金属卤化物钙钛矿半导体中的自陷激子

在极性晶体中,由于强电子–声子耦合,激发的电子–空穴对可以被晶格畸变产生的形变势场所俘获,形成自陷激子。金属卤化物钙钛矿半导体作为一种离子晶体已经被证实具有高效的自陷激子发光,成为制备新一代高质量白光光源的理想候选材料。然而,对于金属卤化物钙钛矿中自陷激子发光机制的理解仍然较为匮乏,远远落后于器件方面的发展。为此,本文主要从自陷激子的基础物理角度出发,总结了近年来关于金属卤化物钙钛矿半导体中自陷激子的形成条件、形成机制以及相关激发态动力学的研究进展,并对未来基于该体系中自陷激子机理方面的研究做出展望,从而为该体系中自陷激子的研究提供更加清晰的物理图像。

熔体法制备无机钙钛矿半导体核辐射探测晶体与器件的研究进展

钙钛矿材料在太阳能电池和光电探测等领域的快速发展,带动了其在核辐射探测领域的应用研究。钙钛矿晶体结构拥有多样化的结构容忍性,如何设计组分并挖掘材料的相关特性具有很大的科学挑战。其次,针对新型钙钛矿材料特性,需要根据应用场景来优化半导体器件设计,才能最大限度地发挥其辐射探测性能。鉴于此,本文从熔体法晶体生长及半导体器件设计等角度,探讨了不同维度钙钛矿结构的材料特性及辐射探测器件性能,以期为该材料在核辐射探测领域的发展提供参考。

溶液空间限域法制备有机-无机杂化卤化铅钙钛矿单晶薄膜及其器件应用研究进展

近年来,有机-无机杂化卤化铅钙钛矿材料因其出色的光电特性在国际上备受瞩目,并已成功应用于太阳能光伏、光电探测、电致发光等多个领域。目前绝大部分器件研究都集中在钙钛矿多晶材料上,但钙钛矿单晶材料拥有更低的缺陷态密度、更高的载流子迁移率、更长的载流子复合寿命、更宽的光吸收范围,以及更高的稳定性等优异的性质,可有效减少载流子传输过程中的散射损失,以及在晶界处的非辐射复合,并抑制离子迁移所引起的迟滞效应。采用钙钛矿单晶薄膜作为器件有源层有望制备性能更高效且更稳定的钙钛矿光电器件。目前,已报道的多种钙钛矿单晶薄膜制备方法包括溶液空间限域法、化学气相沉积法、自上而下加工法等,其中溶液空间限域法的发展和应用最为广泛。本文聚焦利用溶液空间限域法制备高质量钙钛矿单晶薄膜的相关方法,以及钙钛矿单晶薄膜在光电探测器、太阳能电池、场效应晶体管和发光二极管等相关器件应用中的研究进展,并对钙钛矿单晶薄膜及其光电器件的未来发展趋势进行了展望。

脉冲激光用于钙钛矿CsPbBr_(3)半导体中载流子输运性能表征

钙钛矿半导体具有优异的光电性能,被认为是新一代室温核辐射探测半导体。准确测定其载流子输运性能对于获得高性能钙钛矿半导体核辐射探测器至关重要。该文发展了以脉冲激光为激发源的钙钛矿半导体载流子输运性能表征方法。基于所制备的Au/CsPbBr_(3)/Bi器件,将脉冲激光由阳极面入射,并采集探测器阴极的脉冲信号,通过不同偏压下脉冲信号的上升时间及幅值分布,拟合得到CsPbBr_(3)半导体中空穴载流子的迁移率μh为11.78 cm^(2)·V^(-1)·s^(-1),迁移率寿命积μτh为2.82×10^(-3)cm^(2)·V^(-1),与传统以241Amα粒子为激发源的表征结果相当。该工作证明了以脉冲激光为激发源表征钙钛矿半导体的输运性能的可行性。基于CsPbBr_(3)半导体较好的载流子输运性能,该探测器表现出良好的γ射线探测性能,对57Co@122 keVγ射线的能量分辨率为8.5%。

阴极界面修饰层改善平面p-i-n型钙钛矿太阳能电池的光伏性能

有机/无机杂化金属卤化物钙钛矿半导体材料结合了有机材料良好的溶液可加工性以及无机材料优越的光电特性,近几年受到了热捧,成为太阳能电池领域一颗耀眼的明星.伴随着钙钛矿薄膜结晶过程和形貌的优化、器件结构的改进以及电极界面材料的开发,这类有机/无机杂化金属卤化物钙钛矿太阳能电池的光电转换效率从最初的3.8%迅速提高到目前最高的22.1%.其中界面工程在提升器件性能上发挥着极其重要的作用.本文总结了平面p-i-n型钙钛矿太阳能电池中阴极界面修饰层(CBL)的研究进展.CBL从材料上讲可分为无机金属氧化物、金属或金属盐以及有机材料,从构成上讲可分为单层CBL、双层CBLs以及共混型CBL.本文对这些类型的CBL分别给予详细的介绍.最后,我们归纳出CBL在改善器件效率和稳定性上所起的作用以及理想CBL所应满足的要求,希望能为以后阴极界面修饰材料的设计提供一定的借鉴.

Fine-control-valve of halide perovskite single crystal quality for high performance X-ray detection

Halide perovskite single crystals(HPSCs)provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials,while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption,resulting in a soaring or slumping crystal growth rate of HPSCs.Here,we developed a universal and facile solvent-vola tilization-limited-growth(SVG)strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes.The grown HPSCs by SVG method exhibited a record low trap density of 2.8×10^(8)cm^(-3)and a high charge carrier mobility-lifetime product(μτproduct)of 0.021 cm2/V,indicating the excellent crystal quality.The crystal surface defects were further passivated by oxygen suppliers as Lewis base,which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection.Such HPSC X-ray detector displayed a high sensitivity of 1274μC/(Gyair cm^(2))with a lowest detectable dose rate of 0.56μGyair/s under 120 keV hard X-ray.Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated,which not only shows the bright future for product quality inspection and non-destructive materials analysis,but also paves the way for growing high quality single crystals and fabricating polycrystalline films.

Transition metal oxides as hole-transporting materials in organic semiconductor and hybrid perovskite based solar cells

Organic polymer solar cells （OSCs） and organic-inorganic hybrid perovskite solar cells （PSCs） have achieved notable progress over the past several years. A central topic in these fields is exploring electronically efficient, stable and effective hole-transporting layer （HTL） materials. The goal is to enhance hole-collection ability, reduce charge recombination, increase built-in voltage, and hence improve the performance as well as the device stability. Transition metal oxides （TMOs） semiconductors such as NiOx, CuOx, CrOx, MoOx, WO3, and V2O5, have been widely used as HTLs in OSCs. These TMOs are naturally adopted into PSC as HTLs and shows their importance. There are similarities, and also differences in applying TMOs in these two types of main solution processed solar cells. This concise review is on the recent developments of transition metal oxide HTL in OSCs and PSCs. The paper starts from the discussion of the cation valence and electronic structure of the transition metal oxide materials, followed by analyzing the structure-property relationships of these HTLs, which we attempt to give a systematic introduction about the influences of their cation valence, electronic structure, work ftmction and film property on device performance.

Quantum confinement effect of two-dimensional all-inorganic halide perovskites

Quantum confinement effect（QCE）, an essential physical phenomenon of semiconductors when the size becomes comparable to the exciton Bohr radius, typically results in quite different physical properties of low-dimensional materials from their bulk counterparts and can be exploited to enhance the device performance in various optoelectronic applications. Here, taking Cs Pb Br3 as an example, we reported QCE in all-inorganic halide perovskite in two-dimensional（2D） nanoplates. Blue shifts in optical absorption and photoluminescence spectra were found to be stronger in thinner nanoplates than that in thicker nanoplates, whose thickness lowered below -7 nm. The exciton binding energy results showed similar trend as that obtained for the optical absorption and photoluminescence. Meanwile, the function of integrated intensity and full width at half maximum and temperature also showed similar results, further supporting our conclusions. The results displayed the QCE in all-inorganic halide perovskite nanoplates and helped to design the all-inorganic halide perovskites with desired optical properties.