In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage fo...In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson＇s equation. Its characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs. Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length. The analytical models agree well with the two-dimensional device simulator MEDICI.展开更多
A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H i...A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.展开更多
文摘In order to suppress drain-induced barrier lowering in dual material gate SOI MOSFETs,halo doping is used in the channel near the source. Two-dimensional analytical models of surface potential and threshold voltage for the novel SOI MOSFET are developed based on the explicit solution of the two-dimensional Poisson＇s equation. Its characteristic improvement is investigated. It is concluded that the novel structure exhibits better suppression of drain-induced barrier lowering and higher carrier transport efficiency than conventional dual material gate SOI MOSFETs. Its drain-induced barrier lowering decreases with increasing halo doping concentration but does not change monotonically with halo length. The analytical models agree well with the two-dimensional device simulator MEDICI.
文摘A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.
