A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of ...A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.展开更多
The article improves the process of dielectric barrier discharge(DBD)activated anode bonding.The treated surface was characterized by the hydrophilic surface test.The results showed that the hydrophilic angle was sign...The article improves the process of dielectric barrier discharge(DBD)activated anode bonding.The treated surface was characterized by the hydrophilic surface test.The results showed that the hydrophilic angle was significantly reduced under nano-gap conditions and the optimal discharge voltage was 2 kV.Then,the anodic bonding and dielectric barrier discharge activated bonding were performed in comparison experiments,and the bonding strength was characterized by tensile failure test.The results showed that the bonding strength was higher under the nano-gap dielectric barrier discharge.This process completed 110°C ultra-low temperature anodic bonding and the bonding strength reached 2 MPa.Finally,the mechanism of promoting bonding after activation is also discussed.展开更多
文摘A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO 2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99 9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22 6% at the peak wavelength of 1 54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.
基金Project(6140863020216JW30001)supported by the General Armaments Department Pre-research Fund,China。
文摘The article improves the process of dielectric barrier discharge(DBD)activated anode bonding.The treated surface was characterized by the hydrophilic surface test.The results showed that the hydrophilic angle was significantly reduced under nano-gap conditions and the optimal discharge voltage was 2 kV.Then,the anodic bonding and dielectric barrier discharge activated bonding were performed in comparison experiments,and the bonding strength was characterized by tensile failure test.The results showed that the bonding strength was higher under the nano-gap dielectric barrier discharge.This process completed 110°C ultra-low temperature anodic bonding and the bonding strength reached 2 MPa.Finally,the mechanism of promoting bonding after activation is also discussed.
