IEDA-I雾化镀膜显现潜在手印技术

本文介绍一种常压条件下使用IEDA-I雾化镀膜常见客体表面潜在手印显现新技术,探索替代现场操作不便且设备昂贵的超真空镀膜显现潜在手印的可行性,便于犯罪现场和实验室操作使用,提高犯罪现场潜在手印的提取率和鉴定率,推动刑事技术的发展和应用。通过制作大量常见的非渗透客体和半渗透客体作为潜在手印样本,使用IEDA试剂对遗留有潜在手印的客体表面处理;然后使用碘晶体升华器对上述客体表面进行处理。试验结果显示:IEDA-I雾化镀膜显现潜在手印技术和传统的超真空镀膜显现法相比,具有操作程序简单、适用于非渗透和半渗透客体,显出纹线清晰连贯,具有不易扩散,反差较强,易于拍照固定等优点,适合于犯罪现场上和实验室内大面积潜在手印搜索和显现的使用。

EAST锂化系统的优化及其对等离子体性能的影响

为提高锂膜在先进实验超导托卡马克(EAST)内真空室器壁上的均匀性,从而提高锂膜对再循环的控制,对杂质的抑制能力,优化设计了新型三孔蒸发型坩埚,并成功的用于锂化壁处理实验。实验表明,锂膜在内真空室器壁上更加均匀,坩埚附近没有出现明显的锂膜起皮现象,下石墨偏滤器得到有效的覆盖。锂膜均匀性的提高,有效的提升了初次锂化壁处理对控制再循环,抑制杂质的能力,同时也延长了锂膜的寿命。为了恢复内真空室第一壁上退化锂膜的性能,优化设计了一套新型炮间锂化系统。新型炮间锂化系统成功在等离子体放电间隙开展了锂化壁处理,挡板开启后,锂蒸气成功注入到内真空室中,有效地抑制了等离子体放电中的再循环水平、杂质含量及总辐射功率。

磁记录的百年回顾与展望

引言磁记录是以磁性薄膜为记录介质,用磁的或与磁结合的方法实现信息存取的技术。主要有录音、录像磁带;电子照像软盘;计算机外存硬/软磁盘,数据磁带、磁卡;

Preparation and characterization of diamond film on Cu substrate using Cu-diamond composite interlayer

Large area diamond films were fabricated on copper substrates by a multi-step process comprised of electroplating Cu-diamond composite layer on Cu substrate, plating a Cu layer to fix the protruding diamond particles, and depositing continuous diamond film on composite interlayer by hot-filament chemical vapor deposition （HFCVD）. The interface characteristics, internal stress and adhesion strength were investigated by scanning electron microscopy, Raman analysis and indentation test. The results show that the continuous film without cracks is successfully obtained. The microstructure of the film is a mixture of large cubo-octahedron grains grown from homo-epitaxial growth and small grains with （111） apparent facets grown from lateral second nuclei. The improved adhesion between diamond film and substrate results from the deep anchoring of the diamond particles in the Cu matrix and the low residual stress in the film.

Electroless plating and growth kinetics of Ni-P alloy film on SiC_p/Al composite with high SiC volume fraction

After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni?P alloy plating. Surface morphology of the composite and its effect on the Ni?P alloy depositing process and bonding action of Ni and P atoms in the Ni?P alloy were studied. The results show that inhomogeneous distribution of the Sn/Pd activating points results in preferential deposition of the Ni?P alloy particles on the Al alloy and rough SiC particle surfaces and in the etched caves. The Ni?P alloy film has an amorphous structure where chemical bonding between Ni and P atoms exists. After a continuous Ni?P alloy film formed, electroless Ni?P alloy plating is not affected by surface morphology and characteristics of the SiCp/Al composite any longer, but by the electroless plating process itself. The Ni?P alloy film follows linear growth kinetics with an activation energy of 68.44 kJ/mol.

Progress of electroplating and electroless plating on magnesium alloy

The current research processes of electroplating and electroless Ni-P alloy plating on magnesium alloys were reviewed. Theoretically,the reason for difficulties in electroplating and electroless plating on magnesium alloys was given.The zinc immersion, copper immersion,direct electroless Ni-P alloy plating and electroplating and electroless plating on magnesium alloys prepared by chemical conversion coating were presented in detail.Especially,the research development of magnesium alloy AZ91 and AZ31 was discussed briefly.Based on the analysis,the existing problems and future research directions were then given.

Preparation and characterization of nanocrystalline SnO_2 thin film by electrodeposition technique

A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.

Properties of fluoride film and its effect on electroless nickel deposition on magnesium alloys

The physical characteristics and microstructure of the fluoride film formed during activation were investigated using SEM,XPS and SAM,and its stability in electroless nickel(EN) bath was analyzed.The effects of the fluoride film on EN deposition were studied additionally.The results show that the fluoride film on magnesium alloys is a kind of porous film composed of MgF2 with thickness of 1.6-3.2 μm.The composition of the activation bath and pretreatment of EN processing have influence on the composition of the fluoride film.The fluoride is stable and dissolves little in EN bath;as a result,the fluoride film can protect magnesium substrate from the corrosion of EN bath.The composition of fluoride determines the initial deposition of EN and part of the fluoride film finally exists as inclusion in EN coating.

Effect of deposition parameters on mechanical properties of TiN films coated on 2A12 aluminum alloys by arc ion plating (AIP)

TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.

汞电极毛细管顶端导电膜的生成

前言在一些电子器件和传感器加工过程中,往往需要在某些非导体表面上镀上一层导电物质,使其表面具有导电性,从而达到传感连通目的。基于玻璃表面,可在其上面镀上一层二氧化锡膜,使其具有导电性。此类镀膜法可分为蒸气法、浸渍法、烟化法和涂敷法等。本文是运用烟化镀膜法,针对汞电极毛细管顶端镀膜理论和电镀气氛控制进行的一系列研究和探讨。镀膜理论烟化法镀膜是把氯化锡和氯化锑溶液在400℃～700℃汽化成烟雾至蒸气通过加热的基体时,在其表面形成金属氧化膜,其发生的反应为:

Formation of nanocrystalline microstructure in arc ion plated CrN films

Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.

Effect of ionic liquids on stability of O/W miniemulsion for application of low emission coating products

Room temperature ionic liquids(RTILs) are non-volatile organic salts. They may replace conventional coalescing agents in latex coating thus reducing volatile organic compounds(VOCs) emission as well as improving performance of latex coating products such as better thermal stability, conductivity, and antifouling property. The formation of latex coating containing RTILs can be achieved by encapsulation of RTILs inside particles via miniemulsion polymerization. In this study, the role of RTILs and its concentration on stability of miniemulsion during storage and polymerization were investigated. It has been found that, above a critical concentration(10 wt%), adding more RTILs to oil phase may weaken miniemulsion stability during storage as well as polymerization. Such observations were consistent with the zeta potential measurement for miniemulsions prepared at the similar conditions. The results obtained here would be a useful guideline for the development of new waterborne coating products with desirable functions and particle sizes.

Antibacterial Surface Treatment of Aluminum Materials

Aluminum specimens were anodized in a sulfuric acid bath, thensilver was electrodeposited in pores of the anodized aluminum byusing alternating current. The anodized aluminum with depositedsilver was tested for its antibacterial performance. The results showthat the antibacterial rates of the specimens are above 95/100against the growth of E. coli, P. Aeruginasa, S. faecalis and S.aureus. The morphology of the silver in pores of anodized aluminum ischaracterized by transmission electron microscopy, and themicrographs indicate that silver is assembled in the form ofnanowires with a diameter of 10 nm or 25 nm. The nanowires have astructure of parallel bright stripes alternating with parallel darkstripes.

PCB拒焊原因分析和改善应用

引言通常情况下电子器件的表面装连工艺（SMT）中最关键的过程就是焊接，而焊接的三个主要作用它们分别是：

Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film

Complementary metal oxide semiconductor(CMOS) image sensors(CIS) are being widely used in digital video cameras, web cameras, digital single lens reflex camera(DSLR), smart phones and so on, owing to their high level of integration, random accessibility, and low-power operation. It needs to be installed with the cover glass in practical applications to protect the sensor from damage, mechanical issues,and environmental conditions, which, however, limits the accuracy and usability of the sensor due to the reflection in the optical path from air-to-cover glass-to-air. In this work, the flexible 3D nanocone anti-reflection(AR) film with controlled aspect ratio was firstly employed to reduce the light reflection at air/cover glass/air interfaces by directly attaching onto the front and rear sides of the CIS cover glass.As both the front and rear sides of cover glass were coated by the AR film, the output image quality was found to be improved with external quantum efficiency increased by 7%, compared with that without AR film. The mean digital data value, root-mean-square contrast, and dynamic range are increased by45.14%, 38.61% and 57, respectively, for the output image with AR films. These results provide a novel and facile pathway to improve the CIS performance and also could be extended to rational design of other image sensors and optoelectronic devices.

Optimization of the cavity facet coating in high power GaN-based semiconductor laser diodes

A method to calculate the reflectivity of the coated cavity facet was proposed, and the distribution of the optical power near the two coated cavity facets was calculated for GaN-based laser diodes. A new design method for reducing the optical power at the two cavity facets without changing the output power of laser diodes was discussed, which is helpful to optimize the cavity facet coating and raise the threshold current at which catastrophic optical damage occurs.