期刊文献+
共找到6篇文章
< 1 >
每页显示 20 50 100
钛酸钡铁电单晶压痕诱发微裂纹形成与90°铁电畴变
1
作者 方菲 杨卫 《硅酸盐学报》 EI CAS CSCD 北大核心 2003年第12期1140-1144,共5页
用偏光显微镜和扫描电子显微镜观察研究了不同取向BaTiO3铁电单晶在Vickers压痕作用下微裂纹与90。铁电畴变的形态。发现对于[001]取向极化的BaTiO3铁电单晶,压痕诱发短裂纹不仅发生在沿着压痕对角线方向,而且由于相邻等价畴变区界面的... 用偏光显微镜和扫描电子显微镜观察研究了不同取向BaTiO3铁电单晶在Vickers压痕作用下微裂纹与90。铁电畴变的形态。发现对于[001]取向极化的BaTiO3铁电单晶,压痕诱发短裂纹不仅发生在沿着压痕对角线方向,而且由于相邻等价畴变区界面的结构错配,还发生在与压痕对角线成45°的方向。对于[100]取向的BaTiO3铁电单晶,在偏离水平方向(垂直于极化方向)约15°~20°角出现了对偶长裂纹。如果将压痕的对角线从极化方向旋转45°,则压痕诱发的裂纹长度大大缩短。认为由于结构错配的影响,裂纹倾向于沿着两畴变区的界面或沿着已畴变区和未畴变区的界面形成。 展开更多
关键词 钛酸钡 铁电单晶 极化 铁电畴变
下载PDF
湿度对恒电场下BaTiO_3单晶中畴变的影响 被引量:1
2
作者 姜冰 白洋 +2 位作者 褚武扬 宿彦京 乔利杰 《金属学报》 SCIE EI CAS CSCD 北大核心 2008年第9期1090-1094,共5页
通过偏振光显微镜观察了在恒电场作用下湿空气对BaTiO_3单晶畴变的影响.结果表明,在恒电场下,湿度对不同的畴结构有不同的影响.较低的湿度对a-b和b-c畴结构没有影响.而在较高的湿度下,随着放置时间的增加,b-c畴结构发生了变化,b畴逐渐向... 通过偏振光显微镜观察了在恒电场作用下湿空气对BaTiO_3单晶畴变的影响.结果表明,在恒电场下,湿度对不同的畴结构有不同的影响.较低的湿度对a-b和b-c畴结构没有影响.而在较高的湿度下,随着放置时间的增加,b-c畴结构发生了变化,b畴逐渐向c畴转变;但是较高的湿度对a-b畴结构无影响.可用水分子在a(b)畴和c畴上的吸附差别解释上述现象. 展开更多
关键词 铁电畴变 湿度 BaTiO3单晶 恒电场
下载PDF
In-situ Raman observation on crack tips of Vickers indent in PLZT ceramics 被引量:2
3
作者 张飒 程璇 张颍 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2011年第10期2259-2263,共5页
Vickers indentation was introduced into the originally in-plane and out-of-plane poled PLZT ceramics.The Raman spectra were in-situ recorded at selected crack tips before and after the indentations,as well as after th... Vickers indentation was introduced into the originally in-plane and out-of-plane poled PLZT ceramics.The Raman spectra were in-situ recorded at selected crack tips before and after the indentations,as well as after the applications of external electric field.The results show that the changes in Raman intensities of optical modes could be sensitively related to 90° domain switching around the crack tips which are strongly dependent on the directions of original polarization and geometric locations.When the direction of electric field was perpendicular to the direction of original polarization,the 90° domain switching at crack tips of the Vickers indentation on the originally in-plane poled PLZT ceramics caused most significant change in the Raman intensity,which inhibited the crack growth.However,when the direction of electric field was parallel to the direction of original polarization,the growth of crack tips became predominantly without the 90° domain switching,which led to the crack growth. 展开更多
关键词 ferroelectric ceramics domain switching in-situ Raman spectroscopy Vickers indentation
下载PDF
Large and Recoverable Electrostrain in Strained Ferroelectric Superlattices due to Domain Switching
4
作者 JIANG Zhexin WANG Jie 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2021年第1期75-83,共9页
The ferroelectric superlattices have been widely studied due to their distinguished electromechanical coupling properties.Under different biaxial mismatch strains,ferroelectric superlattices exhibit different domain s... The ferroelectric superlattices have been widely studied due to their distinguished electromechanical coupling properties.Under different biaxial mismatch strains,ferroelectric superlattices exhibit different domain structures and electromechanical coupling properties.A three-dimensional phase field model is employed to investigate the detailed domain evolution and electromechanical properties of the PbTiO_(3)/SrTiO_(3)(PTO/STO)superlattices with different biaxial mismatch strains.The phase field simulations show that the ferroelectric superlattice exhibits large electrostrain in the stacking direction when an external field is applied.Under a large compressive mismatch strain,vortex domains appear in ferroelectric layers with the thickness of 4 nm.The vortex domains become stable cdomain under a large external electric field,which remains when the electric field is removed.When the initial compressive mismatch strain decreases gradually,the waved or a1/a2 domains replaces the initial vortex domains in the absence of electric field.The fully polarized c-domain by a large electric field switches to diagonal direction domain or a/c domain when the electric field is small.Furthermore,when a biaxial tensile strain is applied to the superlattice,ferroelectric domains switch back to the initial a1/a2 twin-like domain structure,resulting in the recoverable and large electrostrain.This provides an effective way to obtain the large and recoverable electrostrain for the engineering application. 展开更多
关键词 large electrostrain ferroelectric superlattices domain switching recoverable domains
下载PDF
外场作用下BaTiO_3单晶裂纹扩展和畴变 被引量:3
5
作者 姜冰 邢献然 郭志猛 《金属学报》 SCIE EI CAS CSCD 北大核心 2011年第5期605-610,共6页
通过偏振光显微镜对连续应力和恒电场作用下的BaTiO_3单晶中的裂纹扩展和畴变过程进行原位观察.结果表明.在连续应力的作用下,裂尖处应力集中导致出现畴变带,裂纹与畴变带垂直相交,畴带和裂纹一起向前移动,畴变在先,裂纹扩展在后;在恒... 通过偏振光显微镜对连续应力和恒电场作用下的BaTiO_3单晶中的裂纹扩展和畴变过程进行原位观察.结果表明.在连续应力的作用下,裂尖处应力集中导致出现畴变带,裂纹与畴变带垂直相交,畴带和裂纹一起向前移动,畴变在先,裂纹扩展在后;在恒电场作用下,畴变引起的不协调应变导致电致裂纹扩展,畴变始终发生在裂纹扩展之前.裂纹向前扩展时不断的切过前方的畴带,直到不再有畴变发生时裂纹停止扩展. 展开更多
关键词 铁电畴变 裂纹扩展 原位观察 BaTiO_3单晶
原文传递
Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films
6
作者 Yu Feng Can Wang +6 位作者 ShiLu Tian Yong Zhou Chen Ge HaiZhong Guo Meng He KuiJuan Jin GuoZhen Yang 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2017年第6期69-73,共5页
BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain ... BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer. 展开更多
关键词 BFO buffer layer strain
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部