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PECVD制备新型介质薄膜碳氮化硅工艺性能研究
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作者 王柏青 张克云 +2 位作者 包宗明 王焕杰 王季陶 《功能材料》 EI CAS CSCD 1994年第5期412-415,共4页
研究了PECVD法制备新型介质膜碳氮化硅(SiCxNy:H)的工艺参数对淀积过程的影响。讨论了退火对该薄膜的影响,发现经退火后,其电阻率有明显的下降,氢含量也大大减少,但是膜的结构仍然是非晶态的。最后对该薄膜的特性进... 研究了PECVD法制备新型介质膜碳氮化硅(SiCxNy:H)的工艺参数对淀积过程的影响。讨论了退火对该薄膜的影响,发现经退火后,其电阻率有明显的下降,氢含量也大大减少,但是膜的结构仍然是非晶态的。最后对该薄膜的特性进行测试,表明碳氮化硅薄膜具有较好的绝缘性能。 展开更多
关键词 碳氮硅薄膜 淀积工艺 钝化模 集成电路 PECVD
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Microstructure,hardness and corrosion properties of laser processed Ti6Al4V-based composites 被引量:5
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作者 N.M.BALOYI A.P.I.POPOOLA S.L.PITYANA 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2015年第9期2912-2923,共12页
Nb and Ti-13 Nb powders were used for improving the surface of Ti6Al4 V alloy.The deposition of the powders was carried out at various laser powers.The scanning electron microscopy(SEM)-EDS and optical microscopy we... Nb and Ti-13 Nb powders were used for improving the surface of Ti6Al4 V alloy.The deposition of the powders was carried out at various laser powers.The scanning electron microscopy(SEM)-EDS and optical microscopy were used for characterization.X-ray diffractometer(XRD) was used for analyzing the elemental composition and phase constituents.The hardness,wear and corrosion properties were achieved.The corrosion and the wear behaviours of the deposited layers were studied in a Hanks solution(simulated body fluid,SBF).The microstructures of Nb coatings reveal the presence of orthorhombic,dendritic α″ and metastable β-Nb phases which produce uneven hardness with an average of HV 364.For Ti-13 Nb coatings,martensitic α′ and metastable β-Nb phases with an average hardness of HV 423 were observed.The resistance of wear on dry sliding of Ti-13 Nb coating is attributed to the increase in hardness.Experimental results indicate that deposition of Nb and Ti-13 Nb on Ti6Al4 V grossly reduces the mass fractions of Al and V in all coatings.In SBF,Nb reinforcement produces the best coating that reveals the best wear and corrosion resistances as compared with the substrate.Hence,this coating will perform best for orthopaedic implant material enhancement. 展开更多
关键词 Ti6Al4V-based composite Nb simulated body fluid laser deposition PASSIVATION MICROSTRUCTURE corrosion property
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Deactivation Behavior of Hollow Titanium Silicalite Zeolite in Aqueous Ammonia Solution under Simulated Industrial Cyclohexanone Ammoximation Conditions 被引量:2
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作者 Xia Changjiu Lin Min +3 位作者 Peng Xinxin Zhu Bin Xu Guangtong Shu Xingtian 《China Petroleum Processing & Petrochemical Technology》 SCIE CAS 2016年第4期1-10,共10页
For simulating the real deactivation of hollow titanium silicalite(HTS) zeolite in commercial ammoximation process, HTS was treated by 10% NH_3·H_2O solution at 120 ℃ in stirred autoclave. It is found that a par... For simulating the real deactivation of hollow titanium silicalite(HTS) zeolite in commercial ammoximation process, HTS was treated by 10% NH_3·H_2O solution at 120 ℃ in stirred autoclave. It is found that a part of HTS zeolite crystals dissolved in the hot NH_3·H_2O solution, and the specific surface area and pore volume continuously decreased with the increase in NH_3 hydrothermal treatment time. Meanwhile, the transformation of framework Ti species into extraframework Ti species was detected by the spectroscopic methods. However, the extraframework Ti species were still in a highly dispersed state after the hydrothermal and thermal treatments as shown by TEM images, while the formation of new acid sites was not detected. Upon combining the results of characterization with catalytic performance of HTS, the main deactivation reason for this material had been determined, which might be attributed to the reduction of specific surface area and active centers after basic treatment and calcination of HTS samples. And then the possible mechanism of simulated deactivation of HTS zeolite was proposed, which could describe the elemental reaction steps much more visually and directly. 展开更多
关键词 deactivation hollow titanium silicate ammoximation extraframework Ti TEM
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Surface Passivation of Ti/4H-SiC Schottky Barrier Diode
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作者 Muhammad Khalid Saira Riaz Shahzad Naseem 《Communications in Theoretical Physics》 SCIE CAS CSCD 2012年第10期577-582,共6页
Surface properties of SiC power devices mostly depend on the passivation layer(PL).This layer has direct influence on electrical characteristics of devices.2D numerical simulation of forward and reverse characteristic... Surface properties of SiC power devices mostly depend on the passivation layer(PL).This layer has direct influence on electrical characteristics of devices.2D numerical simulation of forward and reverse characteristics with and without different(PLs)(SiO2,HfO2 and Si3N4) has been performed.Simulation results show that the breakdown voltage increases with increasing PL thickness,and there is a lesser significant effect on forward characteristics.The maximum breakdown voltage with and without SiO2 PL is 1240 V and 276 V,respectively.SiO2 PL has compatibility with SiC surface providing high breakdown voltage,6 and 8% higher than that of HfO2 and Si3N4 respectively.Low leakage current is observed which then further decreases on reducing the thickness of PL.Furthermore,variation of forward current with dielectric constant and thickness of PLs was observed.Finally,it is suggested that matches of our results with published experimental results indicate that the Sentaurus TCAD simulator is a predictive tool for the SiC Schottky barrier diode simulation. 展开更多
关键词 PASSIVATION breakdown voltage leakage current electric field ON-RESISTANCE
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