A facile route for preparation of gradient wettability surface on copper substrate with contact angle changing from 90.3°to4.2°was developed.The Cu（OH）2 nanoribbon arrays were electrochemically deposited o...A facile route for preparation of gradient wettability surface on copper substrate with contact angle changing from 90.3°to4.2°was developed.The Cu（OH）2 nanoribbon arrays were electrochemically deposited on copper foil via a modified anodization technology,and the growth degree and density of the Cu（OH）2 arrays may be controlled varying with position along the substrate by slowly adding aqueous solution of KOH into the two-electrode cell of an anodization system to form the gradient surface.The prepared surface was water resistant and thermal stable,which could keep its gradient wetting property after being immersed in water bath at 100℃ for 10 h.The results of scanning electron microscopy（SEM）,X-ray diffraction（XRD） and X-ray photoelectron spectroscopy（XPS） demonstrate that the distribution of Cu（OH）2 nanoribbon arrays on copper surface are responsible for the gradient wettability.展开更多
An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the hel...An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.展开更多
基金Project(S2012010010417)supported by the Guangdong Natural Science Foundation,ChinaProject(20130172110008)supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China
文摘A facile route for preparation of gradient wettability surface on copper substrate with contact angle changing from 90.3°to4.2°was developed.The Cu（OH）2 nanoribbon arrays were electrochemically deposited on copper foil via a modified anodization technology,and the growth degree and density of the Cu（OH）2 arrays may be controlled varying with position along the substrate by slowly adding aqueous solution of KOH into the two-electrode cell of an anodization system to form the gradient surface.The prepared surface was water resistant and thermal stable,which could keep its gradient wetting property after being immersed in water bath at 100℃ for 10 h.The results of scanning electron microscopy（SEM）,X-ray diffraction（XRD） and X-ray photoelectron spectroscopy（XPS） demonstrate that the distribution of Cu（OH）2 nanoribbon arrays on copper surface are responsible for the gradient wettability.
基金This work was supported by the National Basic Research Program of China （Nos. 2011CB707601, 2011CB707605, and 2012CB934102）, the National Science and Technology Supporting Program （No. 2012BAJ11B01）, the Creative Research of National Natural Science Foundation of China （No. 61021064）, and the National Natural Science Foundation of China （Nos. 60936001, 91123037 and 81201358）.
文摘An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires （α-SiNWs） is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.
