A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a res...A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.展开更多
基金This work has been supported in part by National Nature ScienceFoundation of China (No. 6052130298 and 60432020)863 Project(No.2006AA01Z261)+1 种基金973 Project (No.2006CB302805)ProjectiCHIP financed by Italian Ministry of Foreign Affairs.
文摘A scheme for all-optical NOR logic gate is proposed based on injection-locking effect in a semiconductor laser. In this scheme, signal light injection into the laser will cause frequency shift of laser modes, as a result, the probe light into the laser can be switched between injection-locked and unlocked status, and its output power will be modulated. Theoretical analysis for this scheme is carried out by using a model to describe the dynamics of the injection-locked laser. By numerical simulation, the influence of laser bias current, laser length, injected signal power and signal frequency on the output performance of NOR logic gate is quantitatively analyzed.
