Ba_(0.7)Sr_(0.3)TiO_3铁电薄膜的弥散相变特征及有序微畴

Ba0.7Sr0.3TiO3铁电薄膜的介电温谱呈现弥散相变的特征，相对介电常数与温度呈现平方关系．TEM观察表明，10nm量级微畴随机分布在晶粒中,选区电子衍射（SAED）揭示微畴区存在1／2｛201｝超点阵，Ba2+、Sr2+离子层在[001]方向的交替排列可以描述该超点阵.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

Study of Depolarization Field Influence on Ferroelectric Films Within Transverse Ising Model

An improved transverse Ising model is proposed by taking the depolarization field effect into account. Within the framework of mean-held theory we investigate the behavior of the ferroelectric thin film. Our results show that the influence of the depolarization field is to flatten the spontaneous polarization profile and make the films more homogeneous, which is consistent with Ginzburg Landau theory. This fact shows that this model can be taken as an effective model to deal with the ferroelectric film and can be further extended to refer to quantum effect. The competition between quantum effect and depolarization field induces some interesting phenomena on ferroelectric thin films.

Preparation and Characterization of Nano-Particles PZT Ferroelectric Thin Films by RF-Magnetron Sputtering

Pt/Ti bottom electrodes were fabricated on SiO2/Si substrates by magnetron dual-facingtarget sputtering system. Lead zirconate titanate（PZT） thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency （RF） magnetron sputtering system. The thickness of PZT thin films which were deposited for 5 h was about 800 nm. XRD spectra show that PZT thin films deposited in Ar ambience and rapid-thermal-annealed for 20 min at 700 ℃ have good crystallization behavior and perovskite structure. AFM micrographs show that mean diameter of crystallites is 70 nm and surface structures of PZT thin films are uniform and dense. Raw mean, root mean square roughness and mean roughness of PZT thin films are 34..357 rim, 2. 479 nm and 1. 954 nm respectively. As test frequency is 1 kHz, dielectric constant of PZT thin films is 327.5. Electric hysteresis loop shows that coercive field strength, residual polarization strength and spontaneous polarization strength of PZT thin films are 50 kV/cm, 10μC/cm^2 and 13μC/cm^2 respectively.

Influence of Poly（methyl metacrylate） Addition on Resistive Switching Performance of P3HT/P（VDF-TrFE） Blend Films

Organic semiconducting/ferroelectric blend films attracted much attention due to their electrical bistability and rectification properties and thereof the potential in resistive memory devices. Blend films were usually deposited from solution, during which phase separation oc- curred, resulting in discrete semiconducting phase whose electrical property was modulated by surrounding ferroelectric phase. However, phase separation resulted in rough surface and thus large leakage current. To further improve electrical properties of such blend films, poly（methyl metacrylate） （PMMA） was introduced as additive into P3HT/P（VDF-TrFE） semiconducting/ferroelectric blend films in this work. It indicated that small amount of PMMA addition could effectively enhance the electrical stability to both large electrical stress and electrical fatigue and further improve retention performance. Overmuch PMMA addition tended to result in the loss of resistive switching property. A model on the configuration of three components was also put forward to well understand our experimental observations.

Study of Defect-Layers Effect in Ferroelectric Thin Film with Transverse Ising Model

By taking into account the two-spin interaction in the transverse Ising model （TIM）, the influence of the defect layers （including JB and ΩB） on the polarization and Curie temperature are calculated numerically, within the framework of the decoupling approximation under Green＇s function. The numerical results show that the polarization and Curie temperature will both become large sensitively due to the large values of JB and the small value of ΩB of the defect layers. Meanwhile, the dependence of the crossover values of the exchange interaction JA, the transverse field ΩA of the bulk material on the exchange interaction JB and the transverse field ΩB of the defect layers are shown in 3-Dimensional （3-D） figures for the first time. Moreover, the transition features of the ferroelectric thin film with defect layers are presented.

Study of Phase Transition Properties in Epitaxial Ferroelectric Film

Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green＇s function, we study the phase transition properties of the epitaxial ferroeleetric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers for epitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoretical results are in reasonable accordance with experimental data of different ferroelectric thin film.

Effective Pyroelectric Coefficient and Polarization Offset of Compositionally Step-like Graded Ferroelectric Structures

In this paper, the effective pyroelectric coefficient and polarization offset of the compositionally step-like graded multilayer ferroelectric structures have been studied by use of the first-principles approach. It is exhibited that the dielectric gradient has a nontrivial influence on the effective pyroelectric coefficient, but has a little influence on the polarization offset; and the polarization gradient plays an important role in the abnormal hysteresis loop phenomenon of the co.mpositionally step-like graded ferroelectric structures. Moreover, the origin of the polarization offset is explored,which can be attributed to the polarization gradient in the compositionally step-like graded structure.

Fabrication and structure of Langmuir-Blodgett films of ferroelectric liquid crystal

The molecular aggregation, orientation, and structure in Langmuir-Blodgett films of ferroelectric liquid crystal were studied by ultraviolet and Fourier transform infrared spectra. The results show that medium strong (H-aggregates) in the Langmuir-Blodgett films of ferroelectric liquid crystal are formed by chromophores where the alkyl chains are nearly perpendicular to the film surface. Compared with the cast films, the CO stretching bands, due to the rotational isomerism around the O—C axis of the chiral part, can be identified clearly in Langmuir-Blodgett films.

Effects of annealing temperature on microstructure and ferroelectric properties of Bi_(0.5)(Na_(0.85)K_(0.15))_(0.5)TiO_3 thin films

Bi0.5(Na0.85K0.15)0.5TiO3(BNKT15) thin films were synthesized by metal-organic decomposition(MOD) at annealing temperatures of 650,680,710 and 740℃,and the effects of annealing temperature on the microstructure,dielectric properties,remnant polarization(2Pr) and leakage current density were studied with X-ray diffractometer,atomic force microscope,precision impedance analyzer,ferroelectric analysis station and semiconductor parameter tester.The results show that the thin film annealed at 710℃ exhibits a typical perovskite structure without predominant orientation and a smooth surface with evenly distributed grains.2Pr value(67.4 μC/cm2 under 830 kV/cm) and the leakage current density(1.6×10-6 A/cm2 at 170 kV/cm) for BNKT15 thin film annealed at 710℃ are better than those for thin films annealed at other temperatures.

Preparation and properties of SrBi_(2.2) Ta_2O_9 thin film

SrBi2.2 Ta2O9（SBT） thin film with thickness of 2μm was successfully prepared by sol-gel method, using strontium acetate semihydrate [Sr（CH3COO）2·1/2H2O] and bismth subnitrate [BiO（NO3）], and tantalum ethoxide [Ta（OCH2CH3）5] as source materials, glacial acetic and ethylene glycol as solvents. The X-ray diffraction（XRD） and transmission electron microscope（TEM） results indicate that SBT layer-perovskite phase obtained has to be single phase, SBT thin film is formed after being annealed at 800℃ for 1min. The typical hysteresis loop of SBT thin film on Pt/Ti/SiO2/Si is obtained, and the measured polarization value of the SBT thin film is 4.2μC/cm2.

Enhanced electrical properties in bilayered ferroelectric thin films

Sr2Bi4Ti5O18(SBTi) single layered and Sr2Bi4Ti5O18 /Pb(Zr0.53Ti0.47)O3(SBTi/PZT) bilayered thin films have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed-laser deposition(PLD).The related structural characterizations and electrical properties have been comparatively investigated.X-ray diffraction reveals that both films have crystallized into perovskite phases and scanning electron microscopy shows the sharp interfaces.Both films show well-saturated ferroelectric hysteresis loops,however,compared with the single layered SBTi films,the SBTi/PZT bilayered films have significantly increased remnant polarization(Pr) and decreased coercive field(Ec),with the applied field of 260 kV/cm.The measured Pr and Ec of SBTi and SBTi/PZT films were 7.9 C/cm 2,88.1 kV/cm and 13.0 C/cm 2,51.2 kV/cm,respectively.In addition,both films showed good fatigue-free characteristics,the switchable polarization decreased by 9% and 11% of the initial values after 2.2 10 9 switching cycles for the SBTi single layered films and the SBTi/PZT bilayered films,respectively.Our results may provide some guidelines for further optimization of multilayered ferroelectric thin films.

Ultrafast photoinduced strain in super-tetragonal PbTiO ferroelectric films

The ultrafast photoinduced strain(UPS)resulting from the coupling of piezoelectric and photovoltaic effects in ferroelectric has been focused in the last decade,endowing them with extensive applications including ultrafast optical memories,sensors and actuators with strain engineering.The mechanism of screening of the depolarization field by photoinduced carriers is generally accepted for UPS in ferroelectrics,while the thermal component of the strain is usually diluted as the offset and has not been systematically confronted,leading to unnecessary confusion.Herein,both the positive and negative thermal expansion effects in composite ferroelectric epitaxial films are investigated by use of high-repetition-rate ultrafast X-ray diffraction,along with the piezoelectric and photovoltaic effects.The coupling of the positive/negative thermal effects and the piezoelectric/photovoltaic effects in ultrafast strain is evidenced and can be regulated.The opposite lattice responses due to different thermal effects of the samples with different axial ratios are observed.The maximum UPS is up to 0.24%,comparable to that of conventional ferroelectric.The interaction between the thermal and ferroelectric effects in the induced strain could promote the diversified applications with the coupling of light,heat and electricity.

Tuning ferroelectricity of polymer blends for flexible electrical energy storage applications

Ferroelectric polymers are the mainstay of advanced flexible electronic devices.How to tailor the ferroelectric polymer films for various applications via simple processing approaches is challenging.Here we demonstrate the tuning of ferroelectric responses can be achieved in polymer blends of poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE))and polymethyl methacrylate(PMMA)prepared via a simple two-step process.The proposed two-step process endows the polymer blends with a random distribution of P(VDF-TrFE)crystalline phase,hence decoupling the coherent ferroelectric domain interactions between continuous ordered crystalline phases that ubiquitously existed in common P(VDF-TrFE)film.The incorporation of the miscible non-crystalline PMMA chains with low-polarity results in reversal dipoles and a transition from ferroelectric to antiferroelectric-like behavior,overcoming the trade-off between the polarization and depolarization fields.In particular,resultant excellent mechanical and electrical properties of the polymer blend films give rise to remarkably improved breakdown strength and energy storage performance,surpassing P(VDF-TrFE)and commercial biaxial-oriented polypropylene films.This work provides a simple and effective strategy to tailor the ferroelectric response of polymeric materials with great potential for flexible electrical energy storage applications.

Enhanced energy storage properties and temperature stability of fatigue-free La-modified PbZrO3 films under low electric fields

Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.

Epitaxial thin film of SmFeO_3 ferroelectric heterostructures

Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.

Effects of BaTiO3 and SrTiO3 as the buffer layers of epitaxial BiFeO3 thin films

BiFeO_3 (BFO) thin films with BaTiO_3 (BTO) or SrTiO_3 (STO) as buffer layer were epitaxially grown on SrRuO_3-covered SrTiO_3 substrates. X-ray diffraction measurements show that the BTO buffer causes tensile strain in the BFO films, whereas the STO buffer causes compressive strain. Different ferroelectric domain structures caused by these two strain statuses are revealed by piezoelectric force microscopy. Electrical and magnetical measurements show that the tensile-strained BFO/BTO samples have reduced leakage current and large ferroelectric polarization and magnetization, compared with compressively strained BFO/STO. These results demonstrate that the electrical and magnetical properties of BFO thin films can be artificially modified by using a buffer layer.