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话务突增区域长跳频应用方案 被引量:1
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作者 李海鹏 《天津科技》 2010年第3期88-92,共5页
在一些局部话务突增区域会经常性的出现一些话务突增现象,同时这些区域也经常会涉及许多高端用户的业务使用问题,为了减少用户的投诉和保证这些高端用户的通话质量,经常需要对这些区域扩容,其中应急通信车的使用是一个重要的手段,但是... 在一些局部话务突增区域会经常性的出现一些话务突增现象,同时这些区域也经常会涉及许多高端用户的业务使用问题,为了减少用户的投诉和保证这些高端用户的通话质量,经常需要对这些区域扩容,其中应急通信车的使用是一个重要的手段,但是频率规划问题一直是困扰扩容实施中必须解决的难点,对这一问题进行了探讨。 展开更多
关键词 长调频 频率规划 碰撞率 失桢率
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Numerical Simulation on Broad-band Er-doped Superfluorescent Fiber Source Filter Using Long Period Chirped Fiber Grating
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作者 ZHAO Shu-ping WANG Pin-hong +3 位作者 ZHANG Xiao-xia FANG Xing HE Xu-yi XING Zi-bin 《Semiconductor Photonics and Technology》 CAS 2008年第1期28-31,共4页
Given is an analysis of broad-band Er-doped superfluorescent fiber source(EDSFS)filter using long period chirped fiber grating by transmission matrix method.For our EDSFS attenuated amplitude demand and the flattened ... Given is an analysis of broad-band Er-doped superfluorescent fiber source(EDSFS)filter using long period chirped fiber grating by transmission matrix method.For our EDSFS attenuated amplitude demand and the flattened wavelength range demand,proposed are the key factors of designing such filters of high performances.The simulation result demonstrates that such type filters have an enough attenuation to flatten the dramatic increase in output amplified spontaneous emission(ASE)in the wavelength range of 1529nm^1535nm by choosing conformable fiber filter parameters such as chirped degree,original period,induced index change,length of the fiber filter,and then broad-band EDSFS could be achieved. 展开更多
关键词 Er-doped superfluorescent fiber source(EDSFS) numerical simulation long period chirped fibergrating
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High efficiency spreading spectrum modulation using double orthogonal complex sequences
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作者 Shi Xiaohong 《Engineering Sciences》 EI 2012年第5期71-75,共5页
This paper presents a novel scheme of high efficiency spreading spectrum modulation using double orthogonal complex sequences (DoCS). In this scheme, input data bit-stream is split into many groups with length M. Ea... This paper presents a novel scheme of high efficiency spreading spectrum modulation using double orthogonal complex sequences (DoCS). In this scheme, input data bit-stream is split into many groups with length M. Each group is then mapped into a word of width M and then utihzed to select one sequence from 2u-2 DoCS sequences each with length L. After that, the selected sequence is modulated on carrier in quadrature phase shift keying (QPSK) mode. In addition, a new method named forward phase correction (FPC) is put forward for carrier recovery. Theoretical analysis and bit-error-ratio(BER) experiment results indicate that the proposed scheme has better performance than the conventional direct sequence spread spectrum(DSSS) scheme both in bandwidth efficiency and processing gain of the receiver. 展开更多
关键词 modulation and demodulation high efficiency spreading spectrum modulation forward phase correction double orthogonal complex sequences
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Uncooled InAs_(0.09)Sb_(0.91) photoconductors with cutoff wavelength extended to 11.5 μm
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作者 高玉竹 龚秀英 +4 位作者 周冉 李继军 冯彦斌 Takamitsu Makino Hirofumi Kan 《Optoelectronics Letters》 EI 2015年第5期352-355,共4页
Uncooled In As Sb photoconductors were fabricated. The photoconductors were based on In As0.05Sb0.95 and In As0.09Sb0.91 thick epilayers grown on In As substrates by melt epitaxy(ME). Ge immersion lenses were set on t... Uncooled In As Sb photoconductors were fabricated. The photoconductors were based on In As0.05Sb0.95 and In As0.09Sb0.91 thick epilayers grown on In As substrates by melt epitaxy(ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of In As0.09Sb0.91 detectors is obviously extended to 11.5 μm, and that of In As0.05Sb0.95 detectors is 8.3 μm. At room temperature, the peak detectivity of Dλp* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×109 cm·Hz1/2·W-1 for In As0.09Sb0.91 photoconductors, the detectivity D* at wavelength of 9 μm is 7.56×108 cm·Hz1/2·W-1, and that at 11 μm is 3.92×108 cm·Hz1/2·W-1. The detectivity of In As0.09Sb0.91 detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of In As0.05Sb0.95 detectors, which rises from the increase of arsenic(As) composition in In As0.09Sb0.91 materials. 展开更多
关键词 cutoff Sb Uncooled InAs thick magnitude immersion arsenic longer epitaxy spectrometer
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