O462.3 98010580激光驱动光阴极高亮度电子束源以及新型光阴极的研究=Laser—drived photodiode electronicsource with high brightness and research onnew photodiodes[刊,中]/耿荣礼,宋进虎,于进(北京大学重离子物理研究所.北京(100...O462.3 98010580激光驱动光阴极高亮度电子束源以及新型光阴极的研究=Laser—drived photodiode electronicsource with high brightness and research onnew photodiodes[刊,中]/耿荣礼,宋进虎,于进(北京大学重离子物理研究所.北京(100871))//高能材料与核物理.—1997,21(1).—67—74介绍了北京大学激光驱动光阴极高亮度电子束源,给出了物理设计。该装置采用激光照射光阴极,通过100 kV直流加速结构,产生35—100ps的高亮度电子束。给出了新型离子注入型光阴极和碲化铯光阴极的实验结果。展开更多
A GaAs/GaAlAs transmission photocathode surface topography is examined with a scanning electron microscope(SEM) in the secondary emission mode.The contributions of photocathode surface topography to mean transverse en...A GaAs/GaAlAs transmission photocathode surface topography is examined with a scanning electron microscope(SEM) in the secondary emission mode.The contributions of photocathode surface topography to mean transverse energy of electrons emitted from the photocathode are calculated. Measurement is made of the variation of mean transverse emission energy with activating time during the course of activation. It is shown that the scattering of the photoelectrons in the Cs/O layer is the primary cause of the unexpectant high values of the mean transverse energy of electrons emitted from GaAs/GaAlAs photocathode. A method is proposed for the reduction of the mean transverse energy of electrons emitted from the photocathode.展开更多
文摘O462.3 98010580激光驱动光阴极高亮度电子束源以及新型光阴极的研究=Laser—drived photodiode electronicsource with high brightness and research onnew photodiodes[刊,中]/耿荣礼,宋进虎,于进(北京大学重离子物理研究所.北京(100871))//高能材料与核物理.—1997,21(1).—67—74介绍了北京大学激光驱动光阴极高亮度电子束源,给出了物理设计。该装置采用激光照射光阴极,通过100 kV直流加速结构,产生35—100ps的高亮度电子束。给出了新型离子注入型光阴极和碲化铯光阴极的实验结果。
文摘A GaAs/GaAlAs transmission photocathode surface topography is examined with a scanning electron microscope(SEM) in the secondary emission mode.The contributions of photocathode surface topography to mean transverse energy of electrons emitted from the photocathode are calculated. Measurement is made of the variation of mean transverse emission energy with activating time during the course of activation. It is shown that the scattering of the photoelectrons in the Cs/O layer is the primary cause of the unexpectant high values of the mean transverse energy of electrons emitted from GaAs/GaAlAs photocathode. A method is proposed for the reduction of the mean transverse energy of electrons emitted from the photocathode.
