After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni?P alloy plating. Surface morphology of the composite and its effect on the Ni?P alloy depositing process and bo...After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni?P alloy plating. Surface morphology of the composite and its effect on the Ni?P alloy depositing process and bonding action of Ni and P atoms in the Ni?P alloy were studied. The results show that inhomogeneous distribution of the Sn/Pd activating points results in preferential deposition of the Ni?P alloy particles on the Al alloy and rough SiC particle surfaces and in the etched caves. The Ni?P alloy film has an amorphous structure where chemical bonding between Ni and P atoms exists. After a continuous Ni?P alloy film formed, electroless Ni?P alloy plating is not affected by surface morphology and characteristics of the SiCp/Al composite any longer, but by the electroless plating process itself. The Ni?P alloy film follows linear growth kinetics with an activation energy of 68.44 kJ/mol.展开更多
A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2...A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.展开更多
Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations...Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.展开更多
基金Project(2014DFA50860)supported by International Science&Technology Cooperation Program of China
文摘After Sn/Pd activating, the SiCp/Al composite with 65% SiC (volume fraction) was coated by electroless Ni?P alloy plating. Surface morphology of the composite and its effect on the Ni?P alloy depositing process and bonding action of Ni and P atoms in the Ni?P alloy were studied. The results show that inhomogeneous distribution of the Sn/Pd activating points results in preferential deposition of the Ni?P alloy particles on the Al alloy and rough SiC particle surfaces and in the etched caves. The Ni?P alloy film has an amorphous structure where chemical bonding between Ni and P atoms exists. After a continuous Ni?P alloy film formed, electroless Ni?P alloy plating is not affected by surface morphology and characteristics of the SiCp/Al composite any longer, but by the electroless plating process itself. The Ni?P alloy film follows linear growth kinetics with an activation energy of 68.44 kJ/mol.
文摘A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnOz thin films was proposed with current density of 8 mA/cm^2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0. 03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150℃ for 10 h.
基金Project(2010-0001-226) supported by the National Core Research Center (NCRC) Program through the National Research Foundation of Korea funded by the Ministry of Education, Science and TechnologyProject supported by the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Korea
文摘Applying negative bias voltages caused significant microstructure changes in arc ion plated CrN films. Nanocrystalline microstructures were obtained by adjusting the negative bias voltage. Structural characterizations of the films were carried out using X-ray diffractometry (XRD) and high-resolution transmission electron microscopy (HR-TEM). The results indicated that increasing ion bombardment by applying negative bias voltages resulted in the formation of defects in the CrN films, inducing microstructure evolution from micro-columnar to nanocrystalline. The microhardness and residual stresses of the films were also affected. Based on the experimental results, the evolution mechanisms of the film microstructure and properties were discussed by considering ion bombardment effects.
