We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors(SBMOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant im...We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors(SBMOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance C_(gs) with respect to V_(gs) at various V_(ds), we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each C_(gs) peak, the difference between V_(gs) and V_(ds) is equal to the Schottky barrier height(SBH) for NiSi_2 on highly doped silicon,which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi_2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.展开更多
Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by usi...Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C-V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I-V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R s are 11.9 and 1.0 k respectively. The values of barrier height B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C-V testing results.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61674161the Open Project of State Key Laboratory of Functional Materials for Informatics
文摘We present an experimental analysis of Schottky-barrier metal-oxide-semiconductor field effect transistors(SBMOSFETs) fabricated on ultrathin body silicon-on-insulator substrates with a steep junction by the dopant implantation into the silicide process. The subthreshold swing of such SB-MOSFETs reaches 69 mV/dec. Emphasis is placed on the capacitance-voltage analysis of p-type SB-MOSFETs. According to the measurements of gate-to-source capacitance C_(gs) with respect to V_(gs) at various V_(ds), we find that a maximum occurs at the accumulation regime due to the most imbalanced charge distribution along the channel. At each C_(gs) peak, the difference between V_(gs) and V_(ds) is equal to the Schottky barrier height(SBH) for NiSi_2 on highly doped silicon,which indicates that the critical condition of channel pinching off is related with SBH for source/drain on channel. The SBH for NiSi_2 on highly doped silicon can affect the pinch-off voltage and the saturation current of SB-MOSFETs.
文摘Ion-implantation layers are fabricated by multiple nitrogen ion-implantations (3 times for sample A and 4 times for sample B) into a p-type 4H-SiC epitaxial layer. The implantation depth profiles are calculated by using the Monte Carlo simulator TRIM. The fabrication process and the I-V and C-V characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs) fabricated on these multiple box-like ion-implantation layers are presented in detail. Measurements of the reverse I-V characteristics demonstrate a low reverse current, which is good enough for many SiC-based devices such as SiC metal-semiconductor field-effect transistors (MESFETs), and SiC static induction transistors (SITs). The parameters of the diodes are extracted from the forward I-V and C-V characteristics. The values of ideality factor n of SBDs for samples A and B are 3.0 and 3.5 respectively, and the values of series resistance R s are 11.9 and 1.0 k respectively. The values of barrier height B of Ti/4H-SiC are 0.95 and 0.72 eV obtained by the I-V method and 1.14 and 0.93 eV obtained by the C-V method for samples A and B respectively. The activation rates for the implanted nitrogen ions of samples A and B are 2% and 4% respectively extracted from C-V testing results.
