A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a ...A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.展开更多
Developing highly efficient and stable water oxidation catalysts based on abundant metallic elements is a challenge that must be met to fulfill the promise of water splitting for clean energy production.In this work,w...Developing highly efficient and stable water oxidation catalysts based on abundant metallic elements is a challenge that must be met to fulfill the promise of water splitting for clean energy production.In this work,we developed an oxygen evolution reaction catalyst consisting of a nanostructured film electrodeposited from a phosphate buffer solution(0.2mol/L,pH=12.0)containing Cu‐tricine complex.A Tafel plot showed that the required overpotential for a current densityof1.0mA/cm2was only395mV and the Tafel slope was46.7mV/decade.In addition,the Cu‐tricine film maintained a stable current density of7.5mA/cm2for the oxygen evolution reaction in phosphate buffer solution for10h,and a Faradaic efficiency of99%was obtained.展开更多
基金ACKN0WLEDGMENT This work was supported by the National Natural Science Foundation of China （No.20576112）.
文摘A versatile metal-organic chemical vapor deposition （MOCVD） system was designed and constructed. Copper films were deposited on silicon （100） substrates by chemical vapor deposition （CVD） using Cu（hfac）2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu（hfac）2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode （island）, and then transforms to Stranski-Rastanov mode （layer-by-layer plus island）. The mechanism of Cu nucleation on silicon （100） substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu（hfac） formed by the thermal dissociation of Cu（hfac）2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu（hafc）2 and H2 occurs.
文摘Developing highly efficient and stable water oxidation catalysts based on abundant metallic elements is a challenge that must be met to fulfill the promise of water splitting for clean energy production.In this work,we developed an oxygen evolution reaction catalyst consisting of a nanostructured film electrodeposited from a phosphate buffer solution(0.2mol/L,pH=12.0)containing Cu‐tricine complex.A Tafel plot showed that the required overpotential for a current densityof1.0mA/cm2was only395mV and the Tafel slope was46.7mV/decade.In addition,the Cu‐tricine film maintained a stable current density of7.5mA/cm2for the oxygen evolution reaction in phosphate buffer solution for10h,and a Faradaic efficiency of99%was obtained.
