The removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon （MG-Si）, also called Si-recrystallization ...The removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon （MG-Si）, also called Si-recrystallization from metal liquid, was a potential energy-saving method for the removal of B and P efficiently, since Si could be melted at lower temperature by alloying with metal. The selection criteria of metal-liquating system was elaborated, and Al, Sn and In were selected out as the optimum metallic mediums. For Sn-Si system, the segregation coefficient of B decreased to 0.038 at 1 500 K, which was much less than 0.8 at the melting point of Si. The mass fraction of B was diminished from 15×10^-6 to 0.1×10^-6 as MG-Si was purified by twice, while that of most metallic elements could be decreased to 0.1×10^-6 by purifying just once. During the metal-liquating process, the formation of compounds between impurity elements and Si was also an important route of impurity removal. Finally, one low-temperature metallurgical process based on metal-liquating method was proposed.展开更多
Tin nanoparticles with different size distribution were synthesized using chemical reduction method by applying NaBH4 as reduction agent.The Sn nanoparticles smaller than 100 nm were less agglomerated and no obviously...Tin nanoparticles with different size distribution were synthesized using chemical reduction method by applying NaBH4 as reduction agent.The Sn nanoparticles smaller than 100 nm were less agglomerated and no obviously oxidized.The melting properties of these synthesized nanoparticles were studied by differential scanning calorimetry.The melting temperatures of Sn nanoparticles in diameter of 81,40,36 and 34 nm were 226.1,221.8,221.1 and 219.5？欲espectively.The size-dependent melting temperature and size-dependent latent heat of fusion have been observed.The size-dependent melting properties of tin nanoparticles in this study were also comparatively analyzed by employing different size-dependent theoretical melting models and the differences between these models were discussed.The results show that the experimental data are in accordance with the LSM model and SPI model,and the LSM model gives the better understanding for the melting property of the Sn nanoparticles.展开更多
In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO...In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.展开更多
基金Project (2009BAB49B04) supported by National Key Technologies R&D Program, China
文摘The removal of B and P consumes most of heat energy in Si metallurgical purification process for solar-grade Si. Metal-liquating purification of metallurgical grade silicon （MG-Si）, also called Si-recrystallization from metal liquid, was a potential energy-saving method for the removal of B and P efficiently, since Si could be melted at lower temperature by alloying with metal. The selection criteria of metal-liquating system was elaborated, and Al, Sn and In were selected out as the optimum metallic mediums. For Sn-Si system, the segregation coefficient of B decreased to 0.038 at 1 500 K, which was much less than 0.8 at the melting point of Si. The mass fraction of B was diminished from 15×10^-6 to 0.1×10^-6 as MG-Si was purified by twice, while that of most metallic elements could be decreased to 0.1×10^-6 by purifying just once. During the metal-liquating process, the formation of compounds between impurity elements and Si was also an important route of impurity removal. Finally, one low-temperature metallurgical process based on metal-liquating method was proposed.
基金Project(2006AA03Z339)supported by the National High-tech Research and Development Program of ChinaProject(50571057)supported by the National Natural Science Foundation of ChinaProject(08520740500)supported by Science and Technology Commission of Shanghai Municipality,China
文摘Tin nanoparticles with different size distribution were synthesized using chemical reduction method by applying NaBH4 as reduction agent.The Sn nanoparticles smaller than 100 nm were less agglomerated and no obviously oxidized.The melting properties of these synthesized nanoparticles were studied by differential scanning calorimetry.The melting temperatures of Sn nanoparticles in diameter of 81,40,36 and 34 nm were 226.1,221.8,221.1 and 219.5？欲espectively.The size-dependent melting temperature and size-dependent latent heat of fusion have been observed.The size-dependent melting properties of tin nanoparticles in this study were also comparatively analyzed by employing different size-dependent theoretical melting models and the differences between these models were discussed.The results show that the experimental data are in accordance with the LSM model and SPI model,and the LSM model gives the better understanding for the melting property of the Sn nanoparticles.
基金support from the Scientific Research Foundation for Young Talents of Fuzhou University (Grant No. 0041826483)Research Foundation for the Doctor of Guangdong Pharmaceutical University(Grant No. 2007YKX15)Research Foundation for the Excellent Yong Teacher of Guangdong Pharmaceutical University
文摘In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.
