Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre h...Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.展开更多
The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu t...The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.展开更多
Photocatalytic water splitting is an economical and sustainable pathway to use solar energy for large‐scale H2production.We report a highly efficient noble‐metal‐free photocatalyst formed by integrating amorphous N...Photocatalytic water splitting is an economical and sustainable pathway to use solar energy for large‐scale H2production.We report a highly efficient noble‐metal‐free photocatalyst formed by integrating amorphous NiS with a CdS nanorods(NRs)/ZnS heterojunction material for photocatalytic H2production in water under visible light irradiation(?>420nm).The results show that the photocatalytic H2production rate reaches an optimal value of up to574μmol·h–1after the loading of NiS,which is more than38times higher than the catalytic activity of pure CdS NRs.The average apparent quantum yield is^43.2%during5h of irradiation by monochromatic420nm light.The present study demonstrates the advantage of integration strategies to form not only semiconductor heterojunctions but also photocatalyst‐cocatalyst interfaces to enhance the catalytic activity for photocatalytic H2production.展开更多
文摘Well known for their good performance,thin film transistors (TFTs) with active layers which were nickel induced laterally crystallized,are fabricated by conventional process of dual gate CMOS.The influence of pre high temperature treatment of device fabrication on the performance of TFTs is also investigated.The experiment shows that the high temperature treatment affects the performance of the devices strongly.The best performance is obtained by adopting pre treatment of 1000℃.The mobility of 314cm 2/(V·s) is obtained at NMOS TFTs with pre treatment of 1000℃,which is 10% and 22% higher than that treated at 1100℃ and without pre high temperature treatment,respectively.A maximum on/off current ratio of 3×10 8 is also obtained at 1000℃.Further investigation of uniformity verifies that the result is reliable.
文摘The structure and processes of nickel induced lateral crystallization are studied.The structure of metal induced lateral crystallization(MILC) is improved by opening a seed window on the buried oxide,which is helpfu to get superior quality of large grain poly Si at low temperature.By optimizing the temperature and time of annealing based on others' pervious work,the large grain poly Si with few defects are obtained,and the typical grain size is 70～80μm.The methods of etching NiSi 2 which is created after the long time annealing are also studied for the first time.Finally,a method is successfully chosen to reduce the possible contamination of Ni and to guarantee the MILC for the submicron VLSI application.
基金supported by the National Key Research and Development Program of China(2017YFA0402800)the National Natural Science Foundation of China(51772285,21473170)~~
文摘Photocatalytic water splitting is an economical and sustainable pathway to use solar energy for large‐scale H2production.We report a highly efficient noble‐metal‐free photocatalyst formed by integrating amorphous NiS with a CdS nanorods(NRs)/ZnS heterojunction material for photocatalytic H2production in water under visible light irradiation(?>420nm).The results show that the photocatalytic H2production rate reaches an optimal value of up to574μmol·h–1after the loading of NiS,which is more than38times higher than the catalytic activity of pure CdS NRs.The average apparent quantum yield is^43.2%during5h of irradiation by monochromatic420nm light.The present study demonstrates the advantage of integration strategies to form not only semiconductor heterojunctions but also photocatalyst‐cocatalyst interfaces to enhance the catalytic activity for photocatalytic H2production.
