Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importa...Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importantly,it overcomes the constraint that the standard commercial GaAs pHEMT MMIC process is usually not compatible with highquality varactors for VCO,and it significantly improves the phase noise and frequency tuning linearity performances compared to either MMIC or HMIC implementation. It is a novel and high-quality method to develop microwave and millimeter wave VCO.展开更多
基于源简并电感共源共栅结构,设计了1种有源自偏置低噪声放大器,既可消除偏置电路功耗,又能克服无源自偏置噪声较高的缺点;另外利用键合线作为高Q值电感元件,进一步降低噪声系数并减小芯片面积.所设计低噪声放大器采用TSMC 0.18μm CMO...基于源简并电感共源共栅结构,设计了1种有源自偏置低噪声放大器,既可消除偏置电路功耗,又能克服无源自偏置噪声较高的缺点;另外利用键合线作为高Q值电感元件,进一步降低噪声系数并减小芯片面积.所设计低噪声放大器采用TSMC 0.18μm CMOS工艺进行优化设计并流水制备.仿真结果表明,在12-16GHz频段内,噪声系数NF低于3.2 d B,输入3阶交调点IIP3为1.573 d Bm.研制芯片面积为540μm×360μm,在1.8 V电压下,消耗16 m A电流.结果表明芯片测试实现在12.2-15.5 GHz频段上,输入输出反射性能良好,正向增益S_(21)>6 d B,反向隔离度S_(12)<-32.5 d B.展开更多
文摘Using an in-house MMIC and an off-chip,high-quality varactor, a novel wide band VCO covered Ku band is introduced. In contrast to HMIC technology, this method reduces the complexity of microchip assembly. More importantly,it overcomes the constraint that the standard commercial GaAs pHEMT MMIC process is usually not compatible with highquality varactors for VCO,and it significantly improves the phase noise and frequency tuning linearity performances compared to either MMIC or HMIC implementation. It is a novel and high-quality method to develop microwave and millimeter wave VCO.
文摘基于源简并电感共源共栅结构,设计了1种有源自偏置低噪声放大器,既可消除偏置电路功耗,又能克服无源自偏置噪声较高的缺点;另外利用键合线作为高Q值电感元件,进一步降低噪声系数并减小芯片面积.所设计低噪声放大器采用TSMC 0.18μm CMOS工艺进行优化设计并流水制备.仿真结果表明,在12-16GHz频段内,噪声系数NF低于3.2 d B,输入3阶交调点IIP3为1.573 d Bm.研制芯片面积为540μm×360μm,在1.8 V电压下,消耗16 m A电流.结果表明芯片测试实现在12.2-15.5 GHz频段上,输入输出反射性能良好,正向增益S_(21)>6 d B,反向隔离度S_(12)<-32.5 d B.
