822407,62074161,62004213)the National Key Research and De-velopment Program of China under(2018YFE0125700)。
文摘We report the studies of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors(MISHEMTs) using reactive-sputtered La2O3 as the gate dielectric and the surface passivation layer.The device presents a maximum drain current of 829 mA/mm and a maximum transconductance of 105 mS/mm,while the gate leakage current in the reverse direction is reduced by two orders of magnitude and the forward gate voltage swing increased to +5 V without gate breakdown.Compared to HEMT devices of similar geometry,MISHEMTs present a significant drain current recovery form current collapse.
文摘Y2000-62067-44 0009263绝缘体上硅技术,器件与挑战=Silicon on insulatortechnology,devices,and challenges[会,英]/Cristoloveanu,S.//1998 IEEE International Conferenceon Optoelectronic and Microelectronic Materials and De-vices.—44～48(EC)
