O482.31 2003064431制备及钝化条件对多孔硅发光性能的影响=Influences ofpreparation and passivated conditions on the luminescence properties of porous silicon[刊,中]/李宏建(湖南大学光电子材料研究所.湖南,长沙(410082)),赵...O482.31 2003064431制备及钝化条件对多孔硅发光性能的影响=Influences ofpreparation and passivated conditions on the luminescence properties of porous silicon[刊,中]/李宏建(湖南大学光电子材料研究所.湖南,长沙(410082)),赵楚军…∥光电子·激光.-2003,14(1).-54-57研究了氧化电流密度对多孔硅(PS)PL谱的影响。结果表明,随着氧化电流密度增大,PS的微晶Si平均尺寸减小,且尺寸大的微晶Si数量也减少,说明制备条件对钝化PS的发光有影响。PS经适当的高温氧化处理后,其PL谱会发生明显变化,选用含有胺基的正丁胺,采用射频辉光放电法对PS进行钝化处理,在一定程度上提高了PS的发射强度伴随发光峰位的较大蓝移;其钝化PS的荧光谱随钝化温度和钝化时间变化,说明钝化条件对钝化PS的发光有直接影响。由此。展开更多
For simulating the real deactivation of hollow titanium silicalite(HTS) zeolite in commercial ammoximation process, HTS was treated by 10% NH_3·H_2O solution at 120 ℃ in stirred autoclave. It is found that a par...For simulating the real deactivation of hollow titanium silicalite(HTS) zeolite in commercial ammoximation process, HTS was treated by 10% NH_3·H_2O solution at 120 ℃ in stirred autoclave. It is found that a part of HTS zeolite crystals dissolved in the hot NH_3·H_2O solution, and the specific surface area and pore volume continuously decreased with the increase in NH_3 hydrothermal treatment time. Meanwhile, the transformation of framework Ti species into extraframework Ti species was detected by the spectroscopic methods. However, the extraframework Ti species were still in a highly dispersed state after the hydrothermal and thermal treatments as shown by TEM images, while the formation of new acid sites was not detected. Upon combining the results of characterization with catalytic performance of HTS, the main deactivation reason for this material had been determined, which might be attributed to the reduction of specific surface area and active centers after basic treatment and calcination of HTS samples. And then the possible mechanism of simulated deactivation of HTS zeolite was proposed, which could describe the elemental reaction steps much more visually and directly.展开更多
The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum pass...The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.展开更多
文摘O482.31 2003064431制备及钝化条件对多孔硅发光性能的影响=Influences ofpreparation and passivated conditions on the luminescence properties of porous silicon[刊,中]/李宏建(湖南大学光电子材料研究所.湖南,长沙(410082)),赵楚军…∥光电子·激光.-2003,14(1).-54-57研究了氧化电流密度对多孔硅(PS)PL谱的影响。结果表明,随着氧化电流密度增大,PS的微晶Si平均尺寸减小,且尺寸大的微晶Si数量也减少,说明制备条件对钝化PS的发光有影响。PS经适当的高温氧化处理后,其PL谱会发生明显变化,选用含有胺基的正丁胺,采用射频辉光放电法对PS进行钝化处理,在一定程度上提高了PS的发射强度伴随发光峰位的较大蓝移;其钝化PS的荧光谱随钝化温度和钝化时间变化,说明钝化条件对钝化PS的发光有直接影响。由此。
基金financially supported by the National Basic Research Program of China(973 Program,2006CB202508)the China Petrochemical Corporation(SINOPEC Group 20673054)
文摘For simulating the real deactivation of hollow titanium silicalite(HTS) zeolite in commercial ammoximation process, HTS was treated by 10% NH_3·H_2O solution at 120 ℃ in stirred autoclave. It is found that a part of HTS zeolite crystals dissolved in the hot NH_3·H_2O solution, and the specific surface area and pore volume continuously decreased with the increase in NH_3 hydrothermal treatment time. Meanwhile, the transformation of framework Ti species into extraframework Ti species was detected by the spectroscopic methods. However, the extraframework Ti species were still in a highly dispersed state after the hydrothermal and thermal treatments as shown by TEM images, while the formation of new acid sites was not detected. Upon combining the results of characterization with catalytic performance of HTS, the main deactivation reason for this material had been determined, which might be attributed to the reduction of specific surface area and active centers after basic treatment and calcination of HTS samples. And then the possible mechanism of simulated deactivation of HTS zeolite was proposed, which could describe the elemental reaction steps much more visually and directly.
文摘The surface of silicon was passivated by A1203 and acidify using nitric acid with SiOx as the bi-layer, it was expected that hydrogen bonding reduce interface states and negative field effect which yields maximum passivation. By optimizing the thickness of passivation layer and annealing condition, the minority carrier lifetime of p-type single crystalline Czochralski wafer could be improved from 10 μs to 190 μs. The formation and variation of hillock defect on passivation layer was founded to be affected by the thermal annealing temperature. For the purpose of obtaining high minority carrier lifetime and low hillock defect density simultaneously, using a lower heating and cooling speed in thermal annealing process is suggested.
