锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角...锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。展开更多
GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold v...GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.展开更多
This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. Wit...This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.展开更多
Ab initio study of the equilibrium structure, spectroscopy constants, and anharmonic force field for several isotopomers of germanium dichloride （70GeCl2, 72GECl2, and 76GeCl2） have been carried out at the MP2 and C...Ab initio study of the equilibrium structure, spectroscopy constants, and anharmonic force field for several isotopomers of germanium dichloride （70GeCl2, 72GECl2, and 76GeCl2） have been carried out at the MP2 and CCSD（T） levels of theory using cc-pVTZ basis set. The cal- culated geometries, rotational constants, vibration-rotation interaction constants, harmonic frequencies, anharmonic constants, quartic and sextic centrifugal distortion constants, cubic and quartic force constants are compared with experimental data. For small mass differences of the Ge isotopes, the isotopic effects for germanium dichloride are much weaker. The agreements are satisfactory for these two methods, but the deviations of CCSD（T） results are slightly larger than that of MP2, because of CCSD（T）＇s inadequate treatment of electron correlation in hypervalent Cl atom.展开更多
The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray di...The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray diffraction. The crystal is triclinic, space group P-1 with parameters: a=9.7753(5), b=11.5773(5), c=13.5059(6) ?, α=104.185(1),β= 95.971(1), γ =96.727(1)°, V=1457.63(12) ?3, Z=2, Mr=574.13, Dc=1.308 g/cm3, λ=0.71073 ?, μ = 1.139mm-1, and F(000)=596. The structure was solved by direct methods. The structure was refined to R=0.0257, wR=0.0705 for 5080 observed reflections with I >2σ(I).The result of structure analysis indicates that atom Ge is sp3 hydridized because the arrangement of the four carbon atoms bonded to it is a distorted tetrahedron. The geometry of the three phenyl groups linking with the Ge atom looks like a propeller form.展开更多
Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium...Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium-based functional materials. In this work, size-selected anion photoelectron spectroscopy and theoretical calculations were used to explore the structural evolution and electronic properties of Au2Gen^-/0 (n=1-8) clusters. It is found that the two Au atoms in Au2Gen^-/0 (n=1-8) showed high coordination numbers and weak aurophilic interactions. The global minima of Au2Gen- anions and Au2Gen neutrals are in spin doublet and singlet states, respectively. Au2Gen- anions and Au2Gen neutrals showed similar structural features, except for Au2Ge4^-/0 and Au2Ge5^-/0. The C2v symmetric V-shaped structure is observed for Au2Ge1^-/0, while Au2Ge2^-/0 has a C2v symmetric dibridged structure. Au2Ge3^-/0 can be viewed as the two Au atoms attached to different Ge-Ge bonds of Ge3 triangle. Au2Ge4- has two Au atoms edge-capping Ge4 tetrahedron, while Au2Ge4 neutral adopts a C2v symmetric double Au atoms face-capping Ge4 rhombus. Au2Ge5-8^-/0 show triangular, tetragonal, and pentagonal prism-based geometries. Au2Ge6 adopts a C2v symmetric tetragonal prism structure and exhibits σ plus π double bonding characters.展开更多
In the present article, we study the electrical resistivity ρ, the thermoelectric power （TEP） α, thermal conductivity σ, Knight-Shifts and temperature coefficient of the Knight-Shifts of the liquid Si and Ge usin...In the present article, we study the electrical resistivity ρ, the thermoelectric power （TEP） α, thermal conductivity σ, Knight-Shifts and temperature coefficient of the Knight-Shifts of the liquid Si and Ge using the well known model potential for the first time. The structure factor used in the present work is derived from the Percus-Yevick （PY） theory. Various local field correction functions are used to study the screening influence. The present results of resistivity are found in qualitative agreement with available experimental and theoretical whenever exists.展开更多
Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate...Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.展开更多
文摘锗是重要的红外光学材料,为减小锗表面的菲涅耳反射损耗,提高光利用率,研究了锗基底圆锥形微结构的减反射性能。基于时域有限差分法(Finite Difference Time Domain),并采用单因素法研究了微结构的占空比、周期、高度等结构参数与入射角在8~12μm长波红外波段对反射率的影响,确定了微结构在低反射情况下较优的结构参数组合,其在整个波段范围内的平均反射率低于1%,远低于平板锗结构的35.47%,在9~11μm的波段范围内反射率低于0.5%,且光波在40°范围内入射时,圆锥形微结构的平均反射率仍然较低。将优化的圆锥形微结构与平板结构进行了对比,从等效折射率、反射场分布和能量吸收分布3方面进一步证实了圆锥形微结构在整个波段范围内优异的减反射性能。
文摘GeSi source/drain structure is purposefully adopted in SOI p MOSFET's to suppress the short channel effect (SCE).The impact of GeSi material (as source only,drain only or both source and drain) on the threshold voltage rolling off and DIBL effect is thoroughly investigated,as well as the influence of the Ge concentration and silicon film thickness.The Ge concentration should be carefully chosen as a tradeoff between the driving current and SCE improvement.The detailed physics is explained.
基金The National High Technology Research and Development Program of China(863 Program)(No.2006AA01Z284)
文摘This paper discusses the design of a 10 Gb/s laser diode driver implemented in SiGe BiCMOS technology. The laser diode driver is composed of an input buffer, a predriver circuit and an output current switch stage. With the current mode logic （CML） structure, the input buffer and the predriver circuit have the capability of transmission and amplification of high speed data. By employing MOS-HBT cascode structure as the output stage, the laser diode driver exhibits very high speed and efficiency working at the 10 Gb/s data rate. The core circuit is operated under a 3. 3 V supply, while the output stage is operated under 5.5 V for sufficient headroom across the laser diode. The chip occupies a die area of 600 μm × 800μm. Measurements on chip show clear electrical eye diagrams over 10 Gb/s, which can well meet the specifications defined by SDH STM64/SONET OC192 and a 10 Gb/s Ethemet eye mask. Under a 5. 5 V supply voltage, the maximum output swing is 3.0 V with a 50 12 load （the corresponding modulation current is 60 mA）, and the total power dissipation is 660 mW.
文摘Ab initio study of the equilibrium structure, spectroscopy constants, and anharmonic force field for several isotopomers of germanium dichloride （70GeCl2, 72GECl2, and 76GeCl2） have been carried out at the MP2 and CCSD（T） levels of theory using cc-pVTZ basis set. The cal- culated geometries, rotational constants, vibration-rotation interaction constants, harmonic frequencies, anharmonic constants, quartic and sextic centrifugal distortion constants, cubic and quartic force constants are compared with experimental data. For small mass differences of the Ge isotopes, the isotopic effects for germanium dichloride are much weaker. The agreements are satisfactory for these two methods, but the deviations of CCSD（T） results are slightly larger than that of MP2, because of CCSD（T）＇s inadequate treatment of electron correlation in hypervalent Cl atom.
文摘The title compound (C30H32NO4PGe), O,O-dimethyl-N-(β-triphenylgermanyl) propionyl-α-aminobenzylphosphonates was synthesized by a convenient method, and its crystal structure was determined by single-crystal X-ray diffraction. The crystal is triclinic, space group P-1 with parameters: a=9.7753(5), b=11.5773(5), c=13.5059(6) ?, α=104.185(1),β= 95.971(1), γ =96.727(1)°, V=1457.63(12) ?3, Z=2, Mr=574.13, Dc=1.308 g/cm3, λ=0.71073 ?, μ = 1.139mm-1, and F(000)=596. The structure was solved by direct methods. The structure was refined to R=0.0257, wR=0.0705 for 5080 observed reflections with I >2σ(I).The result of structure analysis indicates that atom Ge is sp3 hydridized because the arrangement of the four carbon atoms bonded to it is a distorted tetrahedron. The geometry of the three phenyl groups linking with the Ge atom looks like a propeller form.
基金supported by the National Natural Science Foundation of China (No.21273246 and No.21103202)the Chinese Academy of Sciences (No.QYZDB-SSW-SLH024)+3 种基金the Natural Science Foundation of Shandong Province of China (No.ZR2018BB040)Open Funds of Beijing National Laboratory for Molecular Sciences (No.BNLMS201804)Research Start-up Funds (Doctoral Science Foundation) of Heze University (No.XY18BS02)Chinese Academy of Sciences President’s International Fellowship Initiative (PIFI) (No.2018VMA0011)
文摘Investigating the structures and properties of Au-Ge mixed clusters can give insight into the microscopic mechanisms in gold-catalyzed Ge films and can also provide valuable information for the production of germanium-based functional materials. In this work, size-selected anion photoelectron spectroscopy and theoretical calculations were used to explore the structural evolution and electronic properties of Au2Gen^-/0 (n=1-8) clusters. It is found that the two Au atoms in Au2Gen^-/0 (n=1-8) showed high coordination numbers and weak aurophilic interactions. The global minima of Au2Gen- anions and Au2Gen neutrals are in spin doublet and singlet states, respectively. Au2Gen- anions and Au2Gen neutrals showed similar structural features, except for Au2Ge4^-/0 and Au2Ge5^-/0. The C2v symmetric V-shaped structure is observed for Au2Ge1^-/0, while Au2Ge2^-/0 has a C2v symmetric dibridged structure. Au2Ge3^-/0 can be viewed as the two Au atoms attached to different Ge-Ge bonds of Ge3 triangle. Au2Ge4- has two Au atoms edge-capping Ge4 tetrahedron, while Au2Ge4 neutral adopts a C2v symmetric double Au atoms face-capping Ge4 rhombus. Au2Ge5-8^-/0 show triangular, tetragonal, and pentagonal prism-based geometries. Au2Ge6 adopts a C2v symmetric tetragonal prism structure and exhibits σ plus π double bonding characters.
文摘In the present article, we study the electrical resistivity ρ, the thermoelectric power （TEP） α, thermal conductivity σ, Knight-Shifts and temperature coefficient of the Knight-Shifts of the liquid Si and Ge using the well known model potential for the first time. The structure factor used in the present work is derived from the Percus-Yevick （PY） theory. Various local field correction functions are used to study the screening influence. The present results of resistivity are found in qualitative agreement with available experimental and theoretical whenever exists.
文摘Organic germanium compounds have been extensively applied in medicine as tonics,In this paper,the local structures of two organic germanium compounds,carboxyethylgermanium sesquioxide and polymeric germanium glutamate,were determined by EXAFS.The structure parameters including coordination numbers and bond lengths were reported,and possible structure patterns were discussed.
