A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The referen...A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The reference has been successfully implemented in a Chartered 0.35μm CMOS process. The occupied chip area is 0. 022mm^2. Measurements indicate that without trimming, the average output voltage error is 6mV at room temperature compared with the simulation result. The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃ ,and the line regulation is ± 1.1%. The reference is applied in an adaptive power MOSFET driver.展开更多
On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating fro...On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.展开更多
A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors （BJT...A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors （BJTs） are used. The proposed voltage reference uses a current-mode topology by summing a PTAT current and a CTAT current into a re- sistor to generate the required reference voltage. It can also provide more than one reference voltage output, which is quite suitable for systems requiring many different reference voltages simultaneously. The occupied chip area is 0. 023mm^-2 . The operation supply voltage is from 2.5 to 6V, and the maximum supply current is 8.25μA. The designed three different out- puts are respectively about 203mV, 1.0V, and 2.05V at room temperature when the supply voltage is 4V. The circuit achieves a temperature coefficient of 31ppm/℃ in the temperature range of 0 to 100℃ and an average line regulation of ± 0. 203%/V. The voltage reference has been successfully applied in a white LED backlight driver chip.展开更多
目的:探究不同镇痛模式应用于慢性非癌性疼痛患者的镇痛效果。方法:选择2021年8月—2022年9月于启东市人民医院接受治疗的120例慢性非癌性疼痛患者为研究对象,分为研究组(n=60,接受综合镇痛)与对照组(n=60,单纯接受药物镇痛),比较两组...目的:探究不同镇痛模式应用于慢性非癌性疼痛患者的镇痛效果。方法:选择2021年8月—2022年9月于启东市人民医院接受治疗的120例慢性非癌性疼痛患者为研究对象,分为研究组(n=60,接受综合镇痛)与对照组(n=60,单纯接受药物镇痛),比较两组患者的治疗效果。结果:两组患者接受治疗后电痛阈及温度痛阈均较治疗前升高(均P<0.05),研究组患者电痛域及温度痛域均明显高于对照组(7.91±0.41 mA vs 7.21±0.39 mA,48.23±1.65℃vs 47.01±1.55℃,均P<0.05)。两组患者治疗后汉密尔顿焦虑量表(HAMA)和汉密尔顿抑郁量表(HAMD)评分均较治疗前降低(均P<0.05),研究组HAMA和HAMD均明显低于对照组(7.12±1.56分vs 9.89±2.08分,8.12±2.14分vs 10.23±2.98分,均P<0.05)。两组患者治疗后血清β-内啡肽(β-EP)、促肾上腺皮质激素(ACTH)及皮质醇(COR)水平较治疗前降低,研究组β-EP、ACTH及COR均明显低于对照组(均P<0.05)。研究组不良反应发生率低于对照组(10%vs 25%,P<0.05)。结论:采取综合镇痛措施治疗慢性非癌性疼痛患者,可提高电痛阈和温度痛阈,改善焦虑抑郁等不良情绪,降低炎症因子及不良反应发生率。展开更多
Strong shock may induce complex processes in porous materials. We use the newly developed materialpoint-method to simulate such processes in an HMX-like material. To pick out relevant information, morphological charac...Strong shock may induce complex processes in porous materials. We use the newly developed materialpoint-method to simulate such processes in an HMX-like material. To pick out relevant information, morphological characterization is used to treat with the temperature map. Via the Minkowski funetional analysis the dynamics and thermodynamics of the shock wave reaction on porous HMX-like material are studied. The geometrical and topological properties of the ＂hot-spots＂ are revealed. Numerical results indicate that, shocks in porous materials are not simple jump states as classically viewed, but rather are a complex sequence of compressions and rarefactions. They cover a broad spectrum of states. We can use coarse-grained description to the wave series. A threshold value of temperature presents a Turing pattern dynamical procedure. A higher porosity is generally preferred when the energetic material needs a higher temperature for initiation. The technique of data analysis can be used to other physical quantities, for example, density, particle velocity, some specific stress, etc. From a series of studies along the line, one may get a large quantity of information for desiring the fabrication of material and choosing shock strength according to what needed is scattered or connected ＂hot-spots＂. PACS numbers： 05.70.Ln, 05 Key words： porous material 70.-a, 05.40.-a, 62.50.Ef shock wave, Minkowski functionals展开更多
The cloud-detection procedure developed by McNally and Watts(MW03) was added to the Weather Research and Forecasting Data Assimilation System. To provide some guidelines for setting up cloud-detection schemes, this st...The cloud-detection procedure developed by McNally and Watts(MW03) was added to the Weather Research and Forecasting Data Assimilation System. To provide some guidelines for setting up cloud-detection schemes, this study compares the MW03 scheme to the Multivariate and Minimum Residual(MMR) scheme for both simulated and real Advanced Infrared Sounder(AIRS) radiances. Results show that there is a high level of consistency between the results from simulated and real AIRS data. As expected, both cloud-detection schemes perform well in finding the cloud-contaminated channels based on the channels' peak levels. The clouddetection results from MW03 are sensitive to the prescribed brightness temperature innovation threshold and brightness temperature gradient threshold. When increasing the brightness temperature innovation threshold for MW03 to roughly eight times the default threshold, the two cloud-detection schemes produce consistent data rejection distributions overall for high channels. MMR generally retains more data for long-wave channels. For both cloud-detection schemes, there is a high level of consistency between the cloud-free pixels and the visible/near-IR(Vis/NIR) cloud mask.展开更多
The quantum teleportation with the entangled thermai state is investigated based on the completely anisotropie Heisenberg chain in the presence of the externally inhomogeneous magnetic field. The effects of the anisot...The quantum teleportation with the entangled thermai state is investigated based on the completely anisotropie Heisenberg chain in the presence of the externally inhomogeneous magnetic field. The effects of the anisotropy and magnetic field for the quantum fidelity are studied in detail The zero temperature limit and the features of the nonzero temperature for this nonclassical fdelity are obtained. We find that the quantum teleportation demands more stringent conditions than the therma/ entanglement of the resource by investigating the threshold temperature of the thermal concurrence and the criticai temperature of the maximai teleportation fidelity. The useful quantum teleportation should avoid the point of the phase transition of the system and the anisotropy of the chain and the external magnetic field can control the applicability of the resource in the quantum teleportation.展开更多
文摘A novel MOS-only voltage reference is presented,which is based on the threshold voltage difference between p-type and n-type MOSFETs. Its precision is improved by the cancellation of the process variation. The reference has been successfully implemented in a Chartered 0.35μm CMOS process. The occupied chip area is 0. 022mm^2. Measurements indicate that without trimming, the average output voltage error is 6mV at room temperature compared with the simulation result. The temperature coefficient is 180ppm/℃ in the worst case in the temperature range of 0 to 100℃ ,and the line regulation is ± 1.1%. The reference is applied in an adaptive power MOSFET driver.
文摘On the basis of mutual compensation of mobility and threshold voltage temperature effects, a stable CMOS band-gap voltage reference circuit was designed and fabricated in CSMC-HJ 0.6 μm CMOS technology. Operating from 0 to 85 ℃ under a supply voltage ranging from 4.5 to 5.5 V, the voltage reference circuit offers an output reference voltage ranging from 1.122 to 1.176 V and a voltage variation less than ±3.70%. The chip size including bonding pads is only 0.4 mm×0.4 mm and the power dissipation falls inside the scope of 28.3 to 48.8 mW operating at a supply voltage of 4.5 to 5.5 V.
文摘A CMOS voltage reference, which is based on VGs and/x ΔGS in the weak inversion region, has been designed and implemented in standard 0.6μm CMOS technology. No diodes and parasitic bipolar junction transistors （BJTs） are used. The proposed voltage reference uses a current-mode topology by summing a PTAT current and a CTAT current into a re- sistor to generate the required reference voltage. It can also provide more than one reference voltage output, which is quite suitable for systems requiring many different reference voltages simultaneously. The occupied chip area is 0. 023mm^-2 . The operation supply voltage is from 2.5 to 6V, and the maximum supply current is 8.25μA. The designed three different out- puts are respectively about 203mV, 1.0V, and 2.05V at room temperature when the supply voltage is 4V. The circuit achieves a temperature coefficient of 31ppm/℃ in the temperature range of 0 to 100℃ and an average line regulation of ± 0. 203%/V. The voltage reference has been successfully applied in a white LED backlight driver chip.
文摘目的:探究不同镇痛模式应用于慢性非癌性疼痛患者的镇痛效果。方法:选择2021年8月—2022年9月于启东市人民医院接受治疗的120例慢性非癌性疼痛患者为研究对象,分为研究组(n=60,接受综合镇痛)与对照组(n=60,单纯接受药物镇痛),比较两组患者的治疗效果。结果:两组患者接受治疗后电痛阈及温度痛阈均较治疗前升高(均P<0.05),研究组患者电痛域及温度痛域均明显高于对照组(7.91±0.41 mA vs 7.21±0.39 mA,48.23±1.65℃vs 47.01±1.55℃,均P<0.05)。两组患者治疗后汉密尔顿焦虑量表(HAMA)和汉密尔顿抑郁量表(HAMD)评分均较治疗前降低(均P<0.05),研究组HAMA和HAMD均明显低于对照组(7.12±1.56分vs 9.89±2.08分,8.12±2.14分vs 10.23±2.98分,均P<0.05)。两组患者治疗后血清β-内啡肽(β-EP)、促肾上腺皮质激素(ACTH)及皮质醇(COR)水平较治疗前降低,研究组β-EP、ACTH及COR均明显低于对照组(均P<0.05)。研究组不良反应发生率低于对照组(10%vs 25%,P<0.05)。结论:采取综合镇痛措施治疗慢性非癌性疼痛患者,可提高电痛阈和温度痛阈,改善焦虑抑郁等不良情绪,降低炎症因子及不良反应发生率。
基金Supported by Science Foundations of Laboratory of Computational Physics and China Academy of Engineering Physics under Grant Nos.2009A0102005 and 2009B0101012National Science Foundation of China under Grant Nos.10702010,10775018,and 10604010
文摘Strong shock may induce complex processes in porous materials. We use the newly developed materialpoint-method to simulate such processes in an HMX-like material. To pick out relevant information, morphological characterization is used to treat with the temperature map. Via the Minkowski funetional analysis the dynamics and thermodynamics of the shock wave reaction on porous HMX-like material are studied. The geometrical and topological properties of the ＂hot-spots＂ are revealed. Numerical results indicate that, shocks in porous materials are not simple jump states as classically viewed, but rather are a complex sequence of compressions and rarefactions. They cover a broad spectrum of states. We can use coarse-grained description to the wave series. A threshold value of temperature presents a Turing pattern dynamical procedure. A higher porosity is generally preferred when the energetic material needs a higher temperature for initiation. The technique of data analysis can be used to other physical quantities, for example, density, particle velocity, some specific stress, etc. From a series of studies along the line, one may get a large quantity of information for desiring the fabrication of material and choosing shock strength according to what needed is scattered or connected ＂hot-spots＂. PACS numbers： 05.70.Ln, 05 Key words： porous material 70.-a, 05.40.-a, 62.50.Ef shock wave, Minkowski functionals
基金sponsored by the National Basic Research Program of China (973 Program, 2013CB430102)the Program of Scientific Innovation Research of College Graduate in Jiangsu Province (Grant Nos. CXZZ12-0490 and CXZZ11-0606)The National Center for Atmospheric Research is sponsored by the National Science Foundation
文摘The cloud-detection procedure developed by McNally and Watts(MW03) was added to the Weather Research and Forecasting Data Assimilation System. To provide some guidelines for setting up cloud-detection schemes, this study compares the MW03 scheme to the Multivariate and Minimum Residual(MMR) scheme for both simulated and real Advanced Infrared Sounder(AIRS) radiances. Results show that there is a high level of consistency between the results from simulated and real AIRS data. As expected, both cloud-detection schemes perform well in finding the cloud-contaminated channels based on the channels' peak levels. The clouddetection results from MW03 are sensitive to the prescribed brightness temperature innovation threshold and brightness temperature gradient threshold. When increasing the brightness temperature innovation threshold for MW03 to roughly eight times the default threshold, the two cloud-detection schemes produce consistent data rejection distributions overall for high channels. MMR generally retains more data for long-wave channels. For both cloud-detection schemes, there is a high level of consistency between the cloud-free pixels and the visible/near-IR(Vis/NIR) cloud mask.
基金Supported by the Special Research Fund Provided by the Chonnam National University
文摘The quantum teleportation with the entangled thermai state is investigated based on the completely anisotropie Heisenberg chain in the presence of the externally inhomogeneous magnetic field. The effects of the anisotropy and magnetic field for the quantum fidelity are studied in detail The zero temperature limit and the features of the nonzero temperature for this nonclassical fdelity are obtained. We find that the quantum teleportation demands more stringent conditions than the therma/ entanglement of the resource by investigating the threshold temperature of the thermal concurrence and the criticai temperature of the maximai teleportation fidelity. The useful quantum teleportation should avoid the point of the phase transition of the system and the anisotropy of the chain and the external magnetic field can control the applicability of the resource in the quantum teleportation.
