The evolution of morphology, composition, thickness and corrosion resistance of the oxide film on pure Sn solder substrate submitted to high-temperature aging in 150 °C dry atmosphere was investigated. The result...The evolution of morphology, composition, thickness and corrosion resistance of the oxide film on pure Sn solder substrate submitted to high-temperature aging in 150 °C dry atmosphere was investigated. The results indicate that high-temperature aging accelerates the dehydration of Sn(OH)_(4)in the pre-existing native oxide film to form SnO_(2)and facilitates the oxidation of fresh Sn substrate, resulting in the gradual increase in oxide film thickness and surface roughness with prolonging aging time. However, the corrosion resistance of the film initially is enhanced and then deteriorated with an extending aging time. Besides, the formation and evolution mechanisms of the oxide film with aging time were discussed.展开更多
Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin ...Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.展开更多
A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2...A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.展开更多
ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substr...ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.展开更多
Effective electron selective layer （ESL） is critical for the power conversion efficiency in organometal halide- based perovskite solar cells （PSCs）. In this work, a spincoating process has been developed to fabric...Effective electron selective layer （ESL） is critical for the power conversion efficiency in organometal halide- based perovskite solar cells （PSCs）. In this work, a spincoating process has been developed to fabricate high quality nanocrystalline SnO2 film at 100℃ without further sintering at higher temperature. When used as ESL in PSCs, such SnO2 film shows greater electron extraction ability and higher efficiency than TiO2 film processed under similar condition, as evidenced by the efficient time-resolved photoluminescence （TRPL） quenching SnO2/CH3NH3PbI3 film. As a resuit, the SnO2-based PSCs possess higher open circuit voltage of 0.91 V, short circuit current density of 20.73 mA cm^-2, and fill factor of 64.25%, corresponding to a conversion efficiency of 12.10%, compared with 7.16% of TiO2-based PSCs. This demonstrates the great potential of applying spin-coating sintering-free process for the low-cost and large-scale manufacturing of PSCs.展开更多
Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the f...Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.展开更多
Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ...Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.展开更多
基金financial support from CAS Key Laboratory of Nuclear Materials and Safety Assessment, Institute of Metal Research, Chinese Academy of Sciences。
文摘The evolution of morphology, composition, thickness and corrosion resistance of the oxide film on pure Sn solder substrate submitted to high-temperature aging in 150 °C dry atmosphere was investigated. The results indicate that high-temperature aging accelerates the dehydration of Sn(OH)_(4)in the pre-existing native oxide film to form SnO_(2)and facilitates the oxidation of fresh Sn substrate, resulting in the gradual increase in oxide film thickness and surface roughness with prolonging aging time. However, the corrosion resistance of the film initially is enhanced and then deteriorated with an extending aging time. Besides, the formation and evolution mechanisms of the oxide film with aging time were discussed.
基金Supported by the National Natural Science Foundation of China （10776014） Nanjing University of Science and Technology （NUST） Research Funding
文摘Microbial cellulose （MC） membranes produced by Acetobacter xylinum NUST4.1,were used as flexible substrates for the fabrication of transparent indium tin oxide （ITO） electrodes.Transparent and conductive ITO thin films were deposited on MC membrane at room temperature using radio frequency （RF） magnetron sputtering.The optimum ITO deposition conditions were achieved by examining crystalline structure,surface morphology and op-toelectrical characteristics with X-ray diffraction （XRD）,scanning electron microscopy （SEM）,atomic force mi-croscopy （AFM）,and UV spectroscopy.The sheet resistance of the samples was measured with a four-point probe and the resistivity of the film was calculated.The results reveal that the preferred orientation of the deposited ITO crystals is strongly dependent upon with oxygen content （O2/Ar,volume ratio） in the sputtering chamber.And the ITO crystalline structure directly determines the conductivity of ITO-deposited films.High conductive [sheet resis-tance ～120 Ω·square-1 （Ω·sq-1）] and transparent （above 76%） ITO thin films （240 nm thick） were obtained with a moderate sputtering power （about 60 W） and with an oxygen flow rate of 0.25 ml·min-1 （sccm） during the deposi-tion.These results show that the ITO-MC electrodes can find their potential application in optoelectrical devices.
文摘A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.
基金Acknowledgement The authors would like to thank Dr. Q. Qiao and V. Swaminathan for providing AFM measurements. This work has been supported by National Science Foundation/EPSCoR Grant No. 0903804 and by the State of South Dakota. Also acknowledged are National Science Foundation Grant No.IIP-1248454, South Dakota Performance Improvement Funds, and SDSU Research Scholarship Support Fund.
文摘ITO （indium tin oxide） thin films were deposited onto glass substrates by RF （radio frequency） magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 ℃. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 ℃ substrate temperature in pure argon possessed optimum sheet resistance of 10 Ω/sq. The transmittance oflTO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.
基金supported by the National Key Research and Development Program of China(2016YFA0201001)National Natural Science Foundation of China(11627801,51102172)+3 种基金Science and Technology Plan of Shenzhen City(JCYJ20160331191436180)Natural Science Foundation for Outstanding Young Researcher in Hebei Province(E2016210093)the Key Program of Educational Commission of Hebei Province of China(ZD2016022)the Youth Top-notch Talents Supporting Plan of Hebei Province,Hebei Provincial Key Laboratory of Traffic Engineering materials and Hebei Key Discipline Construction Project
文摘Effective electron selective layer （ESL） is critical for the power conversion efficiency in organometal halide- based perovskite solar cells （PSCs）. In this work, a spincoating process has been developed to fabricate high quality nanocrystalline SnO2 film at 100℃ without further sintering at higher temperature. When used as ESL in PSCs, such SnO2 film shows greater electron extraction ability and higher efficiency than TiO2 film processed under similar condition, as evidenced by the efficient time-resolved photoluminescence （TRPL） quenching SnO2/CH3NH3PbI3 film. As a resuit, the SnO2-based PSCs possess higher open circuit voltage of 0.91 V, short circuit current density of 20.73 mA cm^-2, and fill factor of 64.25%, corresponding to a conversion efficiency of 12.10%, compared with 7.16% of TiO2-based PSCs. This demonstrates the great potential of applying spin-coating sintering-free process for the low-cost and large-scale manufacturing of PSCs.
文摘Niobium-doped indium tin oxide （ITO：Nb） thin films are fabricated on glass substrates by radio frequency （RF） magnetron sputtering at different temperatures. Structural, electrical and optical properties of the films are investigated using X-ray diffraction （XRD）, atomic force microscopy （AFM）, ultraviolet-visible （UV-VIS） spectroscopy and electrical measurements. XRD patterns show that the preferential orientation ofpolycrystalline structure changes from （400） to （222） crystal plane, and the crystallite size increases with the increase of substrate temperature. AFM analyses reveal that the film is very smooth at low temperature. The root mean square （RMS） roughness and the average roughness are 2.16 nm and 1.64 nm, respectively. The obtained lowest resistivity of the films is 1.2 × 10^4 Ω-cm, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 16.5 cmVV.s and 1.88× 10^21 cm^-3, respectively. Band gap energy of the films depends on substrate temperature, which is varied from 3.49 eV to 3.63 eV.
基金supported by the National Natural Science Foundation of China (50990060)
文摘Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.
