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Ta/Al合金薄膜TCR的方差分析
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作者 贾宇明 杨邦朝 《电子科技大学学报》 EI CAS CSCD 北大核心 1997年第4期398-401,共4页
在用直流共溅射法制备Ta/Al合金电阻薄膜的工艺中,研究了主要工艺参数,例如靶基距、气压、溅射电压和热处理时间等对薄膜电阻温度系数(TCR)的影响。采用方差分析和正交试验方法获取薄膜的最佳工艺条件和TCR值。结果表明... 在用直流共溅射法制备Ta/Al合金电阻薄膜的工艺中,研究了主要工艺参数,例如靶基距、气压、溅射电压和热处理时间等对薄膜电阻温度系数(TCR)的影响。采用方差分析和正交试验方法获取薄膜的最佳工艺条件和TCR值。结果表明只要适当选取和很好控制四种主要工艺参数就可以制出TCR性能优良的Ta/Al合金薄膜,同时证实了方差分析法行之有效。 展开更多
关键词 方差分析 合金薄膜 溅射 钽/铝 TCR
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Electrochemical behavior of tantalum in ethylene carbonate and aluminum chloride solvate ionic liquid 被引量:5
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作者 Ai-min LIU Meng-xia GUO +8 位作者 Zi-yang LÜ Bao-guo ZHANG Feng-guo LIU Wen-ju TAO You-jian YANG Xian-wei HU Zhao-wen WANG Yu-bao LIU Zhong-ning SHI 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2020年第8期2283-2292,共10页
To investigate the electrochemical reduction mechanism of Ta(Ⅴ)in ethylene carbonate and aluminum chloride(EC-AlCl3)solvate ionic liquid,cyclic voltammetry experiments were conducted on a tungsten working electrode.F... To investigate the electrochemical reduction mechanism of Ta(Ⅴ)in ethylene carbonate and aluminum chloride(EC-AlCl3)solvate ionic liquid,cyclic voltammetry experiments were conducted on a tungsten working electrode.Four reduction peaks were observed in the cyclic voltammogram of the EC-AlCl3-TaCl5 ionic liquid.The reduction peaks at-0.55,-0.72,and-1.12 V(vs Al)were related to the reduction of Ta(Ⅴ)to tantalum metal by three stages including the formation of Ta(Ⅳ)and Ta(Ⅲ)complex ions.The reduction of Ta(Ⅲ)to tantalum metal was an irreversible diffusion-controlled reaction with a diffusion coefficient of 3.7×10^-7 cm^2/s at 323 K,and the diffusion activation energy was 77 k J/mol.Moreover,the cathode products at 323 K were characterized by scanning electron microscopy,energy-dispersive spectroscopy,and X-ray photoelectron spectroscopy.The results showed that tantalum metal and tantalum oxides were obtained by potentiostatic electrodeposition at-0.8 V for 2 h. 展开更多
关键词 electrochemical behavior ionic liquid cyclic voltammetry aluminum chloride TANTALUM
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Electronic Structure ofTiAl-2M(M=V,Nb,Ta,Cr,Mo,W,Mn) Alloy
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作者 HUANG Zun-Xing LI Jun-Qian +2 位作者 WU Li-Ming ZHANG Yong-Fan ZHOU Li-Xin(Department of Chemistry, Fuzhou University, Fuzhou, 350002)(State Key Laboratory of Structural Chemistry, Fuzhou, Fujian, 350002)TIAN An-Min(Department Of Chemistry, Sichuan University, C 《Chinese Journal of Structural Chemistry》 SCIE CAS CSCD 1998年第1期74-79,共6页
The electronic structures of TiAl-2M(M=V, Nb, Ta, Cr, Mo, W,Mn) alloy have been investigated using EHT band calculation method. Their bandstructures and average prperties have been obtained. The results show that dopi... The electronic structures of TiAl-2M(M=V, Nb, Ta, Cr, Mo, W,Mn) alloy have been investigated using EHT band calculation method. Their bandstructures and average prperties have been obtained. The results show that doping thetransition metal elements can effectively change the band structure and enable the alloysystem to show the stronger metallic feature. The dopants of V, Cr and Mn increase s-orbital component of Ti and Al in bonding orbital, therefore, there is more sphericalelectronic clound and weakly directional bonds in the crystal, which improve the duictil-ity of the alloy, Nb or Ta makes stronger bonding with Ti and Al, which improvestrength and oxidation resistance of the alloy. 展开更多
关键词 electronic structure TiAl alloy band structure EHT method
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钽硅团簇电子输运性质的第一性原理研究 被引量:2
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作者 郑新亮 郑继明 +3 位作者 任兆玉 郭平 田进寿 白晋涛 《物理学报》 SCIE EI CAS CSCD 北大核心 2009年第8期5709-5715,共7页
利用基于密度泛函理论和非平衡格林函数的第一性原理方法,对位于两段半无限长铝导线之间的TaSi3团簇的电子输运性质进行了研究.研究表明:该团簇分子投影自洽哈密顿量的8态和9态决定着系统在小偏压下的输运特性.TaSi3团簇的平衡态电导对... 利用基于密度泛函理论和非平衡格林函数的第一性原理方法,对位于两段半无限长铝导线之间的TaSi3团簇的电子输运性质进行了研究.研究表明:该团簇分子投影自洽哈密顿量的8态和9态决定着系统在小偏压下的输运特性.TaSi3团簇的平衡态电导对团簇与电极间距离的变化十分敏感,当距离小于0.35nm时,平衡态电导随之剧烈的振荡;当距离大于0.35nm后,平衡态电导迅速减小.在-1—1V偏压下,团簇表现出一定的电压-电流非对称整流特性,在0.3—0.4V的偏压下,观察到了该团簇的负微分电导特性. 展开更多
关键词 /硅混合团簇/铝分子结 电子输运 密度泛函理论 非平衡格林函数
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