Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed f...Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall.展开更多
Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, ...Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.展开更多
文摘Advantages of the detached phenomena have influenced researchers to modify the conventional methods to promote it on the earth. Since 1994, the vertical directional solidification （VDS） technique has been employed for the growth of bulk crystals, without the seed, without contact to the ampoule wall, without coating and without external pressure. An automated furnace was designed and fabricated for the controlled temperature gradients, growth conditions and parameters. The typical ingots growths of GaSb have shown the gap of 20 μm-145 μm and mobility μn = 1125 cm^2/V.sec at 300 K. Mobility is highest and five times larger than the attached growths. Dislocation density is the order of 104/cm2 in the conical region, decreases in the direction of growth, and in many crystals reached less than 103/cm2. The spontaneous gap formation due to the meniscus depends on the pressure differences and thermal state. GaSb grown ingots have shown progress in the properties of crystal grown ever, and attributed to reduce thermal stress without contact to the ampoule wall.
文摘Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.
