制备条件对CuO/SiO_2催化剂铜晶相的影响

采用醇盐法制备了一系列不同铜负载量及含不同助剂的SiO2 负载的铜基催化剂。考察了不同制备条件对催化剂制备过程中硅酸凝胶生成速度的影响 ,发现在其它条件相同的情况下 ,正硅酸乙酯与乙二醇的体积比起主要作用 ,与金属铜盐的浓度基本无关。用XRD测试表明 ,本实验方法所制备的催化剂中的CuO是高度分散的非晶相状态 ,极易还原。高铜负载量的催化剂在 5 0 0℃ ,空气气氛中焙烧 4h后有Cu的晶相产生 ,其中含Fe、Ni助剂的有助于铜盐在分解过程中被还原为晶相铜 ,而Zn。

Effects of Cu addition on microstructure and mechanical properties of as-cast magnesium alloy ZK60

The effects of Cu addition on the microstructure and mechanical properties of the as-cast magnesium alloy ZK60 were investigated with optical microscope, SEM, TEM, XRD, EPMA and tensile tester. The mechanism by which the mechanical properties are affected by Cu addition was discussed. The results show that Cu can effectively eliminate the intragranular solute segregations in the alloy, and the grain size of the alloy is decreased considerably with increasing the Cu amount. A ternary eutectic phase MgZnCu with a face-centered cubic structure is identified in the Cu-bearing alloys, which predominantly distributes at the grain boundary and acts as the nucleation sites of microcracks during the plastic deformation process. It is also found that the tensile properties of the alloy firstly increase by the trace addition of 0.5%-1%Cu and then decrease by a further addition up to 2.0%.

Effect of temperature-induced phase transitions on bioleaching of chalcopyrite

The phase transformation of chalcopyrite and the effect of its phase status on bacterial leaching were studied. Under the protection of high-purity argon, different temperatures(203, 382 and 552℃) were applied to natural chalcopyrite to complete the phase change. In addition, the chalcopyrite was bioleached before and after the phase change. The results show that the chalcopyrite heated at 203 and 382℃ remained in the α phase, whereas the chalcopyrite changed from α to β phase at 552℃. The leaching rates of chalcopyrite after the phase transitions at 203, 382 and 552℃ were 32.9%, 40.5% and 60.95%, respectively. Further, the crystal lattice parameters of chalcopyrite increased and lattice energy decreased, which were the fundamental reasons for the significant increase in leaching rate. Electrochemical experiments demonstrated that with increasing annealing temperature, the polarization resistance decreased and corrosion current density increased. The higher the oxidation rate was, the higher the leaching rate was.

Effects of rare earth Ce addition on microstructure and mechanical properties of impure copper containing Pb

The effects of rare earth Ce on the microstructure and mechanical properties of impure copper containing Pb were investigated using OM,SEM,EPMA,TEM and tensile testing.TEM and EDS analysis reveal that spherical CePb3 particles form after Ce addition.CePb3 particles,with average size of^3.6μm,homogenously distribute in the Cu matrix.Due to small lattice misfit(~4.62%)with Cu matrix,CePb3 particles can act as effective nucleation sites beneficial to the grain refinement.Pb at grain boundaries seriously deteriorates the mechanical properties of Cu.The tensile strength and the elongation of Cu-0.1 Pb are decreased by 43.1%and 56.7%compared with those of pure copper,respectively.Ce can purify grain boundaries,cause the precipitation of CePb3 particles and refine grain sizes,which contribute to significant improvement of the mechanical properties of Cu.Compared with Cu-0.1Pb,the tensile strength(179 MPa)and the elongation(38.5%)of Cu-0.1Pb-0.3Ce are increased by 117.6%and 151.6%,respectively.

Chemical Vapor Deposition Mechanism of Copper Films on Silicon Substrates

A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.