燃煤流化床床料的密度、错位密度和颗粒形貌研究

在两种燃煤颗粒和一种循环流化床锅炉冷渣颗粒形貌测量的基础上，提出了颗粒错位密度的概念，建立了颗粒外接六面体体积充满度与错位密度之间的关系。测量结果显示，采用错位密度处理颗粒形貌数据时，原本分散的测量数据表现出明显的线性化效果。对于实验中的两种煤，将颗粒密度当作常数处理对错位密度几乎没有影响。而对于循环流化床锅炉的冷渣，将颗粒密度当作常数，造成较大偏差。

High density dislocations enhance creep ageing response and mechanical properties in 2195 alloy sheet

The creep strain of conventionally treated 2195 alloy is very low,increasing the difficulty of manufacturing Al-Cu-Li alloy sheet parts by creep age forming.Therefore,finding a solution to improve the creep formability of Al-Cu-Li alloy is vital.A thorough comparison of the effects of cryo-deformation and ambient temperature large pre-deformation(LPD)on the creep ageing response in the 2195 alloy sheet at 160℃with different stresses has been made.The evolution of dislocations and precipitates during creep ageing of LPD alloys are revealed by X-ray diffraction and transmission electron microscopy.High-quality 2195 alloy sheet largely pre-deformed by 80%without edge-cracking is obtained by cryo-rolling at liquid nitrogen temperature,while severe edge-cracking occurs during room temperature rolling.The creep formability and strength of the 2195 alloy are both enhanced by introducing pre-existing dislocations with a density over 1.4×10^(15)m^(−2).At 160℃and 150 MPa,creep strain and creep-aged strength generally increases by 4−6 times and 30−50 MPa in the LPD sample,respectively,compared to conventional T3 alloy counterpart.The elongation of creep-aged LPD sample is low but remains relevant for application.The high-density dislocations,though existing in the form of dislocation tangles,promote the formation of refined T1 precipitates with a uniform dispersion.

Effect of Mo and ZrO_(2)nanoparticles addition on interfacial properties and shear strength of Sn58Bi/Cu solder joint

The influence of Mo and ZrO_(2)nanoparticles addition on the interfacial properties and shear strength of Sn58Bi solder joint was investigated.The interfacial microstructures of Sn58Bi/Cu,Sn58Bi+Mo/Cu and Sn58Bi+ZrO_(2)/Cu solder joints were analysed using a scanning electron microscope(SEM)coupled with energy dispersive X-ray(EDX)and the X-ray diffraction(XRD).Intermetallic compounds(IMCs)of MoSn_(2)are detected in the Sn58Bi+Mo/Cu solder joint,while SnZr,Zr_(5)Sn_(3),ZrCu and ZrSn_(2)are detected in Sn58Bi+ZrO_(2)/Cu solder joint.IMC layers for both composite solders comprise of Cu_(6)Sn_(5) and Cu_(3)Sn.The SEM images of these layers were used to measure the IMC layer’s thickness.The average IMC layer’s thickness is 1.4431μm for Sn58Bi+Mo/Cu and 0.9112μm for Sn58Bi+ZrO_(2)/Cu solder joints.Shear strength of the solder joints was investigated via the single shear lap test method.The average maximum load and shear stress of the Sn58Bi+Mo/Cu and Sn58Bi+ZrO_(2)/Cu solder joints are increased by 33%and 69%,respectively,as compared to those of the Sn58Bi/Cu solder joint.By comparing both composite solder joints,the latter prevails better as adding smaller sized ZrO_(2)nanoparticles improves the interfacial properties granting a stronger solder joint.

Effect of thermal annealing on defects of upgraded metallurgical grade silicon

Effect of thermal annealing on the upgraded metallurgical grade（UMG）-Si was investigated under different conditions.The dislocation,grain boundaries and preferred growth orientation of Si ingot were characterized by optical microscopy,electron back scattering diffraction（EBSD） and X-ray diffractometry（XRD）,respectively.The arrange order of dislocation density of Si ingot is from the lowest in the middle to the lower in the bottom and low in the top before and after annealing.And it decreases gradually with increase of the annealing temperature.The number of small angle grain boundaries declines gradually until disappears whereas the proportion of coincidence site lattice（CSL） grain boundaries increases firstly and then decreases.The twin boundary Σ3 reaches the highest proportion of 28% after annealing at 1 200 ℃ for 3 h.Furthermore,the crystal grains in different positions gain the best preferred growth orientation,which can promote the following machining of Si ingot and the conversion efficiency of solar cells.

Interface,lattice strain and dislocation density of SiC_p/Al composite consolidated by equal channel angular pressing and torsion

Powder mixture of pure A1 and oxidized SiC was consolidated into 10% （mass fraction） SiCp/AI composites at 523 K by equal channel angular pressing and torsion （ECAP-T）. The interfacial bonding of the composites was characterized by transmission electron microscopy （TEM） and high resolution transmission electron microscopy （HRTEM）. The selected area electron diffraction （SAED） for the interface was investigated. The elements at the interface were scanned by energy dispersive spectroscopy （EDS） and the EDS mapping was also obtained. X-ray diffraction （XRD） analysis was carried out for the composites fabricated by 1 pass, 2 passes and 4 passes ECAP-T. According to the XRD analysis, the influences of ECAP-T pass on the Bragg angle and interplanar spacing for AI crystalline planes were studied. The results show that after ECAP-T, the interface between A1 and SiC within the composites is a belt of amorphous SiO2 containing a trace of A1, Si and C which diffused from the matrix and the reinforcement. With the growing ECAP-T pass, the Bragg angle decreases and interplanar spacing increases for A1 crystalline planes, due to the accumulated lattice strain. The increasing lattice strain of A1 grains also boosts the density of the dislocation within A1 grains.

Simulated and experimental investigation on discontinuous dynamic recrystallization of a near-α TA15 titanium alloy during isothermal hot compression in βsingle-phase field

A cellular automaton（CA） modeling of discontinuous dynamic recrystallization（DDRX） of a near-α Ti-6Al-2Zr-1Mo-1V（TA15） isothermally compressed in the β single phase field was presented.In the CA model,nucleation of the β-DDRX and the growth of recrystallized grains（re-grains） were considered and visibly simulated by the CA model.The driving force of re-grain growth was provided by dislocation density accumulating around the grain boundaries.To verify the CA model,the predicted flow stress by the CA model was compared with the experimental data.The comparison showed that the average relative errors were10.2%,10.1%and 6%,respectively,at 1.0,0.1 and 0.01 s^-1 of 1020 ℃,and were 10.2%,11.35%and 7.5%,respectively,at 1.0,0.1and 0.01 s^-1 of 1050 ℃.The CA model was further applied to predicting the average growth rate,average re-grain size and recrystallization kinetics.The simulated results showed that the average growth rate increases with the increasing strain rate or temperature,while the re-grain size increases with the decreasing strain rate;the volume fraction of recrystallization decreases with the increasing strain rate or decreasing temperature.

Effects of supersonic fine particles bombarding on thermal barrier coatings after isothermal oxidation

This work was attempted to modify the current technology for thermal barrier coatings（TBCs） by adding an additional step of surface modification,namely,supersonic fine particles bombarding（SFPB） process,on bond coat before applying the topcoat.After isothermal oxidation at 1000 °C for different time,the surface state of the bond coat and its phase transformation were investigated using X-ray diffraction（XRD）,scanning electron microscopy（SEM） equipped with energy-dispersive X-ray spectrometry（EDS）,transmission electron microscopy（TEM） and Cr3＋ luminescence spectroscopy.The dislocation density significantly increases after SFPB process,which can generate a large number of diffusion channels in the area of the surface of the bond coat.At the initial stage of isothermal oxidation,the diffusion velocity of Al in the bond coat significantly increases,leading to the formation of a layer of stable α-Al2O3 phase.A great number of Cr3＋ positive ions can diffuse via diffusion channels during the transient state of isothermal oxidation,which can lead to the presence of（Al0.9Cr0.1）2O3 phase and accelerate the γ→θ→α phase transformation.Cr3＋ luminescence spectroscopy measurement shows that the residual stress increases at the initial stage of isothermal oxidation and then decreases.The residual stress after isothermal oxidation for 310 h reduces to 0.63 GPa compared with 0.93 GPa after isothermal oxidation for 26 h.In order to prolong the lifespan of TBCs,a layer of continuous,dense and pure α-Al2O3 with high oxidation resistance at the interface between topcoat and bond coat can be obtained due to additional SFPB process.

Etch-Pits of GaN Films with Different Etching Methods

High quality GaN films on (0001) sapphire substrates were grown by a commercial MOCVD system (Thomas Swan Corp.).The etch pits and threading dislocations(TDs) in GaN films have been studied by chemical etching methods such as mixed acid solution (H 3PO 4∶H 2SO 4=1∶3) and molten KOH,HCl vapor etching method,scanning electron microscope (SEM) and transmission electron microscope(TEM).SEM images of the same position of GaN films with HCl vapor etching and wet etching methods show notably different densities and shapes of etching pits.The results indicate that HCl vapor etching can show pure edge,pure screw and mixed TDs,mixed acid solution can show pure screw and mixed TDs and molten KOH wet etching only can show pure screw TDs.

Dislocation density model and microstructure of 7A85 aluminum alloy during thermal deformation

The microstructure evolution of 7A85 aluminum alloy at the conditions of strain rate(0.001−1 s^(−1))and deformation temperature(250−450°C)was studied by optical microscopy(OM)and electron back scattering diffraction(EBSD).Based on the K-M dislocation density model,a two-stage K-M dislocation density model of 7A85 aluminum alloy was established.The results reveal that dynamic recovery(DRV)and dynamic recrystallization(DRX)are the main mechanisms of microstructure evolution during thermal deformation of 7A85 aluminum alloy.350−400°C is the transformation zone from dynamic recovery to dynamic recrystallization.At low temperature(≤350°C),DRV is the main mechanism,while DRX mostly occurs at high temperature(≥400°C).At this point,the sensitivity of microstructure evolution to temperature is relatively high.As the temperature increased,the average misorientation angle(θˉ_(c))increased significantly,ranging from 0.93°to 7.13°.Meanwhile,the f_(LAGBs) decreased with the highest decrease of 24%.

Mechanical properties and microstructure evolution of an Al-Cu-Li alloy subjected to rolling and aging

The mechanical properties and microstructure of Al-Cu-Li alloy sheets subjected to cryorolling(-100 ° C,-190 ℃) or hot rolling(400 ℃) and subsequent aging at 160 ℃ for different times were investigated. The dynamic precipitation and dislocation characterizations were examined via transmission electron microscopy and X-ray diffraction. The grain morphologies and the fracture-surface morphologies were studied via optical microscopy and scanning electron microscopy. Samples subjected to cryorolling followed by aging exhibited relatively high dislocation densities and a large number of precipitates compared with hot-rolled samples. The samples cryorolled at-190 ℃ and then aged for 15 h presented the highest ultimate tensile strength(586 MPa), while the alloy processed via hot rolling followed by 10 h aging exhibited the highest uniform elongation rate(11.5%). The size of precipitates increased with the aging time, which has significant effects on the interaction mechanism between dislocations and precipitates. Bowing is the main interaction method between the deformation-induced dislocations and coarsened precipitates during tensile tests, leading to the decline of the mechanical properties of the alloy during overaging. These interesting findings can provide significant insights into the development of materials possessing both excellent strength and high ductility.

Microstructure and thermal stability of sintered pure tungsten processed by multiple direction compression

Multiple direction compression(MDC)was conducted on sintered pure tungsten(99.9%,mass fraction)with different reductions at 1423 K.The microstructure,microhardness and thermal stability of the MDC-processed samples were studied by X-ray diffraction(XRD),electron backscattered diffraction(EBSD)and differential scanning calorimetry(DSC)compared with those of the initial sintered tungsten.The results show that the dislocation density increases significantly with the reduction of MDC,ranging from 3.08×1014 m-2 for the initial sintered tungsten to 8.08×1014 m-2 for the tungsten after MDC with the reduction of 50%.The average grain size decreases from 83.8 to 14.7μm and the microhardness value increases from HV0.2 417 to HV0.2 521.The recrystallization temperature for the tungsten samples processed by MDC is approximately constant at around 1600 K.The MDC of sintered tungsten results in a decrease of grain size concurrent with an increase of uniformly distributed nucleation sites,which leads to the improvement of the thermal stability.

Effects of non-isothermal annealing on microstructure and mechanical properties of severely deformed aluminum samples:Modeling and experiment

In order to investigate the evolution of microstructure and flow stress during non-isothermal annealing,aluminum samples were subjected to strain magnitudes of 1, 2 and 3 by performing 2, 4 and 6 passes of multi-directional forging. Then, the samples were non-isothermally annealed up to 150, 200, 250, 300 and 350 ℃. The evolution of dislocation density and flow stress was studied via modeling of deformation and annealing stages. It was found that 2, 4 and 6 passes multi-directionally forged samples show thermal stability up to temperatures of 250, 250 and 300 ℃, respectively. Modeling results and experimental data were compared and a reasonable agreement was observed. It was noticed that 2 and 4 passes multi-directionally forged samples annealed non-isothermally up to 350 ℃ have a lower experimental flow stress in comparison with the flow stress achieved from the model.The underlying reason is that the proposed non-isothermal annealing model is based only on the intragranular dislocation density evolution, which only takes into account recovery and recrystallization phenomena. However, at 350℃ grain growth takes place in addition to recovery and recrystallization,which is the source of discrepancy between the modeling and experimental flow stress.

Microstructure homogeneity regulation of 7050 aluminum forgings by surface cumulative plastic deformation

To regulate the microstructure homogeneity of large aluminum structural forgings for aircraft,the surface cumulative plastic deformation was proposed.The microstructure of 7050 aluminum forgings after the surface cumulative plastic deformation was investigated by electron backscatter diffraction(EBSD),transmission electron microscopy(TEM),and X-ray diffraction(XRD).The results showed that the microstructure evolution of 7050 aluminum forgings was more sensitive to the deformation temperature than the strain rate.The dislocation density continued to increase with the decrease of the deformation temperature and the increase of the strain rate.Dislocation density and stored energy were accumulated by the surface cumulative plastic deformation.Besides,a static recrystallization(SRX)model of 7050 aluminum forgings was established.The SRX volume fraction calculated by this model was in good agreement with the experimental results,which indicated that the model could accurately describe the SRX behavior of 7050 aluminum forgings during the surface cumulative plastic deformation.

Influence of Purity Degree on the Evolution the Mechanical Properties of Aluminium Commercial

The influence of the purity degree of the commercial aluminium on the mechanical properties： elastic stress, tensile strength, Brinell hardness, resilience and elongation at break was investigated. It was found that the first three resistance characteristics decrease with the growth of the purity of the material chosen to the detriment of two ductility characteristics that rise to the three states considered： crude of casting noted： F, Annealed noted： O, hardened noted ： H1/4. Furthermore, it is important to note that the hardened and the annealed lead respectively to a considerable hardening and a considerable softening. This hardening and this softening of the material in question can be respectively associated with the increase in dislocation density and immigration impurity elements of dislocations.

Advances of the Vertical Directional Solidification Technique for the Growth of High Quality InSb Bulk Crystals

Since 1994, the vertical directional solidification （VDS） technique is employed for the growths of bulk crystals-without the seed, without contact to the ampoule wall, without coating and without external pressure, which leads to the detached growth. Growth velocities ranged from 3 mm/h to 10 mm/h, and rotation rates 10-20 rpm have been used. Ingots, 10-20 mm diameter and 60-65 mm length, have been grown with the conical ampoule geometry and these ingots have shown symmetric detachment. Crystals grown under such conditions showed the relatively low dislocation density and the highest carrier mobility,/tn = 5.9 x 104 cm2＂Vl-sl than the crystal grown ever. For the detached crystals, the dislocation density is 104 cm＂2 in conical region, and reached less than 103 cm-2 in the direction of the growth, when the ingots are not in contact with the ampoule wall. Experiments for indium-antimonide （InSb） growth have shown that the 80% growth environments have detachment, 15% entrapped in conical region and 5% attached.

Elastic stress fields caused by a dislocation in Ge_xSi_(1-x)/Si film-substrate system

The elastic stress fields caused by a dislocation in GexSil~ epitaxial layer on Si substrate are investigated in this work. Based on the previous results in an anisotropic bimaterial system, the image method is further developed to determine the stress field of a dislocation in the film-substrate system under coupled condition. The film-substrate system is firstly transformed into a bimaterial system by distributing image dislocation densities on the position of the free surface. Then, the unknown image dis- location densities are solved by using boundary conditions, i.e., traction free conditions on the free surface. Numerical simula- tion focuses on the Ge0.1Si0.9/Si film-substrate system. The effects of layer thickness, position of the dislocation and crystallo- graphic orientation on the stress fields are discussed. Results reveal that both the stresses σxx,σxz at the free surface and the stress o-σx, σyy, σyz on the interface are influenced by the layer thickness, but the former is stronger. In contrast to the weak de- pendence of stress field on the crystallographic orientation the stress field was strongly affected by dislocation position. The stress fields both in the film-substrate system and bimaterial system are plotted.

Stress fields caused by a dislocation in an anisotropic 3-layer system

We investigated the stress fields caused by a dislocation in an anisotropic 3-layer system. Based on the image method, the original 3-layer system is firstly decomposed into three infinite homogenous systems. The image dislocation densities used as unknowns are then strategically distributed in order to satisfy the boundary conditions. The resulting governing equations are singular Cauchy integral ones. Removing the singular terms yields non-linear Fredhom integral equations of the second kind. The obtained stress fields satisfy the boundary conditions, i.e., the traction free condition on the free surface and continuous conditions across the interfaces. Also, a comparison with previous results is made and good agreement is achieved. Numerical investigations show that under the plain strain condition, layer thickness and dislocation position play stronger roles in the stress fields than crystallographic orientation, and these effects more significantly affect the stress fields caused by an edge dislocation than by a screw dislocation.

The effect of boron on the electronic structure of dislocation in NiAl

The segregation effect of B on the [100]（010） edge dislocation core in NiA1 single crystals is investigated using the DMol method and the discrete variational method within the framework of density functional theory. The impurity segregation en- ergy and the charge distribution are calculated. The effects of B on the dislocation motion are discussed. The results show that B prefers to segregate at the Center-Al dislocation core. Moreover, B forms strong bonding states with its neighboring host atoms, which may not be beneficial to the motion of the dislocation. Therefore, it can be expected that the strength of NiAl single crystals may be increased.