WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer...WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.展开更多
Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss ...Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change the Hydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energy are observed from the center donor and off-center donor.展开更多
Based on the analysis of carrier dynamics in quantum dots （QDs）, the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three...Based on the analysis of carrier dynamics in quantum dots （QDs）, the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved mo6ulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model, which is helpful for QD lasers research.展开更多
文摘WT8.BZ]The effects of postgrowth rapid thermal annealing have been studied on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick In xGa 1-x As (x=0,0 1 and 0 2) overgrowth layer.At a higher annealing temperature (T≥750℃),the photoluminescence peak of InGaAs layer has been observed at the lower-energy side of InAs quantum-dot peak.In addition,a similar blueshift in photoluminescence (PL) emission energy is observed for all samples when the annealing temperature increases from 650 to 850℃.However,the trend of photoluminescence linewidth towards narrowing is totally different for InAs quantum dots with different In mole fraction in InGaAs overgrowth layer.The results suggest that the intermixing in the lateral direction plays an important role in obtaining a better understanding of the modification of optical properties induced by the rapid thermal annealing.
基金Supported by the National Natural Science Foundation of China under Grant No.10775035
文摘Using the configuration-integration methods （CI） [Phys. Rev. B 45 （1992） 19], we report the results of the Hydrogenie-impurity ground state in a GaAs/AIAs spherical quantum dot under an electric field. We discuss the variations of the binding energies of the Hydrogenic-impurity ground state as a function of the position of impurity D, the radius R of the quantum dot, and also as a function of electric field F. We find that the ground energy and binding energy of impurity placed anywhere depend strongly on the position of impurity. Also, electric field can largely change the Hydrogenic-impurity ground state only limiting to the big radius of quantum dot. And the differences in energy level and binding energy are observed from the center donor and off-center donor.
文摘Based on the analysis of carrier dynamics in quantum dots （QDs）, the numerical model of InAs/GaAs QD laser is developed by means of complete rate equations. The model includes four energy levels and among them three energy levels join in lasing. A simulation is conducted by MATLAB according to the rate equation model we obtain. The simulation results of PI characteristic, gain characteristic and intensity modulation response are reasonable. Also, the relations between the left facet reflectivity of laser cavity and threshold current as well as modulation bandwidth are studied. It is indicated that the left facet reflectivity increasing can result in reduced threshold current and improved mo6ulation bandwidth, which is in accordance with experimental results. The internal mechanism of QD lasers is fully described with the rate equation model, which is helpful for QD lasers research.
