Multiferroic bi-layer Fe/BaTiO3 （BTO） thin films were successfully deposited on Pt（200）/MgO（100） substrates using ion beam sputter deposition （1BSD）, and the mutiferroic properties were studied at room tempera...Multiferroic bi-layer Fe/BaTiO3 （BTO） thin films were successfully deposited on Pt（200）/MgO（100） substrates using ion beam sputter deposition （1BSD）, and the mutiferroic properties were studied at room temperature. X-ray diffraction （XRD） analyses showed that BTO films were c-axis oriented and epitaxially grown on platinum coated MgO substrates, and （110） epitaxial Fe films were subsequently grown on （001） BTO films. Fe/BTO bi-layer films showed good ferroelectric and ferromagnetic properties at room temperature and the multiferroic coupling was observed, which should be attributed to the hybridization of Fe and Ti occurring at the ferromagnetic-ferroelectric interface.展开更多
Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green＇s function, we study the phase transition properties of the epitaxial ferroeleetric film with one substrate. A general re...Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green＇s function, we study the phase transition properties of the epitaxial ferroeleetric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers for epitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoretical results are in reasonable accordance with experimental data of different ferroelectric thin film.展开更多
Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of puls...Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.展开更多
基金Project supported by the Yeungnam University Research Grant in 2010Project (507111403888) supported by the National Science Foundation of China for International Communication and CooperationProject (50672034) supported by the National Natural Science Foundation of China
文摘Multiferroic bi-layer Fe/BaTiO3 （BTO） thin films were successfully deposited on Pt（200）/MgO（100） substrates using ion beam sputter deposition （1BSD）, and the mutiferroic properties were studied at room temperature. X-ray diffraction （XRD） analyses showed that BTO films were c-axis oriented and epitaxially grown on platinum coated MgO substrates, and （110） epitaxial Fe films were subsequently grown on （001） BTO films. Fe/BTO bi-layer films showed good ferroelectric and ferromagnetic properties at room temperature and the multiferroic coupling was observed, which should be attributed to the hybridization of Fe and Ti occurring at the ferromagnetic-ferroelectric interface.
基金Supported partly by SRF for ROCS,SEM under Grant No.20071108
文摘Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green＇s function, we study the phase transition properties of the epitaxial ferroeleetric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers for epitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoretical results are in reasonable accordance with experimental data of different ferroelectric thin film.
基金supported by the National Key R&D Program of China(2018YFE0115500)the National Natural Science Foundation of China(61704159 and 51975541)+3 种基金Shanxi Province Science Foundation for Youths(201701D221125 and 201801D221199)Program for the Young Academic Leaders of the North University of China(QX201807)the Research Project Supported By Shanxi Scholarship Council of China(2019-066)Shanxi“1331 Project”Key Subject Construction(1331 KSC)。
文摘Electrostatic energy^-storage capacitors,with their ultrahigh storage density and high temperature stability,have been receiving increasing attention of late for their ability to meet the critical requirements of pulsed power devices in low^-consumption systems.In such a context,this work reports on the successful production of anti^-ferroelectric(AFE)thin films with excellent energy storage performance under a relatively low electric field.In particular,La^-doped Pb Zr O3 thin films were fabricated using a sol^-gel method,yielding a recoverable energy storage density of 34.87 J cm^-3 with an efficiency of 59.23%at room temperature under the electric field of^800 k V cm^-1.The temperature dependence of the energy storage property was demonstrated from room temperature to 210°C,indicating a stable density variation between 34.87 and 27.98 J cm^-3.The films also exhibited excellent anti^-fatigue property(endurance of up to 3×10^9cycles and the recoverable energy storage density varied from 39.78 to 29.32 J cm^-3 combined with an efficiency of 61.03%–44.95%under the test frequencies from 10 to 5000 Hz).All results were obtained using compact films with a high polarization(Pmax)of approximately 103.7μC cm^-2 and low remnant polarization(Pr^7μC cm^-2),which was owing to the combination of La Ni O3 buffer layers and vacancies at Pb sites.These results illustrate the great potential of pulsed power devices in low^-consumption systems operating in a wide range of temperatures and long^-term operations.
