针对低功耗有损网络(low power lossy networks,LLN)移动性支持路由算法中移动节点(mobile node,MN)备选父节点集选取不合理、存在障碍物的中速场景下MN寻路不及时和路由度量单一等问题,提出中速场景下MN邻居探测的LLN高效寻路(highly-e...针对低功耗有损网络(low power lossy networks,LLN)移动性支持路由算法中移动节点(mobile node,MN)备选父节点集选取不合理、存在障碍物的中速场景下MN寻路不及时和路由度量单一等问题,提出中速场景下MN邻居探测的LLN高效寻路(highly-efficient MN neighbor detection based pathfinding protocol for LLN,NDM-RPL)算法。提出链路质量检测机制,通过计算安全阈值和危险阈值以便MN及时寻找下一个父节点(nextparent node,NPN)。其次,提出基于变异系数的父本选择目标函数,MN选择NPN综合考虑了多种度量选出NPN。最后,提出监听预选机制,解决了备选父节点集选取不合理的问题。理论分析和仿真结果表明,NDM-RPL算法在MN能耗和控制开销等方面的性能均得到了有效提升。展开更多
Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low...Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.展开更多
This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 base...This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO/SiO2 stacks act as the high reflector （HR） and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO/ TiO/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm^2 （1064 nm, 12 ns）. The possible laser damage mechanism of the mirror is discussed.展开更多
Top-contact organic field effect transistors(OFETs) based on poly(3-hexylthiophene)(P3HT) with different concentrations in chloroform(CHCl3) are fabricated.The output characteristics indicate that the P3HT concentrati...Top-contact organic field effect transistors(OFETs) based on poly(3-hexylthiophene)(P3HT) with different concentrations in chloroform(CHCl3) are fabricated.The output characteristics indicate that the P3HT concentration has significant influence on the OFET devices.The performance of the devices firstly is enhanced with increasing the P3HT concentration,and then decreases.The optimized devices with the P3HT concentration of 2 mg/mL show the best performance.The fieldeffect mobility is up to 1.4×10-2 cm2/Vs,the threshold voltage(Vt) is as low as-20 V,and the current on/off ratio(Ion/off) is close to the order of 104.The results suggest that the P3HT aggregation patterns induced by different concentrations can improve the performance of the OFETs.展开更多
The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using...The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.展开更多
Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The thr...Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The threshold logic gate has attracted much attention because of its powerful logic function. The resonant tunneling diode （RTD） is well suited for imple- menting the threshold logic gate because of its high-speed switching capability, negative differential resistance （NDR） charac- teristic, and functional versatility. In this paper, based on the Reed-Muller （RM） algebraic system, a novel method is proposed to convert three-variable non-threshold functions to the XOR of multiple threshold functions, which is simple and has a program- mable implementation. With this approach, all three-variable non-threshold functions can be presented by the XOR of two threshold functions, except for two special functions. On this basis, a novel three-variable universal logic gate （ULG3） is proposed, composed of two RTD-based universal threshold logic gates （UTLG） and an RTD-based three-variable XOR gate （XOR3）. The ULG3 has a simple structure, and a simple method is presented to implement all three-variable functions using one ULG3. Thus, the proposed ULG3 provides a new efficient universal logic gate to implement RTD-based arbitrary n-variable functions.展开更多
文摘针对低功耗有损网络(low power lossy networks,LLN)移动性支持路由算法中移动节点(mobile node,MN)备选父节点集选取不合理、存在障碍物的中速场景下MN寻路不及时和路由度量单一等问题,提出中速场景下MN邻居探测的LLN高效寻路(highly-efficient MN neighbor detection based pathfinding protocol for LLN,NDM-RPL)算法。提出链路质量检测机制,通过计算安全阈值和危险阈值以便MN及时寻找下一个父节点(nextparent node,NPN)。其次,提出基于变异系数的父本选择目标函数,MN选择NPN综合考虑了多种度量选出NPN。最后,提出监听预选机制,解决了备选父节点集选取不合理的问题。理论分析和仿真结果表明,NDM-RPL算法在MN能耗和控制开销等方面的性能均得到了有效提升。
文摘Triple-threshold CMOS technique provides the transistors that have low-, normal-, and high-threshold voltage. This paper describes a low-power carry look-ahead adder with triple-threshold CMOS technique. While the low-threshold voltage transistors are used to reduce the propagation delay time in the critical path, the high-threshold voltage transistors are used to reduce the power consumption in the shortest path. Comparing with the conventional CMOS circuit, the circuit is achieved to reduce the power consumption by 14.71% and the power-delay-product by 16.11%. This circuit is designed with Samsung 0.35 um CMOS process. The validity and effectiveness are verified through the HSPICE simulation.
基金supported by the National Natural Science Foundation of China (No.50802080)the Natural Science Foundation of Fujian Province of China (No.2010J01349)
文摘This paper describes a new method to design a laser mirror with high reflectivity, wide reflection bandwidth and high laser- induced damage threshold. The mirror is constructed by three materials of HfO/TiO2/SiO2 based on electric field and temperature field distribution characteristics of all-dielectric laser high reflector. TiO/SiO2 stacks act as the high reflector （HR） and broaden the reflection bandwidth, while HfO2/SiO2 stacks are used for increasing the laser resistance. The HfO/ TiO/SiO2 laser mirror with 34 layers is fabricated by a novel remote plasma sputtering deposition. The damage threshold of zero damage probability for the new mirror is up to 39.6 J/cm^2 （1064 nm, 12 ns）. The possible laser damage mechanism of the mirror is discussed.
基金supported by the National Natural Science Foundation of China (No.60676051)the Natural Science Fund of Tianjin (No.07JCYBJC12700)the Fund of Key Discipline of Material Physics and Chemistry of Tianjin
文摘Top-contact organic field effect transistors(OFETs) based on poly(3-hexylthiophene)(P3HT) with different concentrations in chloroform(CHCl3) are fabricated.The output characteristics indicate that the P3HT concentration has significant influence on the OFET devices.The performance of the devices firstly is enhanced with increasing the P3HT concentration,and then decreases.The optimized devices with the P3HT concentration of 2 mg/mL show the best performance.The fieldeffect mobility is up to 1.4×10-2 cm2/Vs,the threshold voltage(Vt) is as low as-20 V,and the current on/off ratio(Ion/off) is close to the order of 104.The results suggest that the P3HT aggregation patterns induced by different concentrations can improve the performance of the OFETs.
基金conducted under Science Fund,Cycle 2007,of The Ministry of Science,Technology and Innovation,MalaysiaThe financial support from Universiti Sains Malaysia is gratefully acknowledged
文摘The operating parameters such as the internal quantum efficiency （η）, internal loss （α） and transparent threshold current density （J0） of double quantum well laser diodes were investigated and identified using the program, Integrated System Engineering-Technical Computer Aided Design （ISE-TCAD）. Various thicknesses （6, 7, 8, 10, 12 rim） of AlxInyGa1-x-yN barriers with （3 nm） Al0.08In0.08Ga0.84N wells as an active region were studied. The lowest threshold current （lth）, and the highest output power （Pop） were 116 mA and 196 mW respectively, at barriers thickness of 6 nm, Al mole fraction of 10% and In mole fraction of 1%, at an emission wavelength of 359.6 nm.
基金supported by the National Natural Science Foundation of China(Nos.61271124 and 61471314)the Zhejiang Provincial Natural Science Foundation of China(Nos.LY13F010001 and LY15F010011)
文摘Traditional CMOS technology faces some fundamental physical limitations. Therefore, it has become very important for the integrated circuit industry to continue to develop modem devices and new design methods. The threshold logic gate has attracted much attention because of its powerful logic function. The resonant tunneling diode （RTD） is well suited for imple- menting the threshold logic gate because of its high-speed switching capability, negative differential resistance （NDR） charac- teristic, and functional versatility. In this paper, based on the Reed-Muller （RM） algebraic system, a novel method is proposed to convert three-variable non-threshold functions to the XOR of multiple threshold functions, which is simple and has a program- mable implementation. With this approach, all three-variable non-threshold functions can be presented by the XOR of two threshold functions, except for two special functions. On this basis, a novel three-variable universal logic gate （ULG3） is proposed, composed of two RTD-based universal threshold logic gates （UTLG） and an RTD-based three-variable XOR gate （XOR3）. The ULG3 has a simple structure, and a simple method is presented to implement all three-variable functions using one ULG3. Thus, the proposed ULG3 provides a new efficient universal logic gate to implement RTD-based arbitrary n-variable functions.
