An electrochemical study on the redox behavior of indium in the eutectic LiCl-KCl system at 450 ℃ was carried out with the transient techniques of cyclic voltammetry and chronopotentiometry on an inert molybdenum ele...An electrochemical study on the redox behavior of indium in the eutectic LiCl-KCl system at 450 ℃ was carried out with the transient techniques of cyclic voltammetry and chronopotentiometry on an inert molybdenum electrode. The reduction of In(Ⅲ) was found to be a two-step process involving In(Ⅲ)/In(Ⅰ) and In(Ⅰ)/In couples at the potentials of about-0.4 and-0.8 V versus Ag/AgCl, respectively. The redox mechanism was further confirmed by the theoretical evaluation of the number of transferred electrons based on cyclic voltammetry and characterizations of the precipitates generated by the potentiostatic electrolysis. The diffusion coefficients of indium ions in the eutectic LiCl-KCl melt at 450 ℃ were estimated by cyclic voltammetry and chronopotentiometry. The results obtained through the two methods are in fair agreement, delivering an average diffusion coefficient of approximately 1.8×10^(-5)cm^(2)/s for In(Ⅲ), and 1.4×10^(-4)cm^(2)/s for In(Ⅰ).展开更多
The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In Ga...The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In GaA s,but also raises the N levels below the CBM of In GaA s,leading to the variation of the impurity-host interaction.The blueshift of the band gap energy is relative to the variation of the impurity-host interaction.In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters,a model is developed.It is found that the model can describe the blueshift of the band gap energy well.In addition,it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters.展开更多
Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydrid...Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.展开更多
Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the f...Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.展开更多
基金the National Natural Science Foundation of China(Nos.51904003,U1703130,51704011)the China Postdoctoral Science Foundation(No.2019M651466)the Foundation of Anhui Province Key Laboratory of Metallurgical Engineering&Resources Recycling of China(Nos.SKF18-01,SKF19-05).
文摘An electrochemical study on the redox behavior of indium in the eutectic LiCl-KCl system at 450 ℃ was carried out with the transient techniques of cyclic voltammetry and chronopotentiometry on an inert molybdenum electrode. The reduction of In(Ⅲ) was found to be a two-step process involving In(Ⅲ)/In(Ⅰ) and In(Ⅰ)/In couples at the potentials of about-0.4 and-0.8 V versus Ag/AgCl, respectively. The redox mechanism was further confirmed by the theoretical evaluation of the number of transferred electrons based on cyclic voltammetry and characterizations of the precipitates generated by the potentiostatic electrolysis. The diffusion coefficients of indium ions in the eutectic LiCl-KCl melt at 450 ℃ were estimated by cyclic voltammetry and chronopotentiometry. The results obtained through the two methods are in fair agreement, delivering an average diffusion coefficient of approximately 1.8×10^(-5)cm^(2)/s for In(Ⅲ), and 1.4×10^(-4)cm^(2)/s for In(Ⅰ).
基金Supported by the National Natural Science Foundation of China under Grant No.61504094Tinjin Research Program of Application Foundation and Advanced Technology under No.15JCYBJC16300Tianjin City High School Science and Technology Fund Planning Project No.20120609
文摘The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In GaA s,but also raises the N levels below the CBM of In GaA s,leading to the variation of the impurity-host interaction.The blueshift of the band gap energy is relative to the variation of the impurity-host interaction.In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters,a model is developed.It is found that the model can describe the blueshift of the band gap energy well.In addition,it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters.
文摘Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.
文摘Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.
