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具有三维导电网络结构的锡纳米颗粒/石墨烯纳米片复合电极材料的储镁性能研究(英文) 被引量:2
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作者 张长欢 李念武 +3 位作者 姚胡蓉 刘琳 殷雅侠 郭玉国 《化学学报》 SCIE CAS CSCD 北大核心 2017年第2期206-211,共6页
镁二次电池具有安全性高、价格低廉等优点,是一种具有潜在应用前景的高能量密度电池体系.目前,镁二次电池的研究重点之一是寻找合适的电极材料.最近,我们通过水热和热处理相结合的方法成功制备了具有三维导电网络结构的锡纳米颗粒/石墨... 镁二次电池具有安全性高、价格低廉等优点,是一种具有潜在应用前景的高能量密度电池体系.目前,镁二次电池的研究重点之一是寻找合适的电极材料.最近,我们通过水热和热处理相结合的方法成功制备了具有三维导电网络结构的锡纳米颗粒/石墨烯纳米片复合电极材料.研究发现,在石墨烯的三维导电网络片层上,均匀分布了粒径小于100 nm的锡纳米颗粒.将锡纳米颗粒/石墨烯纳米片复合材料作为镁二次电池电极材料,当电流密度为15 mA·g^(-1)和300 mA·g^(-1)时,首次放电容量分别达到了545.4 mAh·g^(-1)和238.8 mAh·g^(-1),经过150圈后,容量保持率达到了93%,库伦效率为99%,表现出了较高的电化学活性.研究还发现,镁离子嵌入复合材料中形成镁锡合金,当镁离子脱出后,再次形成锡纳米颗粒/石墨烯纳米片复合电极材料,镁离子的脱出和嵌入具有很高的可逆性.这对未来研究设计高性能镁离子电极材料具有十分重要的意义. 展开更多
关键词 储镁材料 镁二次电池 纳米复合材料 三维导电网络 锡纳米颗粒 石墨烯纳米
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新型石墨化氮化碳/锡/氮掺杂碳复合物的制备及储钠性能 被引量:2
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作者 刘志刚 李家宝 +4 位作者 杨剑 马浩 王赪胤 郭鑫 汪国秀 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 2021年第2期633-642,共10页
钠离子电池锡负极因具有较高的理论容量(847 mA·h/g)、高电导率和合适的工作电位而备受关注.但锡基负极材料在循环过程中会发生巨大的结构变化,进而导致活性材料粉化失活和比容量的快速下降.本文成功制备了基于石墨氮化碳(g-C3N4)... 钠离子电池锡负极因具有较高的理论容量(847 mA·h/g)、高电导率和合适的工作电位而备受关注.但锡基负极材料在循环过程中会发生巨大的结构变化,进而导致活性材料粉化失活和比容量的快速下降.本文成功制备了基于石墨氮化碳(g-C3N4)、聚多巴胺衍生的氮掺杂碳(NC)和Sn纳米颗粒的复合物(g-C3N4/Sn/NC),其中Sn纳米颗粒包埋在石墨氮化碳和氮掺杂碳中.在此多层分级结构中,g-C3N4和NC的引入可以显著加速电子/离子的传输及电池反应动力学,从而有助于Sn和钠离子之间的合金化反应;此外,这种复合结构有助于保持电极材料的结构稳定性,进而可以获得优异的储钠性能.作为钠离子电池负极材料,g-C3N4/Sn/NC在0.5 A/g电流密度下经历100次循环,可逆容量可以达到450.7 mA·h/g;在1.0 A/g电流密度下,比容量为388.3 mA·h/g;此外,在1.0 A/g电流密度下,经过400次循环后其比容量依旧能达到363.3 mA·h/g. 展开更多
关键词 石墨氮化碳 锡纳米颗粒 氮掺杂碳 储钠负极 钠离子电池
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Size-dependent melting properties of Sn nanoparticles by chemical reduction synthesis 被引量:1
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作者 邹长东 高玉来 +1 位作者 杨斌 翟启杰 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2010年第2期248-253,共6页
Tin nanoparticles with different size distribution were synthesized using chemical reduction method by applying NaBH4 as reduction agent.The Sn nanoparticles smaller than 100 nm were less agglomerated and no obviously... Tin nanoparticles with different size distribution were synthesized using chemical reduction method by applying NaBH4 as reduction agent.The Sn nanoparticles smaller than 100 nm were less agglomerated and no obviously oxidized.The melting properties of these synthesized nanoparticles were studied by differential scanning calorimetry.The melting temperatures of Sn nanoparticles in diameter of 81,40,36 and 34 nm were 226.1,221.8,221.1 and 219.5?欲espectively.The size-dependent melting temperature and size-dependent latent heat of fusion have been observed.The size-dependent melting properties of tin nanoparticles in this study were also comparatively analyzed by employing different size-dependent theoretical melting models and the differences between these models were discussed.The results show that the experimental data are in accordance with the LSM model and SPI model,and the LSM model gives the better understanding for the melting property of the Sn nanoparticles. 展开更多
关键词 Sn nanopartiele chemical reduction MELTING size-dependent property
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Neck-controlled sensitivity study on nano-grain SnO_2 gas sensors
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作者 马勇 《Journal of Chongqing University》 CAS 2003年第1期38-40,共3页
The electrical potential inside a cylinder with a space charge layer is used to express the neck potential barrier of nano-SnO2 gas elements, and the neck-controlled sensitivity and the grain size effect are studied. ... The electrical potential inside a cylinder with a space charge layer is used to express the neck potential barrier of nano-SnO2 gas elements, and the neck-controlled sensitivity and the grain size effect are studied. It is shown that the sensing properties are influenced by the microstructural features, such as the grain size, the geometry and connectivity between grains, and that the neck controlled sensitivity alone is higher than the neck-grain controlled sensitivity and the difference between the neck controlled sensitivity and the neck-grain controlled sensitivity is large in the high sensitivity range for nano-SnO2 gas elements, which suggests a possible approach to the improvement of the sensitivity of a sensor by decreasing the number of necks of a nano-grain SnO2 gas element. 展开更多
关键词 gas sensors SNO2 sensitivity geometry effect
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