怎么使用的一些信息在原处决定了 Cuto 的散开系数在极端大规模集成(ULSI ) 做 Cu 敷金属法的障碍层被提供。在在低温度的公司的 Cu 的散开系数决心分析 Cu 移植到 Cosurface 层。散开深度用 X 光检查光电子被分析在不同温度在公司调查 ...怎么使用的一些信息在原处决定了 Cuto 的散开系数在极端大规模集成(ULSI ) 做 Cu 敷金属法的障碍层被提供。在在低温度的公司的 Cu 的散开系数决心分析 Cu 移植到 Cosurface 层。散开深度用 X 光检查光电子被分析在不同温度在公司调查 Cu 的散开效果的光谱学(XPS ) 深度侧面。障碍层的可能的预告的处理温度和时间能在公司根据 Cu 的散开系数被预言。展开更多
TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si syst...TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.展开更多
文摘怎么使用的一些信息在原处决定了 Cuto 的散开系数在极端大规模集成(ULSI ) 做 Cu 敷金属法的障碍层被提供。在在低温度的公司的 Cu 的散开系数决心分析 Cu 移植到 Cosurface 层。散开深度用 X 光检查光电子被分析在不同温度在公司调查 Cu 的散开效果的光谱学(XPS ) 深度侧面。障碍层的可能的预告的处理温度和时间能在公司根据 Cu 的散开系数被预言。
基金Project(60371046) supported by the National Natural Science Foundation of China
文摘TaNx nanoscale thin-films and Cu/TaNx multilayer structures were deposited on P-type Si(100) substrates by DC reactive magnetron sputtering. The characteristics of TaNx films and thermal stabilities of Cu/TaNx/Si systems annealed at various temperatures were studied by four-point probe(FPP) sheet resistance measurement, atomic force microscopy(AFM), scanning electron microscope-energy dispersive spectrum (SEM-EDS), Alpha-Step IQ Profilers and X-ray diffraction(XRD), respectively. The results show that the surfaces of deposited TaNx thin-films are smooth. With the increasing of N2 partial pressure, the deposition rate and root-mean-square(RMS) decrease, while the content of N and sheet resistance of the TaNx thin-films increase, and the diffusion barrier properties of TaNx thin-films is improved. TaN1.09 can prevent interdiffusion between Cu and Si effectively after annealing up to 650 ℃ for 60 s. The failure of TaNx is mainly attributed to the formation of Cu3Si on TaN/Si interface, which results from Cu diffusion along the grain boundaries of polycrystalline TaN.
