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无磁芯复位电路的磁脉冲压缩系统的研制 被引量:3
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作者 何孟兵 白浩银 《高电压技术》 EI CAS CSCD 北大核心 2010年第10期2525-2530,共6页
为减小磁开关的体积、提高磁脉冲压缩的能量传递效率和频率,分析了基于省去磁芯复位电路的磁脉冲压缩系统的工作原理,结合磁开关的工作特性,设计出一种新型的单级磁脉冲压缩拓扑结构,它省去了磁芯复位电路且结构上更加简单、紧凑;并详... 为减小磁开关的体积、提高磁脉冲压缩的能量传递效率和频率,分析了基于省去磁芯复位电路的磁脉冲压缩系统的工作原理,结合磁开关的工作特性,设计出一种新型的单级磁脉冲压缩拓扑结构,它省去了磁芯复位电路且结构上更加简单、紧凑;并详细介绍了磁脉冲压缩装置的工作原理,通过理论计算给出了此装置关键元件的参数;最后结合理论分析,实验研究了两种特性的磁脉冲压缩装置的不同特性;两种装置可以分别输出幅值为4.8kV、脉冲上升沿0.5μs和幅值为3.6kV、脉冲上升沿10μs的脉冲电压波形;实验结果分析表明:由于磁开关的特性,可使主回路气体开关实现零电流开通,有效减小了气体间隙的损耗,有利于提高气体开关的工作频率。 展开更多
关键词 脉冲功率技术 磁开关 磁脉冲压缩 气体开关 零电流闭合 气体间隙损耗 饱和
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氢气引起光纤衰减增加的探讨
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作者 邓祖煜 《现代有线传输》 1997年第1期26-30,共5页
本文介绍了光纤在氢气中引起衰减增加的机理。一种具有可逆变化的光纤损耗增加称为间隙损耗,依赖于温度与红分压;另一种称为永久损耗,依赖于温度、氢分压、时间以及光纤的掺杂剂。对光缆中的原材料如填充油膏等性能要足够重视,如合... 本文介绍了光纤在氢气中引起衰减增加的机理。一种具有可逆变化的光纤损耗增加称为间隙损耗,依赖于温度与红分压;另一种称为永久损耗,依赖于温度、氢分压、时间以及光纤的掺杂剂。对光缆中的原材料如填充油膏等性能要足够重视,如合氢量高的填充油膏,会释放氢气而扩散到光纤芯区引起1310nm与1550nm波长区域衰减的增加。 展开更多
关键词 间隙损耗 永久损耗 填充油膏 光缆 光纤传输线
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Effects of interstitial H and/or C atoms on the magnetic and magnetocaloric properties of La(Fe, Si)_(13)-based compounds 被引量:7
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作者 ZHANG Hu HU FengXia +1 位作者 SUN JiRong SHEN BaoGen 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2013年第12期2302-2311,共10页
La(Fe, Si)13-based compounds have been considered as promising candidates for magnetic refrigerants particularly near room temperature. Herein we review recent progress particularly in the study of the effects of in... La(Fe, Si)13-based compounds have been considered as promising candidates for magnetic refrigerants particularly near room temperature. Herein we review recent progress particularly in the study of the effects of interstitial H and/or C atoms on the magnetic and magnetocaloric properties of La(Fe, Si)13 compounds. By introducing H and/or C atoms, the Curie temperature Tc increases notably with the increase of lattice expansion which makes the Fe 3d band narrow and reduces the overlap of the Fe 3d wave functions. The first-order itinerant-electron metamagnetic transition is conserved and the MCE still remains high after hydrogen absorption. In contrast, the characteristic of magnetic transition varies from first-order to second-order with the increase of C concentration, which leads to remarkable reduction of thermal and magnetic hysteresis. In addition, the introduc- tion of interstitial C atoms promotes the formation of NaZnl3-type (1:13) phase in La(Fe, Si)13 compounds, and thus reducing the annealing time significantly from 40 days for LaFe11.7Sil.3 to a week for LaFell.7Sil.3C0.2. The pre-occupied interstitial C atoms may depress the rate of hydrogen absorption and release, which is favorable to the accurate control of hydrogen content. It is found that the reduction of particle size would greatly depress the hysteresis loss and improve the hydrogenation process. By the incorporation of both H and C atoms, large MCE without hysteresis loss can be obtained in La(Fe, Si)13 compounds around room temperature, for instance, La0.7Pr0.3Fe115Si15C0.2H12 exhibits a large IASM[ of 22.1 J/(kg'K) at Tc = 321 K without hysteresis loss for a field change of 0-5 T. 展开更多
关键词 H atom C atom La(Fe Si)13
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