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氮化镓单晶衬底制备技术发展与展望 被引量:4
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作者 姜元希 刘南柳 +2 位作者 张法碧 王琦 张国义 《人工晶体学报》 EI CAS 北大核心 2020年第11期2038-2045,共8页
氮化镓(GaN)是第三代半导体材料中的典型代表。因其良好的物理化学性能与热稳定特性,是制作光电子器件及电力电子器件的理想材料。采用同质外延技术在GaN单晶衬底上制备GaN基器件是实现其高性能的根本途径。本文综述了GaN单晶衬底制备... 氮化镓(GaN)是第三代半导体材料中的典型代表。因其良好的物理化学性能与热稳定特性,是制作光电子器件及电力电子器件的理想材料。采用同质外延技术在GaN单晶衬底上制备GaN基器件是实现其高性能的根本途径。本文综述了GaN单晶衬底制备的氢化物气相外延技术、三卤化物气相外延技术、氨热法及助熔剂法(钠流法)的研究进展,并对未来可能的发展方向提出了展望。 展开更多
关键词 氮化镓 单晶衬底 同质外延 氨热 钠流法
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F-doped O3-NaNi_(1/3)Fe_(1/3)Mn_(1/3)O_2 as high-performance cathode materials for sodium-ion batteries 被引量:5
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作者 Qin Zhang Yangyang Huang +6 位作者 Yi Liu Shixiong Sun Kun Wang Yuyu Li Xiang Li Jiantao Han Yunhui Huang 《Science China Materials》 SCIE EI CSCD 2017年第7期629-636,共8页
The F-doped O3-type NaNi1/3Fe1/3Mn1/3O2-xFx (x = 0, 0.005, 0.01,002 and noted as NFM-F0, NFM-F0.005, NFM-F0.01, NFM-F0.02, respectively, united as NFM-Fs) cathode materials were investigated systematically. The rate... The F-doped O3-type NaNi1/3Fe1/3Mn1/3O2-xFx (x = 0, 0.005, 0.01,002 and noted as NFM-F0, NFM-F0.005, NFM-F0.01, NFM-F0.02, respectively, united as NFM-Fs) cathode materials were investigated systematically. The rate performance and capacity retention of the O3-type cathode materials are significantly improved as a function of specific F-doping levels. Optimum performance is achieved in the NFM-F0.01 material having a capacity of -110mAhg-1 at a current density of 150mAg-1 after 70 cycles. The results indicate that the binding energy of oxygen changes as a result of F-doping, and in addition, F-doping results in changes to the stoichiometry of Mn3+/Mn4+, which stabilizes the O3-type layered structure, thus allowing cycling performance to be improved. However, NFM-F0.02, having a higher F-doping level, retains a high capacity retention, although a slight loss is observed. The results suggest there is an optimum F-doping level for the NFM-F system to deliver enhanced cycling performance. 展开更多
关键词 O3-type NaNi1/3Fe1/3Mn1/3O2 F-doping sodium-ionbatteries
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