通过射频磁控溅射法和脉冲激光沉积法,以Ti-Al为阻挡层,在(001)Si衬底上制备了La0.5Sr0.5CoO_3(LSCO)/Na_(0.5)Bi_(0.5)TiO_3(NBT)/LSCO(LSCO/NBT/LSCO)异质结铁电电容器。研究了Na_(0.5)Bi_(0.5)TiO_3铁电薄膜的结构和物理性能。结果表...通过射频磁控溅射法和脉冲激光沉积法,以Ti-Al为阻挡层,在(001)Si衬底上制备了La0.5Sr0.5CoO_3(LSCO)/Na_(0.5)Bi_(0.5)TiO_3(NBT)/LSCO(LSCO/NBT/LSCO)异质结铁电电容器。研究了Na_(0.5)Bi_(0.5)TiO_3铁电薄膜的结构和物理性能。结果表明:Ti-Al阻挡层为非晶结构,NBT薄膜结晶质量良好。在1 500 k V/cm驱动电场下,LSCO/NBT/LSCO电容器呈现饱和的电滞回线,具有较大的剩余极化强度(47.9μC/cm2)和较小的脉宽依赖性,而且抗疲劳特性和保持特性良好。此外,漏电机制研究表明:当外加电场小于400 k V/cm时,LSCO/NBT/LSCO电容器满足欧姆导电机制,在电场大于400 k V/cm时,满足空间电荷限流传导机制。展开更多
Y2001-62591-61 01140430.18μm高性能嵌入式 DRAM 制造方法=A fabricationmethod for high performance embedded DRAM of 0. 18μm generation and beyond [会, 英]/Yoshida, T. &Takato, H.//2000 IEEE Custom Integrated Circui...Y2001-62591-61 01140430.18μm高性能嵌入式 DRAM 制造方法=A fabricationmethod for high performance embedded DRAM of 0. 18μm generation and beyond [会, 英]/Yoshida, T. &Takato, H.//2000 IEEE Custom Integrated CircuitsCorfference. —61~64 (EC)Y2001-62591-65 0114044具有备用铁电电容器的非易失性 SRAdVl=NV-SRAM:a nonvolatile SRAM with back-up Ferroelectric展开更多
文摘通过射频磁控溅射法和脉冲激光沉积法,以Ti-Al为阻挡层,在(001)Si衬底上制备了La0.5Sr0.5CoO_3(LSCO)/Na_(0.5)Bi_(0.5)TiO_3(NBT)/LSCO(LSCO/NBT/LSCO)异质结铁电电容器。研究了Na_(0.5)Bi_(0.5)TiO_3铁电薄膜的结构和物理性能。结果表明:Ti-Al阻挡层为非晶结构,NBT薄膜结晶质量良好。在1 500 k V/cm驱动电场下,LSCO/NBT/LSCO电容器呈现饱和的电滞回线,具有较大的剩余极化强度(47.9μC/cm2)和较小的脉宽依赖性,而且抗疲劳特性和保持特性良好。此外,漏电机制研究表明:当外加电场小于400 k V/cm时,LSCO/NBT/LSCO电容器满足欧姆导电机制,在电场大于400 k V/cm时,满足空间电荷限流传导机制。
文摘Y2001-62591-61 01140430.18μm高性能嵌入式 DRAM 制造方法=A fabricationmethod for high performance embedded DRAM of 0. 18μm generation and beyond [会, 英]/Yoshida, T. &Takato, H.//2000 IEEE Custom Integrated CircuitsCorfference. —61~64 (EC)Y2001-62591-65 0114044具有备用铁电电容器的非易失性 SRAdVl=NV-SRAM:a nonvolatile SRAM with back-up Ferroelectric