Ternary Zn1-xCdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy（TEM） and X-ray diff...Ternary Zn1-xCdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy（TEM） and X-ray diffraction（XRD） analysis, respectively. The XRD measurement shows that the wurtzite-type structure of (Zn1-xCdxO) can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.展开更多
基金Project(G2000068306) supported by the National Basic Research Program of China Project(00085) supported by Testand Analysis Foundation of Zhejiang Province
文摘Ternary Zn1-xCdxO alloying films were deposited on silicon substrates by a reactive magnetron sputtering method. The structures of the films were characterized by transmission electron microscopy（TEM） and X-ray diffraction（XRD） analysis, respectively. The XRD measurement shows that the wurtzite-type structure of (Zn1-xCdxO) can be stabilized up to Cd content of x=0.53 without a cubic CdO phase separation. The TEM measurement shows that the films have a columnar structure and the grains are highly c-axis oriented perpendicularly on silicon substrate although some grain boundaries are slightly tilted. High resolution TEM observation indicates that a native layer of amorphous SiO2 exists at the ZnCdO/Si interface and that ZnCdO grains with c-axis preferred orientation nucleate directly on substrate surface.
