Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studie...Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studies the crystal structure, optical and electrical properties and preparation methods of ZAO films, and discusses the existing problems and application prospective of ZAO films.展开更多
Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） proc...Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.展开更多
We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties o...We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.展开更多
基金Funded by the foundation for key projects in 2000 of the Science and Technology Committee of Chongqing China (No.2000-6214).
文摘Owing to both of its high carrier concentration and large band gap, ZnO:Al (ZAO) films which is an n-type degenerate semiconductor, exhibits low resistance and high transmittance in the visible range. This work studies the crystal structure, optical and electrical properties and preparation methods of ZAO films, and discusses the existing problems and application prospective of ZAO films.
基金supported by the Yeungnam University Research Grants in 2009
文摘Multilayer gallium and aluminum doped ZnO （GZO/AZO） films were fabricated by alternative deposition of Ga-doped zinc oxide（GZO） and Al-doped zinc oxide（AZO） thin film by using pulsed laser deposition（PLD） process. The electrical and optical properties of these GZO/AZO thin films were investigated and compared with those of GZO and AZO thin films. The GZO/AZO （1：1） thin film deposited at 400 ~C shows the electrical resistivity of 4.18 x 10 4 ~.cm, an electron concentration of 7.5 x 1020/cm3, and carrier mobility of 25.4 cm2/（V.s）. The optical transmittances of GZO/AZO thin films are over 85%. The optical band gap energy of GZO/AZO thin films linearly decreases with increasing the AI ratio.
基金supported by the National Natural Science Foundation of China (Grant No.50972007)the Beijing Municipal Natural Science Foundation (Grant No.4092035)+3 种基金the State Key Program for Basic Research of the Ministry of Science and Technology of China (Grant No.2011CB932703)the Special Items Fund of Beijing Municipal Commission of Educationthe Opened Fund of State Key Laboratory on Integrated Optoelectronicsthe National Science Fund for Distinguished Young Scholars (Grant No.60825407)
文摘We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering.Optical and structural properties of the thin films were characterized using various techniques.At 6 V bias,a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained,and this responsibility dropped quickly and reached the noise floor in the visible region.Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.
