文章研究了在真空和热沉环境下,铝膜反射镜经质子辐照后的光学反射率变化.试验结果表明:60 kev质子辐照后,铝膜反射镜反射率发生了明显的变化.随辐照注量的增加,反射率呈单调减少趋势.当辐照注量达到1×1016 cm-2时,反射率略有下降...文章研究了在真空和热沉环境下,铝膜反射镜经质子辐照后的光学反射率变化.试验结果表明:60 kev质子辐照后,铝膜反射镜反射率发生了明显的变化.随辐照注量的增加,反射率呈单调减少趋势.当辐照注量达到1×1016 cm-2时,反射率略有下降,且这种变化首先发生在紫外区.随着辐照剂量进一步增加,反射率明显下降,特别是在波长为250～800 nm范围内.经表面形貌分析和机理分析,铝膜反射镜反射率的降低可归结为经质子辐照后铝镜面表面产生了波纹和小丘形貌.
abstract：
under the environment of vacuum and heat sink, the effects of the irradiation of protons with an energy of 60 kev on the optical specular reflectance of al reflector are studied. the experimental results show that the specular reflectance of the al film reflector is significantly affected by the irradiation. with increasing fluence, the specular reflectance decreases monotonously. at a low radiation fluence of 1×1016 cm-2, the specular reflectance is decreased but slightly, and the change firstly occurs in the ultraviolet region. with a further increase of fluence, a significant decrease of the specular reflectance occurs particularly in the wavelength range of 250～800 nm. the reason for the decrease could be attributed to the appearance of ripples and hillocks on the surface of the al mirror after the proton irradiation.展开更多
Wurtzite aluminum nitride（AlN） films were deposited on Si（100） wafers under various sputtering pressures by radio-frequency（RF） reactive magnetron sputtering. The film properties were investigated by XRD, SEM, A...Wurtzite aluminum nitride（AlN） films were deposited on Si（100） wafers under various sputtering pressures by radio-frequency（RF） reactive magnetron sputtering. The film properties were investigated by XRD, SEM, AFM, XPS and nanoindenter techniques. It is suggested from the XRD patterns that highly c-axis oriented films grow preferentially at low pressures and the growth of（100） planes are preferred at higher pressures. The SEM and AFM images both reveal that the deposition rate and the surface roughness decrease while the average grain size increases with increasing the sputtering pressure. XPS results show that lowering the sputtering pressure is a useful way to minimize the incorporation of oxygen atoms into the AlN films and hence a film with closer stoichiometric composition is obtained. From the measurement of nanomechanical properties of AlN thin films, the largest hardness and elastic modulus are obtained at 0.30 Pa.展开更多
文摘文章研究了在真空和热沉环境下,铝膜反射镜经质子辐照后的光学反射率变化.试验结果表明:60 kev质子辐照后,铝膜反射镜反射率发生了明显的变化.随辐照注量的增加,反射率呈单调减少趋势.当辐照注量达到1×1016 cm-2时,反射率略有下降,且这种变化首先发生在紫外区.随着辐照剂量进一步增加,反射率明显下降,特别是在波长为250～800 nm范围内.经表面形貌分析和机理分析,铝膜反射镜反射率的降低可归结为经质子辐照后铝镜面表面产生了波纹和小丘形貌.
abstract：
under the environment of vacuum and heat sink, the effects of the irradiation of protons with an energy of 60 kev on the optical specular reflectance of al reflector are studied. the experimental results show that the specular reflectance of the al film reflector is significantly affected by the irradiation. with increasing fluence, the specular reflectance decreases monotonously. at a low radiation fluence of 1×1016 cm-2, the specular reflectance is decreased but slightly, and the change firstly occurs in the ultraviolet region. with a further increase of fluence, a significant decrease of the specular reflectance occurs particularly in the wavelength range of 250～800 nm. the reason for the decrease could be attributed to the appearance of ripples and hillocks on the surface of the al mirror after the proton irradiation.
基金Project(21271188)supported by the National Natural Science Foundation of ChinaProject(2012M521541)supported by the China Postdoctoral Science Foundation+2 种基金Project(2012QNZT002)supported by the Fundamental Research Funds for the Central South Universities,ChinaProject(20110933K)supported by the State Key Laboratory of Powder Metallurgy,ChinaProject(CSU2012024)supported by the Open-End Fund for Valuable and Precision Instruments of Central South University,China
文摘Wurtzite aluminum nitride（AlN） films were deposited on Si（100） wafers under various sputtering pressures by radio-frequency（RF） reactive magnetron sputtering. The film properties were investigated by XRD, SEM, AFM, XPS and nanoindenter techniques. It is suggested from the XRD patterns that highly c-axis oriented films grow preferentially at low pressures and the growth of（100） planes are preferred at higher pressures. The SEM and AFM images both reveal that the deposition rate and the surface roughness decrease while the average grain size increases with increasing the sputtering pressure. XPS results show that lowering the sputtering pressure is a useful way to minimize the incorporation of oxygen atoms into the AlN films and hence a film with closer stoichiometric composition is obtained. From the measurement of nanomechanical properties of AlN thin films, the largest hardness and elastic modulus are obtained at 0.30 Pa.
