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射频反应性溅射Cd-Sn合金靶沉积透明导电Cd_2SnO_4薄膜 被引量:4
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作者 蒋生蕊 彭栋梁 +1 位作者 孙文红 王万录 《太阳能学报》 EI CAS CSCD 北大核心 1992年第2期118-122,共5页
在Ar+O_2混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd_2SnO_4(简称CTO)膜。实验表明,该膜的电学和光学性质依赖于混合气体中的氧浓度和衬底温度,最低电阻率为2.89×10^(-6)Ω·m,可见光区域最高透光率为95%。用X射... 在Ar+O_2混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd_2SnO_4(简称CTO)膜。实验表明,该膜的电学和光学性质依赖于混合气体中的氧浓度和衬底温度,最低电阻率为2.89×10^(-6)Ω·m,可见光区域最高透光率为95%。用X射线衍射测量了不同衬底温度下薄膜的结构。 展开更多
关键词 镉-锡 合金 薄膜 射频 Cd2SnO4
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Pb-Sn-Cd三元系Pb基α相固溶体点阵参数、摩尔体积、超额摩尔体积的研究
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作者 刘恒利 龙骧 +1 位作者 高忠民 赵慕愚 《高等学校化学学报》 SCIE EI CAS CSCD 北大核心 1990年第12期1405-1409,共5页
用X射线衍射法测定了Pb-Sn-Cd三元系Pb基α相固溶体的点阵参数和摩尔体积。发现点阵参数随摩尔分数浓度呈线性变化,点阵畸变主要受组分的尺寸效应影响;摩尔体积对理想溶液行为呈正偏差,且Cd对超额摩尔体积的贡献远大于Sn。分别按Vegard... 用X射线衍射法测定了Pb-Sn-Cd三元系Pb基α相固溶体的点阵参数和摩尔体积。发现点阵参数随摩尔分数浓度呈线性变化,点阵畸变主要受组分的尺寸效应影响;摩尔体积对理想溶液行为呈正偏差,且Cd对超额摩尔体积的贡献远大于Sn。分别按Vegard定律和亚规则溶液模型对点阵参数和摩尔体积的数据与摩尔分数的关系进行数学回归,表明两解析式的预测精度均在实验误差范围内。 展开更多
关键词 -- 合金固溶体 热力学行为
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Promising Cd-free double buffer layer in CZTSSe thin film solar cells 被引量:2
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作者 Siyu Wang Zhenwu Jiang +7 位作者 Zhan Shen Yali Sun Hongling Guo Li Wu Jianjun Zhang Jianping Ao Hai Wang Yi Zhang 《Science China Materials》 SCIE EI CSCD 2021年第2期288-295,共8页
Zn(O,S)film is widely used as a Cd-free buffer layer for kesterite thin film solar cells due to its low-cost and eco-friendly characteristics.However,the low carrier concentration and conductivity of Zn(O,S)will deter... Zn(O,S)film is widely used as a Cd-free buffer layer for kesterite thin film solar cells due to its low-cost and eco-friendly characteristics.However,the low carrier concentration and conductivity of Zn(O,S)will deteriorate the device performance.In this work,an additional buffer layer of In2S3 is introduced to modify the properties of the Zn(O,S)layer as well as the CZTSSe layer via a post-annealing treatment.The carrier concentrations of both the Zn(O,S)and CZTSSe layers are increased,which facilitates the carrier separation and increases the open circuit voltage(VOC).It is also found that ammonia etching treatment can remove the contamination and reduce the interface defects,and there is an increase of the surface roughness of the In2S3 layer,which works as an antireflection layer.Consequently,the efficiency of the CZTSSe solar cells is improved by 24%after the annealing and etching treatments.Simulation and experimental results show that a large band offset of the In2S3 layer and defect energy levels in the Zn(O,S)layer are the main properties limiting the fill factor and efficiency of these CZTSSe devices.This study affords a new perspective for the carrier concentration enhancement of the absorber and buffer layers by In-doping,and it also indicates that In2S3/Zn(O,S)is a promising Cd-free hybrid buffer layer for high-efficiency kesterite solar cells. 展开更多
关键词 double buffer layer CZTSSe In-doping band offset
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