The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal a...The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal atoms to form active centers on ferroelectric material In_(2)Se_(3).During the polariza-tion switching process,the difference in surface electrostatic potential leads to a redistribution of electronic states.This affects the interaction strength between the adsorbed small molecules and the catalyst substrate,thereby altering the reaction barrier.In addition,the surface states must be considered to prevent the adsorption of other small molecules(such as *O,*OH,and *H).Further-more,the V@↓-In_(2)Se_(3) possesses excellent catalytic properties,high electrochemical and thermody-namic stability,which facilitates the catalytic process.Machine learning also helps us further ex-plore the underlying mechanisms.The systematic investigation provides novel insights into the design and application of two-dimensional switchable ferroelectric catalysts for various chemical processes.展开更多
Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized i...Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.展开更多
An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The...An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.展开更多
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current...In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.展开更多
文摘The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal atoms to form active centers on ferroelectric material In_(2)Se_(3).During the polariza-tion switching process,the difference in surface electrostatic potential leads to a redistribution of electronic states.This affects the interaction strength between the adsorbed small molecules and the catalyst substrate,thereby altering the reaction barrier.In addition,the surface states must be considered to prevent the adsorption of other small molecules(such as *O,*OH,and *H).Further-more,the V@↓-In_(2)Se_(3) possesses excellent catalytic properties,high electrochemical and thermody-namic stability,which facilitates the catalytic process.Machine learning also helps us further ex-plore the underlying mechanisms.The systematic investigation provides novel insights into the design and application of two-dimensional switchable ferroelectric catalysts for various chemical processes.
文摘Contacting mode atomic force microscopy (AFM) is used to measure the In 0.35 Ga 0.65 As/GaAs epilayer grown at low temperature (460℃).Unlike the normal layer by layer growth (FvdM mode) or self organized islands growth (SK mode),samples grown under 460℃ are found to be large islands with atomic thick terraces.AFM measurements reveale near one monolayer high steps.This kind of growth is good between FvdM and SK growth modes and can be used to understand the evolution of strained epitaxy from FvdM to SK mode.
基金supported by the National Natural Science Foundation of China(No.61274063)
文摘An organic light-emitting diode （OLED） device with high efficiency and brightness is fabricated by inserting CuOJCu dual inorganic buffer layers between indium-tin-oxide （ITO） and hole-transport layer （HTL）. The CuOx/Cu buffer layer limits the operating current density obviously, while the brightness and efficiency are both enhanced greatly. The highest brightness of the optimized device is achieved to be 14 000 cd/m2 at current efficiency of 3 cd/A and bias voltage of 15 V, which is about 50% higher than that of the compared device without CuOJCu buffer layer. The highest efficiency is achieved to be 5.9 cd/A at 11.6 V with 3 400 cd/m^2, which is almost twice as high as that of the compared device.
基金supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 8251063101000007, 10151063101000009 and 9451063101002082)the Scientific & Technological Plan of Guangdong Province (Grant Nos. 2008B010200004, 2010B010600030 and 2009B011100003)+2 种基金the National Natural Science Foundation of China(Grant Nos. 61078046 and 10904042)the Key Project of Chinese Ministryof Education (Grant No. 210157)the Scientific & Technological Project of Education Department of Hubei Province (Grant No. D20101104)
文摘In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.
